The primary objective of this project is to develop greater predictive knowledge and understanding of nitride HEMT devices and lifetimes. This goal will be accomplished by providing detailed information and insights about failure mechanisms, structural degradation and device lifetimes using advanced electron microscopy techniques. The specific tasks will include careful examination and comparisons of sets of stressed and failed devices and establishing correlations with any morphological and chemical changes that have developed as a result of device operation. Systematic sets of state-of-the-art and stressed HEMT devices provided by commercial suppliers and university research groups will be examined, with the primary purpose of determining the effects and possible mechanism(s) of device failure. Detailed electron holography examination of specially prepared samples will also be carried out to provide additional knowledge about the effects of very strong electrostatic fields implicated in device degradation. Sample preparation methods for electron holography will likely need further refinement, depending on feedback from on in situ biasing of devices during observation.
|Effective start/end date||9/8/11 → 9/21/13|
- DOD-USAF-AFRL: Air Force Office of Scientific Research (AFOSR): $227,580.00
high electron mobility transistors