Graphene Detector Design Modeling and Fabrication Growth of Epitaxial Layers on Wafers Using Bismuth Strained layer InAs/InAsSbBi superlattices using Bi as a constituent and a surfactant Graphene Detector Design, Modeling, and Fabrication: Growth of epitaxial layers on wafers using bismuth
|Effective start/end date||5/20/16 → 9/30/17|
- Sandia National Laboratories (SNL): $125,000.00
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