TY - GEN
T1 - 1-eV GaNAsSb for multijunction solar cells
AU - Maros, Aymeric
AU - Faleev, Nikolai
AU - Lee, Seung Hyun
AU - Kim, Jong Su
AU - Honsberg, Christiana
AU - King, Richard
N1 - Funding Information:
This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895
PY - 2016/11/18
Y1 - 2016/11/18
N2 - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.
AB - We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.
KW - molecular beam epitaxy
KW - photovoltaic cell
KW - semiconductor epitaxial layer
KW - solar cell
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U2 - 10.1109/PVSC.2016.7750048
DO - 10.1109/PVSC.2016.7750048
M3 - Conference contribution
AN - SCOPUS:85003749435
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2306
EP - 2309
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -