Modeling and Simulation of Terahertz Transistor Electronics Modeling and Simulation of Terahertz Transistor Electronics Under a subcontract from NGC, the ASU team will provide modeling and simulation of terahertz transistor electronics. This task will evolve through Phases I III as the NGC device technology improves over each phase. Buyer will develop and demonstrate to DARPA THz Electronics capabilities. This overall program effort involves the development of semiconductor, packaging, and metrology capabilities at frequencies specified by DARPA. Buyer will take the lead, as the prime THz Electronics contractor, on all tasks. Buyer requests the Seller to perform the following tasks as part of the Phase I program
|Effective start/end date||8/1/09 → 9/28/12|
- DOD: Defense Advanced Research Projects Agency (DARPA): $598,114.00
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