Characterization of III-Nitride Devices

1) To explore the use of advanced electron microscopy characterization techniques, especially electron holography and nanoscale elemental mapping, for identification of possible failure modes in III-nitride HEMT devices. 2) To support and integrate the experimental characterization with physics-based modeling of charge transport within HEMT devices, in order to identify the failure mechanisms on a microscopic scale and thereby improve performance and reliability.