Advanced Nanostructural Techniques for Nitride Device Operation

Project: Research project

Description

Proposal Title: Advanced Nanostructural Techniques for Nitride Device Operation Principal Investigators: David J. Smith (PI), and Martha R. McCartney Scope of Project: To participate in the development and improvement of devices to identify and understand complex physical and chemical interactions. Stress test and characterization results will be interpreted to provide higher fidelity lifetime estimates. Overview: This program of work will employ advanced electron microscopy characterization techniques, especially electron holography, aberration-corrected imaging and spectral mapping, to identify and elucidate possible failure modes in semiconductor devices and component materials. As-grown and processed materials, as well as novel devices, should be characterized, taking advantage of the enhanced structural resolution and chemical sensitivity of our current and newly installed instruments. Careful comparisons with device modeling will enable the physical and chemical effects of stress-testing to be better understood, thus enabling more reliable prediction of device lifetimes.
StatusFinished
Effective start/end date9/24/136/6/16

Funding

  • DOD-USAF: Air Force Research Labs (AFRL): $643,094.00

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nitrides
life (durability)
chemical effects
failure modes
semiconductor devices
holography
proposals
aberration
electron microscopy
estimates
predictions
electrons
interactions