Graphene Detector Design Modeling and Fabrication Growth of Epitaxial Layers on Wafers Using Bismuth

Project: Research project

Project Details

Description

Graphene Detector Design Modeling and Fabrication Growth of Epitaxial Layers on Wafers Using Bismuth Strained layer InAs/InAsSbBi superlattices using Bi as a constituent and a surfactant Graphene Detector Design, Modeling, and Fabrication: Growth of epitaxial layers on wafers using bismuth
StatusFinished
Effective start/end date5/20/169/30/17

Funding

  • Sandia National Laboratories (SNL): $125,000.00

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