3 Scopus citations

Abstract

We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2306-2309
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • molecular beam epitaxy
  • photovoltaic cell
  • semiconductor epitaxial layer
  • solar cell

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Maros, A., Faleev, N., Lee, S. H., Kim, J. S., Honsberg, C., & King, R. (2016). 1-eV GaNAsSb for multijunction solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2306-2309). [7750048] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750048