Research Area 4: Electronics: Study of Defect Levels in InAsInAsSb type-II Superlattice Using Pressure-Dependent Photoluminescence

Physics & Astronomy

1. carrier lifetime 100%
2. photoluminescence 99%
3. defects 78%
4. minority carriers 74%
5. electronics 73%
6. photometers 62%
7. dark current 48%
8. life (durability) 32%
9. hydrostatic pressure 23%
10. nonuniformity 23%
11. wavelengths 22%
12. critical point 21%
13. quantum efficiency 20%
14. manufacturing 19%
15. energy levels 19%
16. engineering 17%
17. excitation 11%
18. performance 10%
19. lasers 10%
20. electrons 9%