Increased Lifetime Beyond Radiative Limit Using Carrier Separation In Direct Bandgap Semiconductors For IR Detector Applications

Project: Research project

Project Details

Description

Increased Lifetime Beyond Radiative Limit Using Carrier Separation In Direct Bandgap Semiconductors For IR Detector Applications Research area 4.3: Increased lifetime beyond radiative limit using carrier separation in direct bandgap semiconductors for IR detector applications
StatusFinished
Effective start/end date10/22/1210/21/13

Funding

  • DOD-ARMY-ARL: Army Research Office (ARO): $45,000.00

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