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Research Output 1976 2019

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1996
58 Citations (Scopus)

Direct imaging of impurity-induced Raman scattering in GaN

Ponce, F., Steeds, J. W., Dyer, C. D. & Pitt, G. D., Oct 28 1996, In : Applied Physics Letters. 69, 18, p. 2650-2652 3 p.

Research output: Contribution to journalArticle

Raman spectra
impurities
crystallites
silicon
interactions
5 Citations (Scopus)

Transmission electron microscopy of the AlN-SiC interface

Ponce, F., O'Keefe, M. A. & Nelson, E. C., Sep 1996, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 74, 3, p. 777-789 13 p.

Research output: Contribution to journalArticle

High resolution transmission electron microscopy
Charge density
Transmission electron microscopy
transmission electron microscopy
Substrates
1995
886 Citations (Scopus)

High dislocation densities in high efficiency GaN-based light-emitting diodes

Lester, S. D., Ponce, F., Craford, M. G. & Steigerwald, D. A., Mar 6 1995, In : Applied Physics Letters. 66, 10, p. 1249-1251 3 p.

Research output: Contribution to journalArticle

minority carriers
light emitting diodes
nitrides
20 Citations (Scopus)

High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

Fertitta, K. G., Holmes, A. L., Ciuba, F. J., Dupuis, R. D. & Ponce, F., Apr 1995, In : Journal of Electronic Materials. 24, 4, p. 257-261 5 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
X rays
x ray diffraction
Diffraction
98 Citations (Scopus)

Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

Ponce, F., Bour, D. P., Götz, W., Johnson, N. M., Helava, H. I., Grzegory, I., Jun, J. & Porowski, S., 1995, In : Applied Physics Letters. p. 917 1 p.

Research output: Contribution to journalArticle

metalorganic chemical vapor deposition
single crystals
excitons
inclusions
luminescence
183 Citations (Scopus)

Microstructure of GaN epitaxy on SiC using AlN buffer layers

Ponce, F., Krusor, B. S., Major, J. S., Plano, W. E. & Welch, D. F., 1995, In : Applied Physics Letters. 67, p. 410 1 p.

Research output: Contribution to journalArticle

epitaxy
buffers
microstructure
crystallites
metalorganic chemical vapor deposition
326 Citations (Scopus)

Spatial distribution of the luminescence in GaN thin films

Ponce, F., Bour, D. P., Götz, W. & Wright, P. J., 1995, In : Applied Physics Letters. p. 57 1 p.

Research output: Contribution to journalArticle

spatial distribution
luminescence
thin films
defects
cathodoluminescence
1994
109 Citations (Scopus)

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

Ponce, F., Major, J. S., Plano, W. E. & Welch, D. F., 1994, In : Applied Physics Letters. 65, 18, p. 2302-2304 3 p.

Research output: Contribution to journalArticle

epitaxy
sapphire
buffers
crystal defects
metalorganic chemical vapor deposition
2 Citations (Scopus)

Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers

Thornton, R. L., Bour, D. P., Treat, D., Ponce, F., Tramontana, J. C. & Endicott, F. J., 1994, In : Applied Physics Letters. 65, 21, p. 2696-2698 3 p.

Research output: Contribution to journalArticle

retarding
impurities
defects
transmission electron microscopy
255 Citations (Scopus)

Self-limiting oxidation for fabricating sub-5 nm silicon nanowires

Liu, H. I., Biegelsen, D. K., Ponce, F., Johnson, N. M. & Pease, R. F. W., 1994, In : Applied Physics Letters. 64, 11, p. 1383-1385 3 p.

Research output: Contribution to journalArticle

nanowires
oxidation
silicon
progressions
diffusivity
107 Citations (Scopus)

Strained GaxIn1-xP/(AlGa)0.5In0.5P heterostructures and quantum-well laser diodes

Bour, D. P., Geels, R. S., Treat, D. W., Ponce, F., Ponce, F., Thorton, R. L., Krusor, B. S., Bringans, R. D. & Welch, D. F., Feb 1994, In : IEEE Journal of Quantum Electronics. 30, 2, p. 593-607 15 p.

