If you made any changes in Pure, your changes will be visible here soon.

Research Output 1978 2019

Filter
Article
2019

Analysis of recombination processes in polytype gallium arsenide nanowires

Vulic, N. & Goodnick, S., Feb 1 2019, In : Nano Energy. 56, p. 196-206 11 p.

Research output: Contribution to journalArticle

Gallium arsenide
Nanowires
Photoluminescence
Energy gap
Defects

Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si

Vatan Meidanshahi, R., Bowden, S. & Goodnick, S., Jan 1 2019, In : Physical Chemistry Chemical Physics. 21, 24, p. 13257-13266 10 p.

Research output: Contribution to journalArticle

Electronic structure
electronic structure
atoms
Dangling bonds
orbitals

Electronic structure of GaP/Si(001) heterojunctions and the role of hydrogen passivation

Meidanshahi, R. V., Zhang, C., Zou, Y., Honsberg, C. & Goodnick, S., Aug 1 2019, In : Progress in Photovoltaics: Research and Applications. 27, 8, p. 724-732 9 p.

Research output: Contribution to journalArticle

Passivation
passivity
Electronic structure
Heterojunctions
heterojunctions
Kinetic Monte Carlo
Amorphous Silicon
Passivation
Heterojunction
Silicon

Neutralizing the polarization effect of diamond diode detectors using periodic forward bias pulses

Holmes, J. M., Dutta, M., Koeck, F. A., Benipal, M. K., Hathwar, R., Brown, J., Fox, B., Johnson, H., Zaniewski, A., Alarcon, R., Chowdhury, S., Goodnick, S. & Nemanich, R., Apr 1 2019, In : Diamond and Related Materials. 94, p. 162-165 4 p.

Research output: Contribution to journalArticle

Diamond
Diamonds
Diodes
Polarization
Detectors
2018
8 Citations (Scopus)

A 4.5 μm PIN diamond diode for detecting slow neutrons

Holmes, J., Dutta, M., Koeck, F. A., Benipal, M., Brown, J., Fox, B., Hathwar, R., Johnson, H., Malakoutian, M., Saremi, M., Zaniewski, A., Alarcon, R., Chowdhury, S., Goodnick, S. & Nemanich, R., Sep 21 2018, In : Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 903, p. 297-301 5 p.

Research output: Contribution to journalArticle

thermal neutrons
Diamonds
Neutrons
Diodes
diamonds
1 Citation (Scopus)

Determination of Minority Carrier Lifetime of Holes in Diamond PIN Diodes Using Reverse Recovery Method

Dutta, M., Mandal, S., Hathwar, R., Fischer, A. M., Koeck, F. A. M., Nemanich, R., Goodnick, S. & Chowdhury, S., Feb 9 2018, (Accepted/In press) In : IEEE Electron Device Letters.

Research output: Contribution to journalArticle

Diamond
Carrier lifetime
Diamonds
Time delay
Diodes
2017
13 Citations (Scopus)

Analysis of the reverse I-V characteristics of diamond-based PIN diodes

Saremi, M., Hathwar, R., Dutta, M., Koeck, F. A. M., Nemanich, R., Chowdhury, S. & Goodnick, S., Jul 24 2017, In : Applied Physics Letters. 111, 4, 043507.

Research output: Contribution to journalArticle

diamonds
diodes
defects
thermal conductivity
breakdown
5 Citations (Scopus)

Effective mobility for sequential carrier transport in multiple quantum well structures

Toprasertpong, K., Goodnick, S., Nakano, Y. & Sugiyama, M., Aug 29 2017, In : Physical Review B. 96, 7, 075441.

Research output: Contribution to journalArticle

quantum wells
thermionic emission
hole mobility
carrier mobility
electron mobility
5 Citations (Scopus)

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., Ponce, F., Arena, C., Honsberg, C. & Goodnick, S., Nov 1 2017, In : IEEE Journal of Photovoltaics. 7, 6, p. 1646-1652 7 p., 8068948.

