Radiation Effects and Reliability Mechanisms for Advanced Semiconductor Device Technologies Radiation Effects and Reliability Mechanisms for Advanced Semiconductor Device Technologies This effort will combine the capabilities of (CFDRC) with the complementary expertise of researchers at Arizona State University (ASU). The technical approach for the effort will be based on CFDRCs NanoTCAD based semiconductor device simulation and radiation-effects modeling framework coupled with advanced Electron Microscopy based characterization techniques developed and refined by the ASU Team. While CFDRC currently has proven in-house TCAD-based device modeling, molecular dynamics simulation and machine learning capabilities, the ASU team has strong expertise and world-class facilities in electron microscopy-based techniques. The ASU team will also leverage in-house expertise on radiation effects in devices. The ASU team has device structures currently available (oxide-nitride dielectric stack device structures), which have been studied for radiation exposure and its effects on the electrical performance. Relevant devices from previous electrical performance-based radiation studies at ASU will also be leveraged for this work.
|Effective start/end date||12/16/19 → 3/11/20|
- DOD-USAF-AFRL: Air Force Office of Scientific Research (AFOSR): $15,700.00
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