Characterization of III-Nitride Devices

Project: Research project

Project Details

Description

1) To explore the use of advanced electron microscopy characterization techniques, especially electron holography and nanoscale elemental mapping, for identification of possible failure modes in III-nitride HEMT devices. 2) To support and integrate the experimental characterization with physics-based modeling of charge transport within HEMT devices, in order to identify the failure mechanisms on a microscopic scale and thereby improve performance and reliability.
StatusFinished
Effective start/end date5/30/085/30/10

Funding

  • DOD: Air Force (USAF): $565,158.00

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