Research output: Contribution to journalArticle

Quantum well lasers
quantum well lasers
algae
Algae
Semiconductor lasers
1993
16 Citations (Scopus)

Critical thickness determination of InAs, InP and GaP on GaAs by X-ray interference effect and transmission electron microscopy

Mazuelas, A., González, L., Ponce, F., Tapfer, L. & Briones, F., 1993, In : Journal of Crystal Growth. 131, 3-4, p. 465-469 5 p.

Research output: Contribution to journalArticle

Wave interference
Monolayers
Reflection high energy electron diffraction
Transmission electron microscopy
Dislocations (crystals)
59 Citations (Scopus)

Epitaxial BaTiO3/MgO structure grown on GaAs(100) by pulsed laser deposition

Nashimoto, K., Fork, D. K., Ponce, F. & Tramontana, J. C., Sep 1993, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 32, 9 B, p. 4099-4102 4 p.

Research output: Contribution to journalArticle

Pulsed laser deposition
pulsed laser deposition
Thin films
Defect density
thin films

Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

Molina, S. I., Aragón, G., González, Y., González, L., Briones, F., Ponce, F. & García, R., 1993, In : Materials Letters. 15, 5-6, p. 353-355 3 p.

Research output: Contribution to journalArticle

antiphase boundaries
High resolution electron microscopy
electron microscopy
high resolution
Defects
1 Citation (Scopus)

Strain and defect generation during interdiffusion of GaAs into Al 0.5In0.5P

Thornton, R. L., Ponce, F., Anderson, G. B. & Endicott, F. J., 1993, In : Applied Physics Letters. 62, 17, p. 2060-2062 3 p.

Research output: Contribution to journalArticle

defects
coefficients
half spaces
diffusion coefficient
profiles
4 Citations (Scopus)

Structural characterization of gaas/gap superlattices

Mazuelas, A., Ruizt, A., Ponce, F. & Briones, F., Apr 14 1993, In : Journal of Physics D: Applied Physics. 26, 4, p. A167-A172

Research output: Contribution to journalArticle

Lattice mismatch
Superlattices
superlattices
Molecular beam epitaxy
molecular beam epitaxy
1992
52 Citations (Scopus)

Effect of interface chemistry on the growth of ZnSe on the Si(100) surface

Bringans, R. D., Biegelsen, D. K., Swartz, L. E., Ponce, F. & Tramontana, J. C., 1992, In : Physical Review B. 45, 23, p. 13400-13406 7 p.

Research output: Contribution to journalArticle

Epitaxial growth
chemistry
epitaxy
Transmission electron microscopy
solid phases
9 Citations (Scopus)

Thermal donor formation and annihilation in oxygen-implanted float-zone silicon

Hahn, S., Stein, H. J., Shatas, S. C. & Ponce, F., 1992, In : Journal of Applied Physics. 72, 5, p. 1758-1765 8 p.

Research output: Contribution to journalArticle

float zones
silicon
oxygen
carbon
precipitates
24 Citations (Scopus)

Use of ZnSe as an interlayer for GaAs growth on Si

Bringans, R. D., Biegelsen, D. K., Swartz, L. E., Ponce, F. & Tramontana, J. C., 1992, In : Applied Physics Letters. 61, 2, p. 195-197 3 p.

Research output: Contribution to journalArticle

interlayers
epitaxy
molecular beams
solid phases
defects
1991
234 Citations (Scopus)

Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition

Fork, D. K., Ponce, F., Tramontana, J. C. & Geballe, T. H., 1991, In : Applied Physics Letters. 58, 20, p. 2294-2296 3 p.

