Characterization of defect energy levels due to As, Co, and Ni impurities in pyrite: A step toward understanding charge transfer kinetics at the semic

Characterization of defect energy levels due to As, Co, and Ni impurities in pyrite: A step toward understanding charge transfer kinetics at the semic Characterization of defect energy levels due to As, Co, and Ni impurities in pyrite: A step toward understanding charge transfer kinetics at the semic We will use FTIR to measure energy levels within the pyrite band gap of states associated with dopants and other point defects in synthetic-doped and undoped pyrite. Defect levels and their influence on carrier mobility will also be investigated with solid-state impedance spectroscopy, deep-level transient spectroscopy (DLTS), and by measuring the Hall effect as a function of temperature. By clarifying the electronic effect of defect levels within bulk pyrite, these experiments will help refine the charge transfer mechanisms proposed on the basis of EIS equivalent circuit modeling and possibly lead to new testable hypotheses. Our group is known for expertise in transmission electron microscopy (TEM) and if preliminary results warrant, we can look for evidence of secondary phases and impurity clumping on the atomic scale.