Semiconductor optoelectronic materials and devices have experienced very rapid development for more than half a century. However, there still remains a lack of closely lattice-matched materials and substrates suitable for the grand integration of various kinds of semiconductor optoelectronic devices on a single chip. We have recently proposed a new materials platform: the 6.1 II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to GaSb and InAs substrates. These materials have direct bandgaps covering a very broad energy spectrum from far IR (~0 eV) to UV (~3.4eV). This feature is not achievable by any other known lattice-matched semiconductors on any available substrates. Such a unique materials platform enables invention of new light emitting devices, multijunction solar cells, multicolor photodetectors and FPAs, and facilitates monolithic integration without misfit dislocations to ensure the best materials quality. Despite the great potential for these materials, few MBE machines that exist in the world are equipped to grow both 6.1 II-VI and III-V semiconductors. We propose to convert an existing dual-chamber III-V MBE machine into a II-VI and III-V multi-chamber system with unique features and state-of-the-art valved effusion cells to offer an unprecedented degree of precise control of the growth of novel semiconductor materials and devices. This system will support several ongoing research programs funded by AFOSR, AFRL, etc. with a total funding of $6 million. It will also be the key tool for five pending proposals with an additional $6 million of requested funding from various DOD funding agencies. This machine will also be used to train and support dozens of PhD students and postdocs over the next 10-15 years and to strengthen the established close collaboration with two AFRL laboratories and ARL in studying the proposed materials properties and IR photodetectors.
|Effective start/end date||8/1/10 → 7/31/11|
- DOD-USAF-AFRL: Air Force Office of Scientific Research (AFOSR): $200,123.00