TY - JOUR
T1 - β-Ga2O3on Si (001) grown by plasma-assisted MBE with γ-Al2O3(111) buffer layer
T2 - Structural characterization
AU - Hadamek, Tobias
AU - Posadas, Agham B.
AU - Al-Quaiti, Fatima
AU - Smith, David J.
AU - McCartney, Martha R.
AU - Demkov, Alexander A.
N1 - Funding Information:
This work was supported by the Air Force Office of Scientific Research under Award No. FA9550-18-1-0053. This work made use of the Texas Materials Institute shared facilities. T.H. would like to thank S. Swinnea for maintaining the x-ray diffractometer and H. Celio for support with the photoelectron spectrometer calibration (supplementary material). D.J.S. and M.R.M. acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
Publisher Copyright:
© 2021 Author(s).
PY - 2021/4/1
Y1 - 2021/4/1
N2 - β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface. The β-Ga2O3 film was 66 nm thick, stoichiometric, and strongly textured, as determined by x-ray reflectivity, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy, with three basal growth planes (2 01), (101), and {310}, including one twin variant {31 0}. The observed basal growth planes correspond to the close-packing planes of the distorted face-centered cubic oxygen sublattice of β-Ga2O3. Local structural ordering can be thought to occur due to a continuation of the oxygen sublattice from the γ-alumina buffer layer into the β-gallia film. Each β-Ga2O3 growth plane further gives rise to 12 symmetry-derived rotational in-plane variants, resulting in a total of 48 domain variants. Atomistic models of possible gallia-alumina interfaces are presented.
AB - β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface. The β-Ga2O3 film was 66 nm thick, stoichiometric, and strongly textured, as determined by x-ray reflectivity, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy, with three basal growth planes (2 01), (101), and {310}, including one twin variant {31 0}. The observed basal growth planes correspond to the close-packing planes of the distorted face-centered cubic oxygen sublattice of β-Ga2O3. Local structural ordering can be thought to occur due to a continuation of the oxygen sublattice from the γ-alumina buffer layer into the β-gallia film. Each β-Ga2O3 growth plane further gives rise to 12 symmetry-derived rotational in-plane variants, resulting in a total of 48 domain variants. Atomistic models of possible gallia-alumina interfaces are presented.
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U2 - 10.1063/5.0044923
DO - 10.1063/5.0044923
M3 - Article
AN - SCOPUS:85103887271
SN - 2158-3226
VL - 11
JO - AIP Advances
JF - AIP Advances
IS - 4
M1 - 045209
ER -