Electrically Injected Si-Ge-Sn Lasers

Project: Research project

Description

The objective of this program is to develop electrically injected lasers based on Sn-containing group-IV alloys. The devices will be fabricated on Si(100) by taking advantage of recent synthetic breakthroughs at ASU that made it possible to grow high-quality GeSn and GeSiSn alloys with direct band gaps, to achieve ultra-high doping by in situ methods, and to demonstrate working light emitting diodes that represent the basic building blocks of laser structures to be investigated within the program.
Two distinct types of laser families will be pursued. The first is based on standard pin diode designs in which the intrinsic layer is a direct gap Ge1-ySny alloy with y>0.09. These lasers are expected to emit at wavelengths of 2.4m and longer. The second type of laser relies on the unique band structure properties of Ge1-ySny, in which for y>0.09 quasi-directness can be achieved by n-type doping. Such lasers will operate at shorter wavelengths 2.0-2.4m. To reach even shorter wavelengths down to 1.55m, a thorough study is proposed of the compositional dependence of the direct/indirect band gaps in GeSiSn, as well as their band offsets relative to GeSn. Accurate knowledge of these electronic parameters will enable advanced GeSn/GeSiSn multi-quantum-well designs that exploit quantum confinement and strain compensation to shift the emission wavelength, while taking advantage of the lower effective dimensionality to reduce non-radiative losses. Designs based on active GeSiSn components could be used to further adjust the emission in the telecom range.
The proposed development will dramatically impact the field of Si Photonics enabling, rapid development of a range of novel optical devices that take advantage of GeSn electrically injected lasers. Combining optical functionalities with silicon technology could also fundamentally advance biological and chemical sensing capabilities. These are all applications of interest to DoD technical areas as well as the commercial sector.
StatusActive
Effective start/end date8/15/178/14/20

Funding

  • DOD-USAF-AFRL: Air Force Office of Scientific Research (AFOSR): $375,000.00

Fingerprint

lasers
wavelengths
light emitting diodes
sectors
diodes
quantum wells
photonics
shift
silicon
electronics