Project Details
Description
GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices EFFECTS OF DEFECTS AND DEGRADATION MECHANISMS IN SIC AND GAN DEVICES REU Supplement to ECS 0324350 (GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices) GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices
Status | Finished |
---|---|
Effective start/end date | 9/1/03 → 8/31/06 |
Funding
- National Science Foundation (NSF): $342,000.00
Fingerprint
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.