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Conference article
2014

High energy and spatial resolution EELS band gap measurements using a nion monochromated cold field emission HERMES dedicated STEM

Carpenter, R., Xie, H., Lehner, S., Aoki, T., Mardinly, J., Vahidi, M., Newman, N. & Ponce, F., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 70-71 2 p.

Research output: Contribution to journalConference article

1 Scopus citations
2003

Thermochemistry of MgB2 thin film synthesis

Kim, J., Singh, R., Newman, N. & Rowell, J. M., Jun 1 2003, In : IEEE Transactions on Applied Superconductivity. 13, 2 III, p. 3238-3241 4 p.

Research output: Contribution to journalConference article

55 Scopus citations
1999

High temperature growth of AlN by plasma-enhanced molecular beam epitaxy

Fan, Z. Y., Rong, G., Browning, J. & Newman, N., Dec 8 1999, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 67, 1, p. 80-87 8 p.

Research output: Contribution to journalConference article

24 Scopus citations
1994
1984

ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

Eglash, S. J., Williams, M. D., Mahowald, P. H., Newman, N., Lindau, I. & Spicer, W. E., Jan 1 1984, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2, 3, p. 481-485 5 p.

Research output: Contribution to journalConference article

12 Scopus citations

METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES.

Spicer, W. E., Pan, S., Mo, D., Newman, N., Mahowald, P., Kendelewicz, T. & Eglash, S., Jan 1 1984, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2, 3, p. 476-480 5 p.

Research output: Contribution to journalConference article

23 Scopus citations