The Effect of Silicon Quality on LDMOS Device Reverse Recovery (ASUF 30005875) The Effect of Silicon Quality on LDMOS Device Reverse Recovery The Effect of Silicon Quality on LDMOS Device Reverse Recovery Scope of Work The reverse recovery effect in diodes can become detrimental as huge charge densities get trapped in the silicon while switching . This can lead to unwanted long switching times. The presence of defects in epitaxial layers is thought to be the primary reason that facilitates the charge trapping and gives rise to long reverse recovery times. The extent to which this correlation is true needs to be more thoroughly investigated. New methodologies have to be developed for the characterization of defects in the epitaxial layers before better understanding of defects, their origin, and the appropriate ways of preventing them can be achieved. The desired technique must be capable of revealing the spatial distribution of defects and to distinguish between metallic impurities, structural defects, and mechanical stress. We propose to implement and use a measurement technique we have previously developed  to characterize the carrier lifetime (tg) as a mean to study defects and the reverse recovery. It also will be of interest to study the reverse recovery phenomenon from an application point of view, using the transmission line pulse (TLP) technique to correlate the defect study with the diodes behavior. will contribute the test samples for this study and ASU will devote one graduate student and Professor T. L. Alford to this project.  D. K. Schroder, Semiconductor materials and device characterization, 3rd ed., New York, NY, USA: Wiley, 2006.  A. E. Khorasani, T. L. Alford, D. K. Schroder, Modified pulsed MOS capacitor for characterization of ultraclean thin p/p+ epitaxial layers, IEEE Trans. Elec. Devices, vol. 60, pp. 2592-2597.
|Effective start/end date||1/1/14 → 12/31/17|
- INDUSTRY: Domestic Company: $60,000.00
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