Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys Scope of Work: Title of Proposal: Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide- Bandgap Semiconductor Alloys Lead Organization: Georgia Tech, Prof. Russell Dupuis Ponces team at ASU is expert in the study of heterointerfaces and their impact on the thin film properties. Also of interest is the compositional stability of these thin films and the correlation with nucleation and growth mechanisms. Ponce will be primarily responsible for advanced structural and microscopic materials characterization and analysis using transmission electron microscopy (TEM), highangle annular dark-field (HAADF), scanning transmission electron microscopy (STEM), cathodoluminescence (CL) imaging and time-resolved CL spectroscopy, Rutherford back-scattering (RBS), and e-beam holographic measurements of the internal electric fields in these strained heterostructures.
|Effective start/end date||7/1/14 → 6/30/17|
- NSF-MPS-DMR: Division of Materials Development, Research Informal Settings (MDRISE): $210,000.00
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