Research output: Contribution to journalArticle

High temperature applications
refractories
Refractory materials
Solar cells
solar cells
1 Citation (Scopus)
Scattering
Semiconductor materials
Phonons
scattering
phonons

Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air

Zhao, S., Gao, J., Wang, S., Xie, H., Ponce, F., Goodnick, S. & Chowdhury, S., Dec 1 2017, In : Japanese Journal of Applied Physics. 56, 12, 126502.

Research output: Contribution to journalArticle

Ohmic contacts
electric contacts
air
Air
thermal stresses
2016
9 Citations (Scopus)

Demonstration of Diamond-Based Schottky p-i-n Diode with Blocking Voltage > 500 v

Dutta, M., Koeck, F. A. M., Hathwar, R., Goodnick, S., Nemanich, R. & Chowdhury, S., Sep 1 2016, In : IEEE Electron Device Letters. 37, 9, p. 1170-1173 4 p., 7515223.

Research output: Contribution to journalArticle

Diamond
Diamonds
Diodes
Demonstrations
Electric potential

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Hathwar, R., Saraniti, M. & Goodnick, S., Jul 28 2016, In : Journal of Applied Physics. 120, 4, 044307.

Research output: Contribution to journalArticle

nanowires
simulation
Runge-Kutta method
Brillouin zones
electric fields
5 Citations (Scopus)

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Hathwar, R., Dutta, M., Koeck, F. A. M., Nemanich, R., Chowdhury, S. & Goodnick, S., Jun 14 2016, In : Journal of Applied Physics. 119, 22, 225703.

Research output: Contribution to journalArticle

Schottky diodes
diamonds
simulation
temperature
carrier mobility
2015
3 Citations (Scopus)
heterojunctions
solar cells
amorphous silicon
defects
kinetics
3 Citations (Scopus)

Energy Relaxation and Non-linear Transport in InAs Nanowires

Hathwar, R., Saraniti, M. & Goodnick, S., Oct 13 2015, In : Journal of Physics: Conference Series. 647, 1, 012029.

Research output: Contribution to journalArticle

nanowires
relaxation time
scattering
energy
electron energy

IMS2015 Opening and Closing Plenary Sessions

Goodnick, S., Apr 1 2015, In : IEEE Microwave Magazine. 16, 3, 7054671.

Research output: Contribution to journalArticle

Plant shutdowns
closing
Electric power systems
Radio receivers
Microwaves
6 Citations (Scopus)

Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

Zhao, S., McFavilen, H., Wang, S., Ponce, F., Arena, C., Goodnick, S. & Chowdhury, S., Dec 29 2015, (Accepted/In press) In : Journal of Electronic Materials. p. 1-5 5 p.

Research output: Contribution to journalArticle

Ohmic contacts
electric contacts
temperature dependence
air
Air
1 Citation (Scopus)

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Chandra, N., Tracy, C. J., Cho, J. H., Picraux, S. T., Hathwar, R. & Goodnick, S., 2015, In : Journal of Applied Physics. 118, 2, 024301.

Research output: Contribution to journalArticle

Schottky diodes
nanowires
thermionic emission
shunts
peroxides
2013

Current degradation due to electromechanical coupling in GaN HEMT's

Padmanabhan, B., Vasileska, D. & Goodnick, S., Jul 2013, In : Microelectronics Journal. 44, 7, p. 592-597 6 p.

Research output: Contribution to journalArticle

Electromechanical coupling
High electron mobility transistors
high electron mobility transistors
Polarization
degradation

Inducing a junction in n-type InxGa(1-x)N

Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Fischer, A. M., Goodnick, S., Faleev, N. N., Ghosh, K. & Honsberg, C., 2013, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31, 3, 03C127.

Research output: Contribution to journalArticle

Gallium
Indium
Piezoelectricity
Binary alloys
Film growth
18 Citations (Scopus)

Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells

Zhou, L., Dimakis, E., Hathwar, R., Aoki, T., Smith, D., Moustakas, T. D., Goodnick, S. & McCartney, M., Sep 25 2013, In : Physical Review B - Condensed Matter and Materials Physics. 88, 12, 125310.

Research output: Contribution to journalArticle

barrier layers
Semiconductor quantum wells
Monolayers
quantum wells
Polarization
2 Citations (Scopus)

Reliability concerns due to self-heating effects in GaN HEMTs

Padmanabhan, B., Vasileska, D. & Goodnick, S., Sep 2013, In : Journal of Integrated Circuits and Systems. 8, 2, p. 78-82 5 p.

