Characterization of III-Nitride Devices Characterization of III-Nitride Devices Characterization of III-Nitride Devices - Amendment 1) To explore the use of advanced electron microscopy characterization techniques, especially electron holography and nanoscale elemental mapping, for identification of possible failure modes in III-nitride HEMT devices. 2) To support and integrate the experimental characterization with physics-based modeling of charge transport within HEMT devices, in order to identify the failure mechanisms on a microscopic scale and thereby improve performance and reliability.
|Effective start/end date||5/30/08 → 5/30/10|
- DOD: Air Force (USAF): $565,158.00
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