Sandia National Laboratories Post-Silicon Reliability Project

Project: Research project

Project Details

Description

SiCMOSFETsshowagreatdealofpromiseforcommercialsuccess,butarefacingtwomajorproblems: (1)poormobilitywhichleadstolowdrivecurrent,and(2)poorthresholdvoltage(Vt)stability(especially athigh temperatures), which leads to unreliabledevice operation. Both problems stem fromthe SiC MOSoxide and interface. Low mobility is linked to high surface state densities (Dit) and poor high temperatureVtstability(alsoknownasbiastemperatureinstability,orBTI)islikelycausedbyelectron andholeinjectionintotheoxide.ThechieftaskofASUshallbetoelectricallycharacterizethephysical effectscausingtheseimpediments.Prof.Schroder(ASU)andonePhDstudentwillworkwithSandiato electricallycharacterizeSiCMOScapacitors(MOSC),andpossiblygatecontrolleddiodesandMOSFETs tostudy these phenomena. Interpretation of MOSC measurements involving capacitancetime (Ct), capacitancevoltage(CV), conductancevoltage (GV), and currentvoltage (IV) measurements are a particularstrengthofProf.SchroderthatwillbeusedtoprovideinsightintothephysicsoftheSiCMOS interfaceandoxide.Forexample,CV,GV,andCtmeasurementsmadeasafunctionofMOSCgate stressindicatechangesin interfaceandoxidepropertiessuchas densityof interface states (Dit), total oxidecharge(Not),andsurfacegenerationlifetime(s).SiCMOSsampleswillbeprovidedtoASUanda collaborativedeterminationofthemostrelevantmeasurementswillbedecidedforeachset.Resultsof thisworkshallbeusedalongwithSandiasresultstosuggestoxidationrelatedprocessimprovementsto universityandcommercialpartners.
StatusFinished
Effective start/end date10/1/1112/31/13

Funding

  • US Department of Energy (DOE): $100,000.00

Fingerprint Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.