Research output: Contribution to journalArticle

pulsed laser deposition
thin films
epitaxy
critical current
alignment
34 Citations (Scopus)

High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

Fork, D. K., Ponce, F., Tramontana, J. C., Newman, N., Phillips, J. M. & Geballe, T. H., 1991, In : Applied Physics Letters. 58, 21, p. 2432-2434 3 p.

Research output: Contribution to journalArticle

critical current
sapphire
current density
silicon
thin films
91 Citations (Scopus)

Hydrogen in crystalline semiconductors. A review of experimental results

Johnson, N. M., Doland, C., Ponce, F., Walker, J. & Anderson, G., 1991, In : Physica B: Physics of Condensed Matter. 170, 1-4, p. 3-20 18 p.

Research output: Contribution to journalArticle

Hydrogen
Semiconductor materials
Crystalline materials
hydrogen
Doping (additives)
73 Citations (Scopus)

Reactions at the interfaces of thin films of Y-Ba-Cu- and Zr-oxides with Si substrates

Fenner, D. B., Viano, A. M., Fork, D. K., Connell, G. A. N., Boyce, J. B., Ponce, F. & Tramontana, J. C., 1991, In : Journal of Applied Physics. 69, 4, p. 2176-2182 7 p.

Research output: Contribution to journalArticle

yttria-stabilized zirconia
oxides
thin films
photoelectron spectroscopy
x rays
1990
37 Citations (Scopus)

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

Winer, K., Anderson, G. B., Ready, S. E., Bachrach, R. Z., Johnson, R. I., Ponce, F. & Boyce, J. B., 1990, In : Applied Physics Letters. 57, 21, p. 2222-2224 3 p.

Research output: Contribution to journalArticle

excimer lasers
amorphous silicon
crystallization
impurities
flux density
5 Citations (Scopus)

In-situ growth of superconducting yba2cu3oyfilms by pulsed laser deposition

Boyce, J. B., Connell, G. A. N., Fork, D. K., Fenner, D. B., Char, K., Ponce, F., Bridges, F., Tramontana, J., Viano, A. M., Laderman, S. S., Taber, R. C., Tahara, S. & Geballe, T. H., Mar 19 1990, In : Proceedings of SPIE - The International Society for Optical Engineering. 1187, p. 136-147 12 p.

Research output: Contribution to journalArticle

Pulsed Laser Deposition
Pulsed laser deposition
pulsed laser deposition
Substrate
Substrates
30 Citations (Scopus)

Misfit dislocations in GaAs heteroepitaxy on (001) Si

Gerthsen, D., Biegelsen, D. K., Ponce, F. & Tramontana, J. C., 1990, In : Journal of Crystal Growth. 106, 2-3, p. 157-165 9 p.

Research output: Contribution to journalArticle

Dislocations (crystals)
Epitaxial growth
Stacking faults
crystal defects
Crystal atomic structure
1989
22 Citations (Scopus)

High-resolution transmission electron microscopy of 60° dislocations in si-GaAs

Gerthsen, D., Ponce, F. & Anderson, G. B., May 1989, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 59, 5, p. 1045-1058 14 p.

Research output: Contribution to journalArticle

High resolution transmission electron microscopy
transmission electron microscopy
high resolution
gallium arsenide
configurations
1 Citation (Scopus)

Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor

Epler, J. E., Bringans, R. D., Ponce, F., Anderson, G. B., Treat, D. W. & Paoli, T. L., Dec 2 1989, In : Applied Surface Science. 43, 1-4, p. 432-438 7 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Desorption
desorption
reactors
12 Citations (Scopus)

Microscopic aspects of oxygen precipitation in silicon

Ponce, F. & Hahn, S., 1989, In : Materials Science and Engineering B. 4, 1-4, p. 11-17 7 p.

Research output: Contribution to journalArticle

Silicon
Oxygen
Frenkel defects
Defects
silicon
4 Citations (Scopus)

On the structure of small palladium particles

Herrera, R., Avalos-Borja, M., Ponce, F., Schabes-Retchkiman, P., Romeu, D. & José-Yacamán, M., 1989, In : Scripta Metallurgica. 23, 9, p. 1555-1558 4 p.

Research output: Contribution to journalArticle

Palladium
Microscopic examination
36 Citations (Scopus)

Simple ion milling preparation of 〈111〉 tungsten tips

Biegelsen, D. K., Ponce, F. & Tramontana, J. C., 1989, In : Applied Physics Letters. 54, 13, p. 1223-1225 3 p.

Research output: Contribution to journalArticle

tungsten
preparation
ions
ion beams
microscopes
12 Citations (Scopus)

Thin film backside gettering in n-type (100) Czochralski silicon during simulated CMOS process cycles

Partanen, J., Tuomi, T., Tilli, M., Hahn, S., Wong, C. C. D. & Ponce, F., May 1989, In : Journal of Materials Research. 4, 3, p. 623-633 11 p.

Research output: Contribution to journalArticle

Silicon
CMOS
Polysilicon
Thin films
cycles
1988
40 Citations (Scopus)

Effects of heavy boron doping upon oxygen precipitation in Czochralski silicon

Hahn, S., Ponce, F., Tiller, W. A., Stojanoff, V., Bulla, D. A. P. & Castro, W. E., 1988, In : Journal of Applied Physics. 64, 9, p. 4454-4465 12 p.

Research output: Contribution to journalArticle

boron
precipitates
annealing
silicon
oxygen
19 Citations (Scopus)

Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy

Biegelsen, D. K., Ponce, F., Krusor, B. S., Tramontana, J. C. & Yingling, R. D., 1988, In : Applied Physics Letters. 52, 21, p. 1779-1781 3 p.

Research output: Contribution to journalArticle

molecular beams
nucleation
coalescing
buffers
vapors
12 Citations (Scopus)

Layer disordering of GaAs-AlGaAs superlattices by diffusion of laser-incorporated Si

Epler, J. E., Ponce, F., Endicott, F. J. & Paoli, T. L., 1988, In : Journal of Applied Physics. 64, 7, p. 3439-3444 6 p.

Research output: Contribution to journalArticle

aluminum gallium arsenides
superlattices
impurities
lasers
transmission electron microscopy
68 Citations (Scopus)

Preparation of oriented Bi-Ca-Sr-Cu-O thin films using pulsed laser deposition

Fork, D. K., Boyce, J. B., Ponce, F., Johnson, R. I., Anderson, G. B., Connell, G. A. N., Eom, C. B. & Geballe, T. H., 1988, In : Applied Physics Letters. 53, 4, p. 337-339 3 p.

Research output: Contribution to journalArticle

pulsed laser deposition
preparation
superconducting films
oxygen
thin films
23 Citations (Scopus)

The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si

Bringans, R. D., Olmstead, M. A., Ponce, F., Biegelsen, D. K., Krusor, B. S. & Yingling, R. D., 1988, In : Journal of Applied Physics. 64, 7, p. 3472-3475 4 p.

Research output: Contribution to journalArticle

epitaxy
wedges
coalescing
spectroscopy
wetting
1987
400 Citations (Scopus)

Defects in single-crystal silicon induced by hydrogenation

Johnson, N. M. P., Ponce, F., Street, R. A. & Nemanich, R., 1987, In : Physical Review B. 35, 8, p. 4166-4169 4 p.

Research output: Contribution to journalArticle

Silicon
Hydrogenation
hydrogenation
Deep level transient spectroscopy
Photoluminescence spectroscopy
16 Citations (Scopus)

Effects of boron concentration upon oxygen precipitation in CZ silicon

Bulla, D. A. P., Castro, W. E., Stojanoff, V., Ponce, F., Hahn, S. & Tiller, W. A., Nov 1 1987, In : Journal of Crystal Growth. 85, 1-2, p. 91-96 6 p.

Research output: Contribution to journalArticle

Boron
Silicon
X ray scattering
boron
Growth kinetics
41 Citations (Scopus)

Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Eglash, S. J., Newman, N., Pan, S., Mo, D., Shenai, K., Spicer, W. E., Ponce, F. & Collins, D. M., 1987, In : Journal of Applied Physics. 61, 11, p. 5159-5169 11 p.

Research output: Contribution to journalArticle

Schottky diodes
diodes
capacitance-voltage characteristics
electric potential
metals
111 Citations (Scopus)

Initial stages of epitaxial growth of GaAs on (100) silicon

Biegelsen, D. K., Ponce, F., Smith, A. J. & Tramontana, J. C., 1987, In : Journal of Applied Physics. 61, 5, p. 1856-1859 4 p.

Research output: Contribution to journalArticle

silicon
spacing
crystal defects
molecular beams
thick films
77 Citations (Scopus)

Ion milled tips for scanning tunneling microscopy

Biegelsen, D. K., Ponce, F., Tramontana, J. C. & Koch, S. M., 1987, In : Applied Physics Letters. 50, 11, p. 696-698 3 p.

Research output: Contribution to journalArticle

scanning tunneling microscopy
ions
tungsten
curvature
radii
1986
41 Citations (Scopus)

Interface structure in heteroepitaxial CdTe on GaAs(100)

Ponce, F., Anderson, G. B. & Ballingall, J. M., Mar 3 1986, In : Surface Science. 168, 1-3, p. 564-570 7 p.

Research output: Contribution to journalArticle

Burgers vector
Substrates
High resolution transmission electron microscopy
Epitaxial growth
Molecular beam epitaxy
94 Citations (Scopus)

Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski silicon

Tiller, W. A., Hahn, S. & Ponce, F., 1986, In : Journal of Applied Physics. 59, 9, p. 3255-3266 12 p.

Research output: Contribution to journalArticle

silicon dioxide
thermodynamics
precipitates
kinetics
silicon
1985
20 Citations (Scopus)
zinc selenides
metalorganic chemical vapor deposition
crystals
defects
grain boundaries
17 Citations (Scopus)

Interface effects in amorphous silicon/nitride multilayers

Tsai, C. C., Thompson, M. J., Street, R. A., Stutzmann, M. & Ponce, F., Dec 2 1985, In : Journal of Non-Crystalline Solids. 77-78, PART 2, p. 995-998 4 p.

Research output: Contribution to journalArticle

Secondary ion mass spectrometry
Amorphous silicon
Silicon nitride
silicon nitrides
amorphous silicon
42 Citations (Scopus)

RESONANT TUNNELING IN GaAs/AlAs HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.

Bonnefoi, A. R., Collins, R. T., McGill, T. C., Burnham, R. D. & Ponce, F., Feb 1 1985, In : Applied Physics Letters. 46, 3, p. 285-287 3 p.

Research output: Contribution to journalArticle

metalorganic chemical vapor deposition
resonant tunneling
curves
quantum wells
energy levels
1983
13 Citations (Scopus)
Organometallics
Heterojunctions
Chemical vapor deposition
Luminescence
Photoluminescence
36 Citations (Scopus)

Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor deposition

Ponce, F., Stutius, W. & Werthen, J. G., Jun 17 1983, In : Thin Solid Films. 104, 1-2, p. 133-143 11 p.

Research output: Contribution to journalArticle

Organometallics
Heterojunctions
heterojunctions
Chemical vapor deposition
vapor deposition
8 Citations (Scopus)

STRUCTURAL CHARACTERIZATION OF LOW-DEFECT-DENSITY SILICON ON SAPPHIRE.

Carey, K. W., Ponce, F., Amano, J. & Aranovich, J., Aug 1983, In : Journal of Applied Physics. 54, 8, p. 4414-4420 7 p.

Research output: Contribution to journalArticle

sapphire
defects
silicon
brackets
epitaxy