Silicon wafers at the optimum thickness of 20-90 m are directly cut from an ingot of silicon using sub surface laser engraving (SSLE). Multiple layers of etch pits produce multiple wafers. The carrier lifetime is the same as the parent ingot.
|Effective start/end date||1/1/13 → 9/30/16|
- US Department of Energy (DOE): $599,544.00
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.