Modeling Heating Effects in Low-Power Multi-Gate SOI Devices and High-Power GaN HEMTs

Project: Research project

Project Details

Description

Modeling Heating Effects in Low-Power Multi-Gate SOI Devices and High-Power GaN HEMTs Modeling Heating Effects in Low-Power Multi-Gate SOI Devices and High-Power GaN HEMTs
StatusFinished
Effective start/end date8/15/099/30/12

Funding

  • National Science Foundation (NSF): $306,184.00

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