1-eV GaNAsSb for multijunction solar cells

Aymeric Maros; Nikolai Faleev; Seung Hyun Lee; Jong Su Kim; Christiana Honsberg; Richard King

doi:10.1109/PVSC.2017.8366527

1-eV GaNAsSb for multijunction solar cells

Aymeric Maros, Nikolai Faleev, Seung Hyun Lee, Jong Su Kim, Christiana Honsberg, Richard King

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366527
State	Published - May 25 2018
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country	United States
City	Washington
Period	6/25/17 → 6/30/17

Keywords

Molecular beam epitaxy
Photovoltaic cell
Semiconductor epitaxial layer
Solar cell

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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Cite this

Maros, A., Faleev, N., Lee, S. H., Kim, J. S., Honsberg, C., & King, R. (2018). 1-eV GaNAsSb for multijunction solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366527

Maros, A, Faleev, N, Lee, SH, Kim, JS, Honsberg, C & King, R 2018, 1-eV GaNAsSb for multijunction solar cells. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366527

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abstract = "We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.",

keywords = "Molecular beam epitaxy, Photovoltaic cell, Semiconductor epitaxial layer, Solar cell",

author = "Aymeric Maros and Nikolai Faleev and Lee, {Seung Hyun} and Kim, {Jong Su} and Christiana Honsberg and Richard King",

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AU - Faleev, Nikolai

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AU - Honsberg, Christiana

AU - King, Richard

PY - 2018/5/25

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N2 - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.

AB - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.

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KW - Photovoltaic cell

KW - Semiconductor epitaxial layer

KW - Solar cell

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