β-Ga2O3on Si (001) grown by plasma-assisted MBE with γ-Al2O3(111) buffer layer: Structural characterization

Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Alexander A. Demkov

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface. The β-Ga2O3 film was 66 nm thick, stoichiometric, and strongly textured, as determined by x-ray reflectivity, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy, with three basal growth planes (2 01), (101), and {310}, including one twin variant {31 0}. The observed basal growth planes correspond to the close-packing planes of the distorted face-centered cubic oxygen sublattice of β-Ga2O3. Local structural ordering can be thought to occur due to a continuation of the oxygen sublattice from the γ-alumina buffer layer into the β-gallia film. Each β-Ga2O3 growth plane further gives rise to 12 symmetry-derived rotational in-plane variants, resulting in a total of 48 domain variants. Atomistic models of possible gallia-alumina interfaces are presented.

Original languageEnglish (US)
Article number045209
JournalAIP Advances
Volume11
Issue number4
DOIs
StatePublished - Apr 1 2021

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'β-Ga<sub>2</sub>O<sub>3</sub>on Si (001) grown by plasma-assisted MBE with γ-Al<sub>2</sub>O<sub>3</sub>(111) buffer layer: Structural characterization'. Together they form a unique fingerprint.

Cite this