Research output: Contribution to journalArticle

Electrostatic devices
High electron mobility transistors
Heating

Tool-based curricula and visual learning

Vasileska, D., Klimeck, G., Magana, A. & Goodnick, S., Dec 2013, In : Electronics. 17, 2, p. 95-104 10 p.

Research output: Contribution to journalArticle

Curricula
Students
Nanotechnology
Quantum theory
Nanoelectronics
2012
12 Citations (Scopus)

Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors

Vasileska, D., Raleva, K., Hossain, A. & Goodnick, S., Sep 2012, In : Journal of Computational Electronics. 11, 3, p. 238-248 11 p.

Research output: Contribution to journalArticle

Silicon on insulator technology
Silicon-on-insulator
Nanowires
Heating
Transistors
10 Citations (Scopus)

Is self-heating responsible for the current collapse in GaN HEMTs?

Padmanabhan, B., Vasileska, D. & Goodnick, S., Mar 2012, In : Journal of Computational Electronics. 11, 1, p. 129-136 8 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Heating
Electron temperature
Electron
2 Citations (Scopus)

Modeling and simulation of terahertz devices

Goodnick, S. & Saraniti, M., 2012, In : IEEE Microwave Magazine. 13, 7, p. 36-44 9 p., 6355782.

Research output: Contribution to journalArticle

Terahertz spectroscopy
Submillimeter waves
submillimeter waves
solid state
simulation
8 Citations (Scopus)

Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

Raleva, K., Vasileska, D., Hossain, A., Yoo, S. K. & Goodnick, S., Mar 2012, In : Journal of Computational Electronics. 11, 1, p. 106-117 12 p.

Research output: Contribution to journalArticle

Silicon-on-insulator
MOSFET
Silicon
simulators
Heating
2011
10 Citations (Scopus)

Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs

Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. & Marino, F. A., Nov 2011, In : IEEE Transactions on Electron Devices. 58, 11, p. 3876-3884 9 p., 6024451.

Research output: Contribution to journalArticle

Wave power
Millimeter waves
Passivation
Permittivity
Theophylline

Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

Guerra, D., Marino, F. ALESSIO., Goodnick, S., Ferry, D. & Saraniti, M., Sep 2011, In : International Journal of High Speed Electronics and Systems. 20, 3, p. 423-430 8 p.

Research output: Contribution to journalArticle

Capacitance
Simulators
Signal analysis
Monte Carlo simulation
Power HEMT
8 Citations (Scopus)

Guest editorial

Pierantoni, L., Coccetti, F., Lugli, P. & Goodnick, S., 2011, In : IEEE Transactions on Microwave Theory and Techniques. 59, 10 PART 2, p. 2566-2567 2 p., 6026929.

Research output: Contribution to journalArticle

2010

2010 Si nanoelectronics workshop

Goodnick, S., 2010, In : Unknown Journal. 5562540.

Research output: Contribution to journalArticle

Nanoelectronics
30 Citations (Scopus)

Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs

Guerra, D., Akis, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., Nov 2010, In : IEEE Electron Device Letters. 31, 11, p. 1217-1219 3 p., 5585697.

Research output: Contribution to journalArticle

High electron mobility transistors
Aspect ratio
Band structure
Permittivity
Simulators
12 Citations (Scopus)

Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations

Guerra, D., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Marino, F. A., Dec 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3348-3354 7 p., 5595023.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Electron gas
Cutoff frequency
Band structure
8 Citations (Scopus)

Editorial: Semiconductor nanotechnology: Novel materials and devices for electronics, photonics and renewable energy applications

Goodnick, S., Korkin, A., Krstic, P., Mascher, P., Preston, J. & Zaslavsky, A., 2010, In : Nanotechnology. 21, 13, 130201.

Research output: Contribution to journalArticle

Nanotechnology
Photonics
Electronic equipment
Semiconductor materials
60 Citations (Scopus)

Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

Marino, F. A., Faralli, N., Palacios, T., Ferry, D. K., Goodnick, S. & Saraniti, M., Jan 2010, In : IEEE Transactions on Electron Devices. 57, 1, p. 353-360 8 p., 5339189.

Research output: Contribution to journalArticle

High electron mobility transistors
Transistors
Simulators
Edge dislocations
Band structure
16 Citations (Scopus)

Electrothermal monte carlo simulation of GaN HEMTs including electronelectron interactions

Ashok, A., Vasileska, D., Hartin, O. L. & Goodnick, S., Mar 2010, In : IEEE Transactions on Electron Devices. 57, 3, p. 562-570 9 p., 5395682.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Phonons
Energy balance
Thermal effects
23 Citations (Scopus)
Silicon
Thermal conductivity
Simulators
Temperature
Scattering
7 Citations (Scopus)

Emerging N-face GaN HEMT technology: A cellular Monte Carlo study

Marino, F. A., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Guerra, D., Oct 2010, In : IEEE Transactions on Electron Devices. 57, 10, p. 2579-2586 8 p., 5549880.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Millimeter waves
Band structure
Microwaves

Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

Akis, R., Faralli, N., Goodnick, S., Ferry, D. K. & Saraniti, M., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2502-2505 4 p.

Research output: Contribution to journalArticle

high electron mobility transistors
power gain
cut-off
spacing
oscillations

RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations

Marino, F. A., Guerra, D., Goodnick, S., Ferry, D. & Saraniti, M., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2445-2449 5 p.

Research output: Contribution to journalArticle

high electron mobility transistors
direct current
simulators
simulation
transport properties
3 Citations (Scopus)

The role of the source and drain contacts on self-heating effect in nanowire transistors

Vasileska, D., Hossain, A., Raleva, K. & Goodnick, S., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 180-186 7 p.

Research output: Contribution to journalArticle

Nanowires
Heating
Transistors
nanowires
transistors
2009
5 Citations (Scopus)

Ballistic transport in InP-based HEMTs

Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Phatak, K. A. & Saraniti, M., Dec 2009, In : IEEE Transactions on Electron Devices. 56, 12, p. 2935-2944 10 p., 5299052.

Research output: Contribution to journalArticle

High electron mobility transistors
Ballistics
Scattering
Semiconductor devices
Band structure
24 Citations (Scopus)

Diffusive transport in quasi-2D and quasi-1D electron systems

Knezevic, I., Ramayya, E. B., Vasileska, D. & Goodnick, S., 2009, In : Journal of Computational and Theoretical Nanoscience. 6, 8, p. 1725-1753 29 p.

Research output: Contribution to journalArticle

Scattering
Electron
Semiconductor materials
Boltzmann transport equation
Electrons
8 Citations (Scopus)

Figures of merit in high-frequency and high-power GaN HEMTs

Marino, F. A., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., 2009, In : Journal of Physics: Conference Series. 193, 012040.

Research output: Contribution to journalArticle

high electron mobility transistors
figure of merit
cut-off
electrical faults
Fourier analysis
16 Citations (Scopus)

Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

Ashok, A., Vasileska, D., Goodnick, S. & Hartin, O. L., 2009, In : IEEE Transactions on Electron Devices. 56, 5, p. 998-1006 9 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Polarization
Electric potential
Charge density
Simulators
2 Citations (Scopus)

Modeling self-heating effects in nanoscale SOI devices

Vasileska, D., Goodnick, S. & Raleva, K., 2009, In : Journal of Physics: Conference Series. 193, 012036.

Research output: Contribution to journalArticle

insulators
heating
silicon
simulators
boundary conditions
46 Citations (Scopus)

Relativistic Quantum Scars

Huang, L., Lai, Y-C., Ferry, D. K., Goodnick, S. & Akis, R., Aug 6 2009, In : Physical Review Letters. 103, 5, 054101.

Research output: Contribution to journalArticle

scars
graphene
quantum dots
wave functions
orbits
17 Citations (Scopus)

Rigid ion model of high field transport inGaN

Yamakawa, S., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., 2009, In : Journal of Physics Condensed Matter. 21, 17, 174206.

Research output: Contribution to journalArticle

Phonons
Ions
phonons
velocity distribution
ions