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Research Output 1983 2019

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1990
74 Citations (Scopus)

YBa2Cu3O7-δ superconducting films with low microwave surface resistance over large areas

Newman, N., Char, K., Garrison, S. M., Barton, R. W., Taber, R. C., Eom, C. B., Geballe, T. H. & Wilkens, B., 1990, In : Applied Physics Letters. 57, 5, p. 520-522 3 p.

Research output: Contribution to journalArticle

superconducting films
microwaves
lattice parameters
critical current
sputtering
47 Citations (Scopus)

“Pinning” and Fermi level movement at GaAs surfaces and interfaces

Spicer, W. E., Newman, N. & Spindt, C. J., 1990, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 8, 3, p. 2084-2089 6 p.

Research output: Contribution to journalArticle

Fermi level
Metals
insulators
metals
Valence bands
1989
45 Citations (Scopus)

From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

Spicer, W. E., Cao, R., Miyano, K., Kendelewicz, T., Lindau, I., Weber, E., Liliental-Weber, Z. & Newman, N., Nov 2 1989, In : Applied Surface Science. 41-42, C, p. 1-16 16 p.

Research output: Contribution to journalArticle

Synchrotron radiation
synchrotron radiation
Defects
Fermi level
defects
10 Citations (Scopus)

Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts

Liliental-Weber, Z., Newman, N., Washburn, J., Weber, E. R. & Spicer, W. E., 1989, In : Applied Physics Letters. 54, 4, p. 356-358 3 p.

Research output: Contribution to journalArticle

electric contacts
contamination
annealing
ultrahigh vacuum
cleavage
5 Citations (Scopus)

Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes

Leon, R. P., Newman, N., Liliental-Weber, Z., Weber, E. R., Washburn, J. & Spicer, W. E., 1989, In : Journal of Applied Physics. 66, 2, p. 711-715 5 p.

Research output: Contribution to journalArticle

Schottky diodes
crystallites
diodes
electron beams
gold
1988
7 Citations (Scopus)

Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study

Miret, A., Newman, N., Weber, E. R., Liliental-Weber, Z., Washburn, J. & Spicer, W. E., 1988, In : Journal of Applied Physics. 63, 6, p. 2006-2010 5 p.

Research output: Contribution to journalArticle

Schottky diodes
air
diodes
time constant
recovery
11 Citations (Scopus)

Analysis of thin-film systems using nonresonant multiphoton ionization

Pallix, J. B., Becker, C. H. & Newman, N., 1988, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 6, 3, p. 1049-1052 4 p.

Research output: Contribution to journalArticle

Surface analysis
Ionization
ionization
Thin films
Photoionization
11 Citations (Scopus)

Chemical and electrical properties at the annealed Ti/GaAsf 110) interface

Mccants, C. E., Kendelewicz, T., Mahowald, P. H., Bertness, K. A., Williams, M. D., Newman, N., Lindau, I. & Spicer, W. E., 1988, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 6, 3, p. 1466-1472 7 p.

Research output: Contribution to journalArticle

chemical properties
Chemical properties
Electric properties
electrical properties
Photoemission
12 Citations (Scopus)

Schottky barrier instabilities due to contamination

Newman, N., Liliental-Weber, Z., Weber, E. R., Washburn, J. & Spicer, W. E., 1988, In : Applied Physics Letters. 53, 2, p. 145-147 3 p.

Research output: Contribution to journalArticle

contamination
diodes
annealing
cleavage
Schottky diodes
53 Citations (Scopus)

The advanced unified defect model and its applications

Spicer, W. E., Kendelewicz, T., Newman, N., Cao, R., McCants, C., Miyano, K., Lindau, I., Liliental-Weber, Z. & Weber, E. R., 1988, In : Applied Surface Science. 33-34, C, p. 1009-1029 21 p.

Research output: Contribution to journalArticle

Defects
defects
Fermi level
Electron energy levels
energy levels
1987
42 Citations (Scopus)

Electrical study of Schottky-barrier heights on atomically clean p-type InP(110) surfaces

Newman, N., Van Schilfgaarde, M. & Spicer, W. E., 1987, In : Physical Review B. 35, 12, p. 6298-6304 7 p.

Research output: Contribution to journalArticle

Metals
metals
Fermi level
air
Diodes
43 Citations (Scopus)

Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Eglash, S. J., Newman, N., Pan, S., Mo, D., Shenai, K., Spicer, W. E., Ponce, F. & Collins, D. M., 1987, In : Journal of Applied Physics. 61, 11, p. 5159-5169 11 p.

Research output: Contribution to journalArticle

Schottky diodes
diodes
capacitance-voltage characteristics
electric potential
metals
1986
125 Citations (Scopus)

Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces

Newman, N., Van Schilfgaarde, M., Kendelwicz, T., Williams, M. D. & Spicer, W. E., 1986, In : Physical Review B. 33, 2, p. 1146-1159 14 p.

