GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices

Project: Research project

Project Details

Description

GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices EFFECTS OF DEFECTS AND DEGRADATION MECHANISMS IN SIC AND GAN DEVICES REU Supplement to ECS 0324350 (GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices) GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices
StatusFinished
Effective start/end date9/1/038/31/06

Funding

  • National Science Foundation (NSF): $342,000.00

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