Abstract
We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.
| Original language | English (US) |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-4 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| State | Published - May 25 2018 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
| Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country | United States |
| City | Washington |
| Period | 6/25/17 → 6/30/17 |
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Keywords
- Molecular beam epitaxy
- Photovoltaic cell
- Semiconductor epitaxial layer
- Solar cell
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
1-eV GaNAsSb for multijunction solar cells. / Maros, Aymeric; Faleev, Nikolai; Lee, Seung Hyun; Kim, Jong Su; Honsberg, Christiana; King, Richard.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 1-eV GaNAsSb for multijunction solar cells
AU - Maros, Aymeric
AU - Faleev, Nikolai
AU - Lee, Seung Hyun
AU - Kim, Jong Su
AU - Honsberg, Christiana
AU - King, Richard
PY - 2018/5/25
Y1 - 2018/5/25
N2 - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.
AB - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.
KW - Molecular beam epitaxy
KW - Photovoltaic cell
KW - Semiconductor epitaxial layer
KW - Solar cell
UR - http://www.scopus.com/inward/record.url?scp=85048487410&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048487410&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366527
DO - 10.1109/PVSC.2017.8366527
M3 - Conference contribution
AN - SCOPUS:85048487410
SP - 1
EP - 4
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -