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Research Output 1992 2019

2007

Fundamentals and applications of selenium-passivated Si(100) surface

Tao, M., 2007, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 458-461 4 p. 4098135

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Selenium
Surface states
Nanoelectronics
Ohmic contacts
Microelectronics

Integration issues in metallic source/drain nanoscale CMOS

Tao, M., Ali, M. Y. & Song, G., 2007, ECS Transactions. 6 ed. Vol. 11. p. 253-263 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical mechanical polishing
Selenium
Metals
Thermodynamic stability
Sulfur
8 Citations (Scopus)

Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Zhu, J. G., Yang, X. L. & Tao, M., Jan 21 2007, In : Journal of Physics D: Applied Physics. 40, 2, p. 547-550 4 p., 031.

Research output: Contribution to journalArticle

low resistance
Selenium
Silicon
selenium
Titanium

Metal oxide heterovalence multijunctions for third generation solar cells

Tao, M., 2007, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. Vol. 1. p. 194-197 4 p. 4059595

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
Solar cells
Metals
Energy gap
Copper oxides
115 Citations (Scopus)

Microstructured surface design for omnidirectional antireflection coatings on solar cells

Zhou, W., Tao, M., Chen, L. & Yang, H., 2007, In : Journal of Applied Physics. 102, 10, 103105.

Research output: Contribution to journalArticle

antireflection coatings
solar cells
quantum dots
refractivity
reflectance
7 Citations (Scopus)

Monolayer passivation of silicon(0 0 1) surface by selenium

Tao, M., Maldonado, E. & Kirk, W. P., Mar 15 2007, In : Applied Surface Science. 253, 10, p. 4578-4580 3 p.

Research output: Contribution to journalArticle

Selenium
Silicon
selenium
Passivation
passivity
12 Citations (Scopus)

Passivation of a Si(100) surface by S from solution

Ali, M. Y. & Tao, M., 2007, In : Electrochemical and Solid-State Letters. 10, 11, p. 317-320 4 p.

Research output: Contribution to journalArticle

Passivation
passivity
etchants
Ammonium Hydroxide
Ammonium hydroxide
1 Citation (Scopus)

Passivation of Si(100) surface by S from a solution and its effect on Schottky barrier height

Ali, M. Y. & Tao, M., 2007, ECS Transactions. 2 ed. Vol. 6. p. 489-497 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
Surface states
Ammonium hydroxide
Dangling bonds
Metals
67 Citations (Scopus)

Surface texturing by solution deposition for omnidirectional antireflection

Tao, M., Zhou, W., Yang, H. & Chen, L., 2007, In : Applied Physics Letters. 91, 8, 081118.

Research output: Contribution to journalArticle

coatings
textures
solar cells
silicon dioxide
microbalances
8 Citations (Scopus)

X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001)

Aguirre-Tostado, F. S., Layton, D., Herrera-Gomez, A., Wallace, R. M., Zhu, J., Larrieu, G., Maldonado, E., Kirk, W. P. & Tao, M., 2007, In : Journal of Applied Physics. 102, 8, 084901.

Research output: Contribution to journalArticle

photoelectron spectroscopy
oxidation
selenium
passivity
silicon
2006

An inorganic approach to wet-chemical fabrication of 3rd generation tandem cells

Tao, M., 2006, 2006 International Conference on Electronic Materials and Packaging, EMAP. 4430577

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fabrication

High-k/Si interface engineering using a valence-mending technique

Tao, M., 2006, ECS Transactions. 1 ed. Vol. 2. p. 129-143 15 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
Ultrahigh vacuum
Leakage currents
Hysteresis
Chemical vapor deposition

Low-resistance Ti/n-type Si(100) contacts by monolayer Se passivation

Zhu, J. G., Yang, X. L. & Tao, M., 2006, ECS Transactions. 2 ed. Vol. 2. p. 401-409 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
Monolayers
Contact resistance
Substrates
Interface states
157 Citations (Scopus)

LSDA+U study of cupric oxide: Electronic structure and native point defects

Wu, D., Zhang, Q. & Tao, M., 2006, In : Physical Review B - Condensed Matter and Materials Physics. 73, 23, 235206.

Research output: Contribution to journalArticle

Antiferromagnetic materials
p-type semiconductors
Carrier mobility
Silicon
Point defects

Modeling growth behavior for Si1-xGex from SiH 4 and GeH4 by CVD

Yang, X. L. & Tao, M., 2006, ECS Transactions. 2 ed. Vol. 2. p. 299-309 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical vapor deposition
Decomposition
Flow rate
Silicon
Silanes
6 Citations (Scopus)

Suppression of high-resistance phases of Ni silicide by Se passivation of Si(100)

Shanmugam, J., Zhu, J., Xu, Y., Kirk, W. P. & Tao, M., Apr 2006, In : IEEE Transactions on Electron Devices. 53, 4, p. 719-723 5 p.

Research output: Contribution to journalArticle

Sheet resistance
high resistance
Passivation
passivity
retarding

Thermal stability of low resistance ohmic contacts between Ti and Se-passivated N-type Si(001)

Udeshi, D., Maldonado, E., Xu, Y., Tao, M. & Kirk, W. P., 2006, Proceedings - Electrochemical Society. Vol. PV 2003-31. p. 316-325 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohmic contacts
Thermodynamic stability
Activation energy
Electric power measurement
Dangling bonds
2005
37 Citations (Scopus)

A kinetic model for boron and phosphorus doping in silicon epitaxy by CVD

Mehta, B. & Tao, M., 2005, In : Journal of the Electrochemical Society. 152, 4

Research output: Contribution to journalArticle

Boron
Silicon
phosphine
Epitaxial growth
epitaxy

Effect of a Se monolayer on interface properties between AL 2O 3 and N-type Si(100)

Larrieu, G., Song, G., Moumen, N., Maldonado, E., Kirk, W. P. & Tao, M., 2005, ECS Transactions. 5 ed. Vol. 1. p. 371-379 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Monolayers
Vacuum
Dangling bonds
Passivation
Leakage currents
3 Citations (Scopus)

Electrical characterization of interface stability between magnesium and selenium-passivated n-type silicon (001)

Udeshi, D., Ali, M. Y., Tao, M., Maldonado, E., Basit, N. & Kirk, W. P., Dec 2005, In : International Journal of Electronics. 92, 12, p. 719-727 9 p.

Research output: Contribution to journalArticle

Selenium
Magnesium
Silicon
Passivation
Dangling bonds

Nondestructive thickness determination of high-k dielectric HfO 2 and interfacial oxide by spectroscopic ellipsometry

Song, G., Yang, X., Tao, M. & Huang, J., Sep 9 2005, AIP Conference Proceedings. Vol. 788. p. 177-181 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ellipsometry
oxides
transmission electron microscopy
evaporation
oxidation

Silicon complementary metal-oxide-semiconductor field-effect transistor

Tao, M., Wallace, R. M., Cleavelin, C. R. & Wise, R. L., Jun 2005, In : Electrochemical Society Interface. 14, 2, p. 26-27 2 p.

Research output: Contribution to journalArticle

MOSFET devices
Silicon
Telecommunication
13 Citations (Scopus)

Stability of Se passivation layers on Si(001) surfaces characterized by time-of-flight positron annihilation induced Auger electron spectroscopy

Zhu, J. G., Nadesalingam, M. P., Weiss, A. H. & Tao, M., May 15 2005, In : Journal of Applied Physics. 97, 10, 103510.

Research output: Contribution to journalArticle

positron annihilation
passivity
Auger spectroscopy
electron spectroscopy
oxygen
2004

A kinetic model for P-type doping in silicon epitaxy by CVD

Mehta, B. & Tao, M., 2004, Proceedings - Electrochemical Society. Claeys, C. L., Watanabe, M., Falster, R. J. & Stallhofer, P. (eds.). Vol. 5. p. 12-22 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Partial pressure
Chemical vapor deposition
Doping (additives)
Silicon
5 Citations (Scopus)

Electrical breakdown in a two-layer dielectric in the MOS structure

Yang, X., Xie, Q. & Tao, M., 2004, Materials Research Society Symposium Proceedings. Morais, J., Kumar, D., Houssa, M., Singh, R. K., Landheer, D., Ramesh, R., Wallace, R. M., Guha, S. & Koinuma, H. (eds.). Vol. 811. p. 43-48 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric breakdown
Oxides
Permittivity
Electric potential
51 Citations (Scopus)

Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts

Tao, M., Udeshi, D., Agarwal, S., Maldonado, E. & Kirk, W. P., Feb 2004, In : Solid-State Electronics. 48, 2, p. 335-338 4 p.

Research output: Contribution to journalArticle

Ohmic contacts
low resistance
Titanium
electric contacts
titanium
4 Citations (Scopus)
Ohmic contacts
low resistance
Titanium
Electron energy levels
electric contacts
2 Citations (Scopus)

Se-passivated Si(100) surface for low and negative Schottky barriers

Tao, M., Udeshi, D., Agarwal, S., Kolappan, R., Xu, Y., Maldonado, E. & Kirk, W. P., 2004, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. Qu, X. P., Ru, G. P., Li, B. Z., Mizuno, B. & Iwai, H. (eds.). Institute of Electrical and Electronics Engineers Inc., Vol. 4. p. 119-122 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metals
Interface states
Electron affinity
Dangling bonds
Fermi level

Suppression of Ni silicide formation by Se passivation of Si(001)

Shanmugam, J., Coviello, M., Udeshi, D., Kirk, W. P. & Tao, M., 2004, Materials Research Society Symposium - Proceedings. Pichler, P., Claverie, A., Lindsay, R., Orlowski, M. & Windl, W. (eds.). Vol. 810. p. 129-134 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
MOS devices
Chemical stability
Surface structure
Monolayers
11 Citations (Scopus)

Suppression of silicon (001) surface reactivity using a valence-mending technique

Tao, M., Shanmugam, J., Coviello, M. & Kirk, W. P., Oct 2004, In : Solid State Communications. 132, 2, p. 89-92 4 p.

Research output: Contribution to journalArticle

Silicon
reactivity
retarding
valence
Chemical reactivity
1 Citation (Scopus)

Thermally-oxidized HfO 2 on Se-passivated n-type Si(100)

Tao, M., Yang, X. & Kirk, W. P., 2004, Proceedings - Electrochemical Society. Singh, R., Iwai, H., Tummala, R. R. & Sun, S. C. (eds.). Vol. 4. p. 425-433 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
Electric properties
Oxidation
Dangling bonds
Surface states
13 Citations (Scopus)

Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

Udeshi, D., Maldonado, E., Xu, Y., Tao, M. & Kirk, W. P., Apr 15 2004, In : Journal of Applied Physics. 95, 8, p. 4219-4222 4 p.

Research output: Contribution to journalArticle

electric contacts
thermal stability
energy methods
capacitance
activation energy
2003
3 Citations (Scopus)

Electrical and optical effects in molecular nanoscopic-sized building blocks

Kirk, W. P., Wouters, K. L., Basit, N. A., MacDonnell, F. M., Tao, M. & Clark, K. P., Jul 2003, In : Physica E: Low-Dimensional Systems and Nanostructures. 19, 1-2, p. 126-132 7 p.

Research output: Contribution to journalArticle

Molecular electronics
Thin films
Molecules
Ruthenium
Biomimetics

Growth of monolayered organic films for nanostructured nonlinear photonic devices

Li, F., Priambodo, P. S., Dallas, N., Rege, M., Tao, M., Maldonado, T. A., Zhou, M., Pomerantz, M. & Magnusson, R., 2003, OSA Trends in Optics and Photonics Series. Optical Society of American (OSA), Vol. 88. p. 795-796 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photonic devices
Phase matching
Self assembled monolayers
Surface morphology
Substrates
1 Citation (Scopus)

Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs

Tao, M., Udeshi, D., Agarwal, S., Basit, N., Maldonado, E. & Kirk, W. P., 2003, Materials Research Society Symposium - Proceedings. King, T-J., Yu, B., Lander, R. J. P. & Saito, S. (eds.). Vol. 765. p. 297-302 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metals
Chromium
Aluminum
Selenium
Industrial laboratories
66 Citations (Scopus)

Low Schottky barriers on n-type silicon (001)

Tao, M., Agarwal, S., Udeshi, D., Basit, N., Maldonado, E. & Kirk, W. P., Sep 29 2003, In : Applied Physics Letters. 83, 13, p. 2593-2595 3 p.

Research output: Contribution to journalArticle

silicon
selenium
stopping
metals
72 Citations (Scopus)

Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

Tao, M., Udeshi, D., Basit, N., Maldonado, E. & Kirk, W. P., Mar 10 2003, In : Applied Physics Letters. 82, 10, p. 1559-1561 3 p.

Research output: Contribution to journalArticle

selenium
magnesium
silicon
thermal stability
electrical properties
2001
3 Citations (Scopus)

A potential interconnection method in molecular electronics

Tao, M., 2001, Materials Research Society Symposium - Proceedings. Merhari, L., Rogers, J. A., Karim, A. & Norris, D. J. (eds.). Vol. 636.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molecular electronics
Molecules
Chemical reactions
Acetylene
Networks (circuits)
1 Citation (Scopus)

Misalignment tolerance in the 100-nm T-gate recessed-channel Si nMOSFET

Tao, M., Gao, F. & Chen, C., Dec 2001, In : IEEE Transactions on Electron Devices. 48, 12, p. 2951-2953 3 p.

Research output: Contribution to journalArticle

misalignment
implantation
dosage
2 Citations (Scopus)

On the structure of the recessed-channel MOSFET for sub-100 nm Si CMOS

Tao, M. & Varahramyan, K., Oct 2001, In : Solid-State Electronics. 45, 10, p. 1805-1808 4 p.

Research output: Contribution to journalArticle

CMOS
field effect transistors
Doping (additives)
misalignment
profiles
2000
11 Citations (Scopus)

A kinetic model for metalorganic chemical vapor deposition from trimethylgallium and arsine

Tao, M., Apr 2000, In : Journal of Applied Physics. 87, 7, p. 3554-3562 9 p.

Research output: Contribution to journalArticle

metalorganic chemical vapor deposition
gallium
kinetics
antisite defects
phosphides
1999
1 Citation (Scopus)

Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

Tao, M. & Lyding, J. W., Apr 5 1999, In : Applied Physics Letters. 74, 14, p. 2020-2022 3 p.

Research output: Contribution to journalArticle

scanning tunneling microscopy
defects
1997
8 Citations (Scopus)

A kinetic model for photochemical vapor deposition from germane and silane

Tao, M., Oct 10 1997, In : Thin Solid Films. 307, 1-2, p. 71-78 8 p.

Research output: Contribution to journalArticle

Silanes
Vapor deposition
silanes
vapor deposition
Kinetics
8 Citations (Scopus)

Crystal growth in silicon chemical vapor deposition from silane: The role of hydrogen

Tao, M. & Hunt, L. P., Jun 1997, In : Journal of the Electrochemical Society. 144, 6, p. 2221-2225 5 p.

Research output: Contribution to journalArticle

Silanes
Silicon
Crystallization
Epitaxial growth
Crystal growth
5 Citations (Scopus)

Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices

Park, D. G., Li, D., Tao, M., Fan, Z., Botchkarev, A. E., Mohammad, S. N. & Morkoç, H., Jan 1 1997, In : Journal of Applied Physics. 81, 1, p. 516-523 8 p.

Research output: Contribution to journalArticle

MIS (semiconductors)
semiconductor devices
transconductance
minority carriers
capacitors
1996
4 Citations (Scopus)
Ultrahigh vacuum
Silicon nitride
silicon nitrides
ultrahigh vacuum
Chemical vapor deposition
59 Citations (Scopus)

Electrical conduction in silicon nitrides deposited by plasma enhanced chemical vapour deposition

Tao, M., Park, D., Mohammad, S. N., Li, D., Botchkerav, A. E. & Morkoç, H., Apr 1996, In : Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 73, 4, p. 723-736 14 p.

Research output: Contribution to journalArticle

Plasma enhanced chemical vapor deposition
Silicon nitride
silicon nitrides
Field emission
vapor deposition
1995
4 Citations (Scopus)

Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures

Reed, J., Tao, M., Park, D. G., Botchkarev, A., Fan, Z., Suzue, S. K., Li, D., Gao, G. B., Mohammad, S. N., Chey, S. J., van Nostrand, J. E., Cahill, D. G. & Morkoç, H., 1995, In : Solid State Electronics. 38, 7, p. 1351-1357 7 p.

Research output: Contribution to journalArticle

MIS (semiconductors)
MISFET devices
Metals
Semiconductor materials
Rapid thermal annealing
10 Citations (Scopus)

GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition

Park, D. G., Tao, M., Reed, J., Suzue, K., Botchkarev, A. E., Fan, Z., Gao, G. B., Chey, S. J., Van Nostrand, J., Cahill, D. G. & Morkoc, H., May 1 1995, In : Journal of Crystal Growth. 150, 1 -4 pt 2, p. 1275-1280 6 p.

Research output: Contribution to journalArticle

MIS (semiconductors)
Molecular beam epitaxy
Chemical vapor deposition
MISFET devices
molecular beam epitaxy
12 Citations (Scopus)

Improved Si3N4/Si/GaAs metal-insulator-semiconductor interfaces by in situ anneal of the as-deposited Si

Tao, M., Botchkarev, A. E., Park, D., Reed, J., Chey, S. J., Van Nostrand, J. E., Cahill, D. G. & Morkoç, H., 1995, In : Journal of Applied Physics. 77, 8, p. 4113-4115 3 p.

Research output: Contribution to journalArticle

MIS (semiconductors)
crystals
stoichiometry
interlayers
crystallinity