PVMI Bay Area Photovoltaic Consortium

Project: Research project

Description

Silicon wafers at the optimum thickness of 20-90 m are directly cut from an ingot of silicon using sub surface laser engraving (SSLE). Multiple layers of etch pits produce multiple wafers. The carrier lifetime is the same as the parent ingot.
StatusFinished
Effective start/end date1/1/139/30/16

Funding

  • US Department of Energy (DOE): $599,544.00

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ingots
engraving
wafers
silicon
carrier lifetime
lasers