Abstract: We here propose a novel approach to use two II-VI semiconductor layers on both sides of a silicon wafer to form a double-heterostructure (DH) to replace the top and bottom (TCO/doped a- Si:H/undoped a-Si:H) multilayer structures in a HIT solar cell. The II-VI layers can be made of ZnSe, ZnTe or ZnS. The key advantages of this new approach over the conventional and the HIT silicon solar cells include lower optical absorption and higher short-circuit current density, smaller series resistance and contact grid area, no expensive transparent conducting oxide, better interface, better current transport at the hetero-interface, much higher barriers for minority carriers, better light trapping and reduced reflection, potentially less manufacturing cost due to fewer layers, long-term stability and low growth temperature.
|Effective start/end date||1/1/13 → 6/30/16|
- US Department of Energy (DOE): $600,000.00
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