Effective Selective Area Doping for GAN Vertical Power Transistors Enabled by Innovative Material Engineering

Project: Research project

Project Details

Description

Effective Selective Area Doping for GAN Vertical Power Transistors Enabled by Innovative Material Engineering Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering
StatusFinished
Effective start/end date9/18/176/17/21

Funding

  • DOE: Advanced Research Projects Agency-Energy (ARPA-E): $2,849,989.00

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