Diamond Electronics on CVD Diamond Substrates Diamond Electronics on CVD Diamond Substrates 1. CVD growth characteristics on CVD Diamond substrates: this task will prepare undoped CVD diamond films on IIa Technologies substrates. The task will compare the growth on substrates that have a range of optical absorption values and have different surface polishing. The grown film thickness will be determined by SIMS, the average crystal quality will be measured with XRD and the spatial variations will be examined with AFM and x-ray topography. Diamond growth on p-type, B-doped substrates may eventually be the preferred configuration for power devices. The growth of undoped intrinsic layers will be explored on B-doped CVD diamond substrates to determine the quality and defect structures of the films. This research could be relevant to the development of p-type CVD Diamond substrates. 2. CVD growth of P-doped diamond on off-axis substrates: this task will prepare CVD diamond films on (111) substrates and on (100) substrates with off-axis surfaces of 0, 2.5, 5, 7.5 and 10 degrees towards <011> and towards <001>. The initial growth on (111) substrates will involve a four layer sequence: undoped layer, 1E17 P-doped layer, 1E18 P-incorporation layer, and 1E19 P-incorporation layer. Growth times will be ~2 hrs per layer. Prior to growth the surfaces will be acid cleaned. After loading into the growth chamber a H-plasma step will be employed to remove surface contaminants and surface defects. The surfaces will be characterized with optical microscopy and atomic force microscopy. After growth the surfaces will be characterized with optical microscopy, x-ray topography (XRT), AFM and SIMS (P, H, O, N). The same growth sequence will be applied to the (100) off-axis substrates. The SIMS results will be employed to determine the growth rate and the P incorporation efficiency (relative to growth on (111)). The AFM, optical microscopy and XRT will establish the relation of surface morphology to substrate orientation and substrate defects. 3. Effect of surface polishing and morphology on CVD growth of P-doped diamond: The hypothesis of this study is that (100) off-axis surfaces with enhanced step structures will show enhanced P-incorporation. The initial focus will establish the effectiveness of the surface process (acid etch and H-plasma clean) at removing surface damage and at establishing a repeatable and well defined terrace and step structure. The process will be optimized such that the terrace and step structure is enhanced on several off-axis surfaces. Several surfaces will be prepared with the same off-axis alignment but with different terracestep configurations, and these surface will have the four layer growth sequence noted above. The films will be characterized with optical microscopy, x-ray topography, AFM and SIMS (P, H, O, N,). Again the incorporation efficiency will be determined.
|Effective start/end date||9/1/16 → 2/28/18|
- INDUSTRY: Domestic Company: $60,000.00
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