Abstract

We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • Molecular beam epitaxy
  • Photovoltaic cell
  • Semiconductor epitaxial layer
  • Solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of '1-eV GaNAsSb for multijunction solar cells'. Together they form a unique fingerprint.

  • Cite this

    Maros, A., Faleev, N., Lee, S. H., Kim, J. S., Honsberg, C., & King, R. (2018). 1-eV GaNAsSb for multijunction solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366527