• 1926 Citations
  • 22 h-Index
20102020

Research output per year

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Fingerprint Dive into the research topics where Yuji Zhao is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Research Output

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Huang, X., Li, D., Su, P. Y., Fu, H., Chen, H., Yang, C., Zhou, J., Qi, X., Yang, T. H., Montes, J., Deng, X., Fu, K., DenBaars, S. P., Nakamura, S., Ponce, F. A., Ning, C. Z. & Zhao, Y., Oct 2020, In : Nano Energy. 76, 105013.

Research output: Contribution to journalArticle

  • Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

    Caria, A., De Santi, C., Zamperetti, F., Huang, X., Fu, H., Chen, H., Zhao, Y., Meneghesso, G., Zanoni, E. & Meneghini, M., 2020, Gallium Nitride Materials and Devices XV. Fujioka, H., Morkoc, H. & Schwarz, U. T. (eds.). SPIE, 112800E. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11280).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 1 Scopus citations

    High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

    Fu, H., Montes, J., Deng, X., Qi, X., Goodnick, S. M., Ponce, F. A., Zhao, Y., Fu, K., Alugubelli, S. R., Cheng, C. Y., Huang, X., Chen, H., Yang, T. H., Yang, C. & Zhou, J., Jan 2020, In : IEEE Electron Device Letters. 41, 1, p. 127-130 4 p., 8906086.

    Research output: Contribution to journalArticle

  • Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

    Fu, K., Zhou, J., Deng, X., Qi, X., Smith, D. J., Goodnick, S. M., Zhao, Y., Fu, H., Huang, X., Yang, T. H., Cheng, C. Y., Peri, P. R., Chen, H., Montes, J. & Yang, C., Jan 1 2020, In : IEEE Journal of the Electron Devices Society. 8, p. 74-83 10 p., 8949530.

    Research output: Contribution to journalArticle

    Open Access
  • Demonstration of 1.27 kV Etch-Then-Regrow GaN p-n Junctions with Low Leakage for GaN Power Electronics

    Fu, K., Fu, H., Huang, X., Chen, H., Yang, T. H., Montes, J., Yang, C., Zhou, J. & Zhao, Y., Nov 2019, In : IEEE Electron Device Letters. 40, 11, p. 1728-1731 4 p., 8839852.

    Research output: Contribution to journalArticle

  • 2 Scopus citations

    Projects