High Speed GaN HEMT Monte Carlo Simulations High Speed GaN HEMT Monte Carlo Simulations TASK # 1 MONTE CARLO SIMULATION OF ALGAN/GAN HEMT STRUCTURES PROVIDED BY NGST: simulate ID-VD, ID-VG, peak fT, and peak fMAX performance. Simulate or provide best estimate of off-state reverse breakdown voltage and on-state breakdown voltage. Provide plots of electron velocity as a function of position, distribution of sheet charge in the channel, and electric field profile in the channel and at the surface of the AlGaN barrier. Provide simulated I-V and S-parameter data. TASK # 2 - MONTE CARLO SIMULATION OF FT,FMAX,BREAKDOWN PERFORMANCE SCALING Simulate quantities in Task #1 as a function of gate length, barrier thickness, and contact resistance. Discrete values of gate length, barrier thickness, and contact resistance provided by NGST
|Effective start/end date||12/29/08 → 5/29/09|
- INDUSTRY: Domestic Company: $10,850.00
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