Advanced III-N UV Diode Lasers Operating at 369mm with Narrow Line Width Emission ADVANCED III-N UV DIODE LASERS OPERATING AT 369NM WITH NARROW-LINE-WIDTH EMISSION Scope of work Fernando Ponce (ASU): Title of Proposal: ADVANCED III-N UV DIODE LASERS OPERATING AT 369NM WITH NARROW-LINE-WIDTH EMISSION Lead Organization: Georgia Institute of Technology (Prof. Russell D. Dupuis) Objective: Development of III-N laser diodes operating at 369 nm with narrow line emission. Research at ASU will focus on Task 4 (Advanced microstructural material characterization), which involves detail studies of the microstructure (TEM, XRD), the electronic properties (Electron holography in the TEM) and the optical properties (spatially-resolved cathodoluminescence imaging and time-resolved luminescence spectroscopy); all of these carried out at the nanometer scale. A correlation between these properties will lead us to formulate the physics behind crystal growth parameters and device performance. The approach for Task 4 is to use the advanced materials characterization facilities of ASU to characterize and analyze the III-N materials and MQW heterostructures and devices grown in Task 1. In Phase 1, we will focus on exploring the basic materials and optical properties of AlInGaN and BAlN materials and heterostructures, particularly, the MQW active region, waveguide, and cladding layers. We will also evaluate damage due to ICP etching of DBR mirrors. In Phase 2, the AlInGaN LD structures will be characterized and the results used to optimize the LD devices. In Phase 3, device structures will be characterized before and after device operation to evaluate the reliability of these LDs.
|Effective start/end date||1/13/15 → 11/30/16|
- DOD: Defense Advanced Research Projects Agency (DARPA): $148,657.00
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.