Research output: Contribution to journalArticle

Metals
Diodes
diodes
metals
Thermionic emission

Erratum: Electrical study of Shottky barriers on atomically clean GaAs(110) surfaces (Physical Review B (1986), 34, 2 (1329))

Newman, N., Van Schilfgaarde, M., Kendelewicz, T., Williams, M. D. & Spicer, W. E., 1986, In : Physical Review B. 34, 2, p. 1329 1 p.

Research output: Contribution to journalArticle

19 Citations (Scopus)

Morphology of Au/GaAs interfaces

Liliental-Weber, Z., Washburn, J., Newman, N., Spicer, W. E. & Weber, E. R., 1986, In : Applied Physics Letters. 49, 22, p. 1514-1516 3 p.

Research output: Contribution to journalArticle

diodes
ultrahigh vacuum
gold
air
electron microscopy
60 Citations (Scopus)

The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments

Spicer, W. E., Kendelewicz, T., Newman, N., Chin, K. K. & Lindau, I., Mar 3 1986, In : Surface Science. 168, 1-3, p. 240-259 20 p.

Research output: Contribution to journalArticle

Metals
metals
Experiments
chemistry
III-V semiconductors
1985
33 Citations (Scopus)

Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers

Newman, N., Chin, K. K., Petro, W. G., Kendelewicz, T., Williams, M. D., McCants, C. E. & Spicer, W. E., 1985, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 3, 3, p. 996-1001 6 p.

Research output: Contribution to journalArticle

Metals
Annealing
annealing
metals
Photoelectron spectroscopy
23 Citations (Scopus)

ANNEALING OF INTIMATE Au-GaAs SCHOTTKY BARRIERS: THICK AND ULTRATHIN METAL FILMS.

Newman, N., Petro, W. G., Kendelewicz, T., Pan, S. H., Eglash, S. J. & Spicer, W. E., Jan 1 1985, In : Journal of Applied Physics. 57, 4, p. 1247-1251 5 p.

Research output: Contribution to journalArticle

metal films
annealing
photoelectric emission
Schottky diodes
electrical measurement

DETERMINATION OF THE INTERFACIAL FERMI LEVEL POSITION FOR NOBLE METALS ON GaAs(110).

Pan, S., Kendelewicz, T., Petro, W. G. & Newman, N., May 1985, In : Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 6, 3, p. 307-310 4 p.

Research output: Contribution to journalArticle

Precious metals
Fermi level
noble metals
Ultrahigh vacuum
Synchrotron radiation
72 Citations (Scopus)

Electrical study of Schottky barrier heights on atomically clean and air-exposed n-InP(110) surfaces

Newman, N., Kendelewicz, T., Bowman, L. & Spicer, W. E., 1985, In : Applied Physics Letters. 46, 12, p. 1176-1178 3 p.

Research output: Contribution to journalArticle

air
Schottky diodes
reactivity
diodes
electric potential
9 Citations (Scopus)

Electronic properties of metal/III-V semiconductor interfaces

Lindau, I., Kendelewicz, T., Newman, N., List, R. S., Williams, M. D. & Spicer, W. E., Oct 3 1985, In : Surface Science. 162, 1-3, p. 591-604 14 p.

Research output: Contribution to journalArticle

Electronic properties
Metals
electronics
metals
metal films
33 Citations (Scopus)

Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110)

Chin, K. K., Pan, S. H., Mo, D., Mahowald, P., Newman, N., Lindau, I. & Spicer, W. E., 1985, In : Physical Review B. 32, 2, p. 918-923 6 p.

Research output: Contribution to journalArticle

Electronic structure
Fermi level
electronic structure
Metals
Defects
13 Citations (Scopus)

Schottky barriers on atomically clean cleaved GaAs

Newman, N., Kendelewicz, T., Thomson, D., Pan, S. H., Eglash, S. J. & Spicer, W. E., 1985, In : Solid State Electronics. 28, 3, p. 307-312 6 p.

Research output: Contribution to journalArticle

Photoelectron spectroscopy
Precious metals
photoelectric emission
Metals
Schottky barrier diodes
4 Citations (Scopus)

Summary Abstract: Ni and Pd Schottky barriers on GaAs(110)

Williams, M. D., Kendelewicz, T., Newman, N., Lindau, I. & Spicer, W. E., 1985, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 3, 3, p. 977-978 2 p.

Research output: Contribution to journalArticle

1984
12 Citations (Scopus)

ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

Eglash, S. J., Williams, M. D., Mahowald, P. H., Newman, N., Lindau, I. & Spicer, W. E., Jul 1984, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2, 3, p. 481-485 5 p.

Research output: Contribution to journalArticle

Photoelectron spectroscopy
Arsenic
Molecular beam epitaxy
Aluminum
Synchrotron radiation
23 Citations (Scopus)

METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES.

Spicer, W. E., Pan, S., Mo, D., Newman, N., Mahowald, P., Kendelewicz, T. & Eglash, S., Jul 1984, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2, 3, p. 476-480 5 p.

Research output: Contribution to journalArticle

Precious metals
Surface chemistry
Semiconductor materials