Nanowire Specialty Diodes for Integrated Applications Nanowire Specialty Diodes for Integrated Applications This research will explore specialty diodes and in particular, high density arrays of such diodes, made from vertical silicon and germanium nanowires grown with the vaporliquid- solid method, and how they might best be integrated into silicon IC manufacturing. It will study how the diode device structure and design interacts with and sometimes benefits from the unique nanowire characteristics, while also addressing important processing challenges (eg. growth, defects, surface states, and contact formation). The specialty diode family, which includes p-n, p-i-n, Schottky, Zener, metal-semiconductormetal and tunnel diodes, serves as both a good insertion point and technology driver for all nanowire technology, providing a commercial incentive for the research to develop robust, high yielding processes and devices. Arrays of such diodes have valuable applications ranging from select devices for crosspoint memories to optical sensing and energy scavenging. The approach is based on bottom-up fabrication of vertical Si, Ge, and Si/Ge heterostructure nanowires grown with in-situ doping using the vapor-liquid-solid process, with the vision of inserting this module into a MOS flow at the contact level after the conventional devices are in place. It combines the seed and growth capabilities developed at the Los Alamos National Laboratory Center for Integrated Nanotechnologies with the wafer processing and device modeling, design, and testing expertise at Arizona State University. The intellectual merits of this work lie in exploring the fundamentals of creating axial junctions in vertical nanowires and characterizing both physically and electrically the specialty diodes that can be made with those junctions. Such knowledge will help move these and related nanowire devices closer to manufacturing and commercial use. The research is a blend of materials science and electrical engineering with importance in both academia and industry. The broader impacts of this research lie in both its educational component and the potential value to the electronics industry as it strives to move beyond pure silicon CMOS. The opportunity for the student to work with researchers at the Los Alamos National Laboratory Center for Integrated Nanotechnologies is especially valuable. Since the research is aimed at enabling the early introduction of nanowire devices into mainstream CMOS technology, there is a potentially large impact on an industry which is important to our national competitiveness and to society in general. Further, the research will directly benefit members of society through the novel electronics products the technology enables." he REU: Nanowire Specialty Diodes for Integrated Applications
|Effective start/end date||9/15/10 → 8/31/14|
- National Science Foundation (NSF): $336,000.00
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