Development of Radiation-Tolerant High-Voltage, High-Power Electronics WBG Drain Engineered Transistor

Project: Research project

Project Details

Description

Development of Radiation-Tolerant High-Voltage, High-Power Electronics WBG Drain Engineered Transistor Development of Radiation-Tolerant High-Voltage, High-Power Electronics WBG Drain Engineered Transistor
StatusFinished
Effective start/end date7/26/2111/19/21

Funding

  • NASA: Goddard Space Flight Center: $40,000.00

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