TY - GEN
T1 - 1-eV GaNAsSb for multijunction solar cells
AU - Maros, Aymeric
AU - Faleev, Nikolai
AU - Lee, Seung Hyun
AU - Kim, Jong Su
AU - Honsberg, Christiana
AU - King, Richard
N1 - Funding Information:
This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.
AB - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.
KW - Molecular beam epitaxy
KW - Photovoltaic cell
KW - Semiconductor epitaxial layer
KW - Solar cell
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U2 - 10.1109/PVSC.2017.8366527
DO - 10.1109/PVSC.2017.8366527
M3 - Conference contribution
AN - SCOPUS:85048487410
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 370
EP - 372
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -
