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Research Output 1976 2019

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2003
38 Citations (Scopus)

Structural and optical characterization of nonpolar GaN/AlN quantum wells

Ng, H. M., Bell, A., Ponce, F. & Chu, S. N. G., Jul 28 2003, In : Applied Physics Letters. 83, 4, p. 653-655 3 p.

Research output: Contribution to journalArticle

quantum wells
sapphire
molecular beam epitaxy
luminescence
diffraction
13 Citations (Scopus)

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

Hu, C. W., Bell, A., Shi, L., Ponce, F., Smith, D. & Tsong, I. S. T., Apr 28 2003, In : Applied Physics Letters. 82, 17, p. 2889-2891 3 p.

Research output: Contribution to journalArticle

optical properties
vapors
Raman spectroscopy
assembly
atomic force microscopy
2002
29 Citations (Scopus)

Atomic arrangement at the AlN/ZrB2 interface

Liu, R., Bell, A., Ponce, F., Kamiyama, S., Amano, H. & Akasaki, I., Oct 21 2002, In : Applied Physics Letters. 81, 17, p. 3182-3184 3 p.

Research output: Contribution to journalArticle

buffers
ternary alloys
vapor phase epitaxy
electron microscopy
boron
47 Citations (Scopus)

Bright, crack-free InGaN/GaN light emitters on Si(111)

Dadgar, A., Poschenrieder, M., Contreras, O., Christen, J., Fehse, K., Bläsing, J., Diez, A., Schulze, F., Riemann, T., Ponce, F. & Krost, A., Aug 2002, In : Physica Status Solidi (A) Applied Research. 192, 2, p. 308-313 6 p.

Research output: Contribution to journalArticle

interlayers
emitters
cracks
Cracks
output
42 Citations (Scopus)
Electron holography
Charge distribution
Charge density
holography
charge distribution
39 Citations (Scopus)

Electron holography studies of the charge on dislocations in GaN

Cherns, D., Jiao, C. G., Mokhtari, H., Cai, J. & Ponce, F., Dec 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 924-930 7 p.

Research output: Contribution to journalArticle

Electron holography
holography
Edge dislocations
Screw dislocations
Fermi level
37 Citations (Scopus)

Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

Hu, C. W., Bell, A., Ponce, F., Smith, D. & Tsong, I. S. T., Oct 21 2002, In : Applied Physics Letters. 81, 17, p. 3236-3238 3 p.

Research output: Contribution to journalArticle

quantum dots
vapors
liquids
cathodoluminescence
wurtzite
4 Citations (Scopus)

Low-energy electron-excited nanoluminescence studies of GaN and related materials

Brillson, L. J., Bradley, S. T., Goss, S. H., Sun, X., Murphy, M. J., Schaff, W. J., Eastman, L. F., Look, D. C., Molnar, R. J., Ponce, F., Ikeo, N. & Sakai, Y., May 8 2002, In : Applied Surface Science. 190, 1-4, p. 498-507 10 p.

Research output: Contribution to journalArticle

electron energy
Electrons
Ultrathin films
Surface analysis
Ultrahigh vacuum
57 Citations (Scopus)

Low Stokes shift in thick and homogeneous InGaN epilayers

Srinivasan, S., Bertram, F., Bell, A., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Jan 28 2002, In : Applied Physics Letters. 80, 4, p. 550-552 3 p.

Research output: Contribution to journalArticle

indium
shift
cathodoluminescence
homogeneity
light emission
5 Citations (Scopus)

Mg incorporation in AlGaN layers grown on grooved sapphire substrates

Cherns, D., Baines, M. Q., Wang, Y. Q., Liu, R., Ponce, F., Amano, H. & Akasaki, I., Dec 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 850-854 5 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Sapphire
sapphire
Substrates
Organic Chemicals
18 Citations (Scopus)

Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers

Bertram, F., Srinivasan, S., Geng, L., Ponce, F., Riemann, T. & Christen, J., May 13 2002, In : Applied Physics Letters. 80, 19, p. 3524-3526 3 p.

Research output: Contribution to journalArticle

surface defects
luminescence
defects
cathodoluminescence
craters
26 Citations (Scopus)

Microstructural properties of Eu-doped GaN luminescent powders

Contreras, O., Srinivasan, S., Ponce, F., Hirata, G. A., Ramos, F. & McKittrick, J., Sep 9 2002, In : Applied Physics Letters. 81, 11, p. 1993-1995 3 p.

Research output: Contribution to journalArticle

europium
cathodoluminescence
crystal defects
wurtzite
light emission
18 Citations (Scopus)

Migration of dislocations in strained GaN heteroepitaxial layers

Sahonta, S. L., Baines, M. Q., Cherns, D., Amano, H. & Ponce, F., Dec 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 952-955 4 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Dislocations (crystals)
Sapphire
Transmission electron microscopy
screws
21 Citations (Scopus)

Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N

Cherns, D., Wang, Y. Q., Liu, R. & Ponce, F., Dec 9 2002, In : Applied Physics Letters. 81, 24, p. 4541-4543 3 p.

Research output: Contribution to journalArticle

edge dislocations
hollow
transmission electron microscopy
thin films

Physica Status Solidi (B) Basic Research: Preface

Ulloa, S. E. & Ponce, F., 2002, In : Physica Status Solidi (B) Basic Research. 230, 2, p. 307 1 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Polarity determination by atomic location by channeling-enhanced microanalysis

Jiang, N., Eustis, T. J., Cai, J., Ponce, F., Spence, J. & Silcox, J., Jan 21 2002, In : Applied Physics Letters. 80, 3, p. 389-391 3 p.

Research output: Contribution to journalArticle

microanalysis
polarity
electron flux density
thin films
predictions
1 Citation (Scopus)

Response to: Comment on 'Low Stokes shift in thick and homogeneous InGaN epilayers'(Appl. Phys. Lett (2002) 81 1353))

Srinivasan, S., Bertram, F., Bell, A. & Ponce, F., Aug 12 2002, In : Applied Physics Letters. 81, 7, p. 1355-1356 2 p.

Research output: Contribution to journalArticle

shift
10 Citations (Scopus)

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence

Bertram, F., Srinivasan, S., Liu, R., Geng, L., Ponce, F., Riemann, T., Christen, J., Tanaka, S., Omiya, H. & Nakagawa, Y., May 30 2002, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 93, 1-3, p. 19-23 5 p.

Research output: Contribution to journalArticle

Indium
Cathodoluminescence
cathodoluminescence
indium
Luminescence
38 Citations (Scopus)

Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography

Cai, J. & Ponce, F., Jun 15 2002, In : Journal of Applied Physics. 91, 12, p. 9856-9862 7 p.

Research output: Contribution to journalArticle

holography
charge distribution
quantum wells
electrons
electric fields

Surface review and letters: Preface

Cota, L., Ponce, F. & Ulloa, S., Oct 2002, In : Surface Review and Letters. 9, 5-6

Research output: Contribution to journalArticle

12 Citations (Scopus)

The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

Novikov, S. V., Winser, A. J., Bell, A., Harrison, I., Li, T., Campion, R. P., Staddon, C. R., Davis, C. S., Ponce, F. & Foxon, C. T., May 2002, In : Journal of Crystal Growth. 240, 3-4, p. 423-430 8 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Thermodynamics
Plasmas
thermodynamics
2001
27 Citations (Scopus)

A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

Srinivasan, S., Liu, R., Bertram, F., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 41-44 4 p.

Research output: Contribution to journalArticle

Epilayers
Rutherford backscattering spectroscopy
Lattice constants
lattice parameters
backscattering
39 Citations (Scopus)

A New Combustion Synthesis Method for GaN: Eu3+ and Ga2O3:Eu3+ Luminescent Powders

Hirata, G. A., Ramos, F., Garcia, R., Bosze, E. J., Mckittrick, J., Contreras, O. & Ponce, F., Nov 2001, In : Physica Status Solidi (A) Applied Research. 188, 1, p. 179-182 4 p.

Research output: Contribution to journalArticle

combustion synthesis
Combustion synthesis
hydrazine
Powders
Hydrazine
6 Citations (Scopus)

Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well

Shi, L., Poweleit, C. D., Ponce, F., Menendez, J. & Chow, W. W., Jul 2 2001, In : Applied Physics Letters. 79, 1, p. 75-77 3 p.

Research output: Contribution to journalArticle

pinholes
quantum wells
photoluminescence
gradients
indium
200 Citations (Scopus)

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Cherns, D., Henley, S. J. & Ponce, F., Apr 30 2001, In : Applied Physics Letters. 78, 18, p. 2691-2693 3 p.

Research output: Contribution to journalArticle

screw dislocations
edge dislocations
cathodoluminescence
quantum wells
luminescence
3 Citations (Scopus)

Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces

Brillson, L. J., Young, A. P., Jessen, G. H., Levin, T. M., Bradley, S. T., Goss, S. H., Bae, J., Ponce, F., Murphy, M. J., Schaff, W. J. & Eastman, L. F., May 15 2001, In : Applied Surface Science. 175-176, p. 442-449 8 p.

Research output: Contribution to journalArticle

Luminescence
Spectroscopy
electron energy
luminescence
Electrons
7 Citations (Scopus)

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Henley, S. J., Bewick, A., Cherns, D. & Ponce, F., Sep 2001, In : Journal of Crystal Growth. 230, 3-4, p. 481-486 6 p.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Luminescence
quantum wells
luminescence
Defects
10 Citations (Scopus)

Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography

Cai, J., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 2001, In : Physica Status Solidi (A) Applied Research. 188, 2, p. 833-837 5 p.

Research output: Contribution to journalArticle

Electron holography
holography
Heterojunctions
Two dimensional electron gas
profiles
2 Citations (Scopus)

Spatially resolved cathodoluminescence study of As doped GaN

Bell, A., Ponce, F., Novikov, S. V., Foxon, C. T. & Harrison, I., Nov 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 207-211 5 p.

Research output: Contribution to journalArticle

Cathodoluminescence
Arsenic
cathodoluminescence
arsenic
Luminescence
16 Citations (Scopus)

Spatial variation of luminescence in thick GaN films

Bertram, F., Srinivasan, S., Ponce, F., Riemann, T., Christen, J. & Molnar, R. J., Feb 26 2001, In : Applied Physics Letters. 78, 9, p. 1222-1224 3 p.

Research output: Contribution to journalArticle

thick films
luminescence
cathodoluminescence
hydrides
homogeneity
11 Citations (Scopus)

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning catholuminescence

Bertram, F., Srinivasan, S., Geng, L., Ponce, F., Riemann, T., Christen, J., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 35-39 5 p.

Research output: Contribution to journalArticle

Indium
Cathodoluminescence
indium
Luminescence
cathodoluminescence
12 Citations (Scopus)

Surface Morphology of AlxGa1-xN Films Grown by MOCVD

Geng, L., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 2001, In : Physica Status Solidi (A) Applied Research. 188, 2, p. 803-806 4 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Surface morphology
Aluminum
pinholes
9 Citations (Scopus)

The nature of arsenic incorporation in GaN

Bell, A., Ponce, F., Novikov, S. V., Foxon, C. T. & Harrison, I., Nov 12 2001, In : Applied Physics Letters. 79, 20, p. 3239-3241 3 p.

Research output: Contribution to journalArticle

arsenic
carrier mobility
gallium
molecular beam epitaxy
mass spectroscopy
2000
7 Citations (Scopus)

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

Brillson, L. J., Young, A. P., Levin, T. M., Jessen, G. H., Schäfer, J., Yang, Y., Xu, S. H., Cruguel, H., Lapeyre, G. J., Ponce, F., Naoi, Y., Tu, C., McKenzie, J. D. & Abernathy, C. R., Jun 1 2000, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 75, 2-3, p. 218-223 6 p.

Research output: Contribution to journalArticle

Electronic states
Semiconductor quantum wells
quantum wells
Fermi level
Molecular beam epitaxy
50 Citations (Scopus)

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

McCartney, M., Ponce, F., Cai, J. & Bour, D. P., May 22 2000, In : Applied Physics Letters. 76, 21, p. 3055-3057 3 p.

Research output: Contribution to journalArticle

holography
diodes
electrostatics
profiles
p-n junctions
27 Citations (Scopus)

Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

Stirman, J. N., Ponce, F., Pavlovska, A., Tsong, I. S. T. & Smith, D., Feb 14 2000, In : Applied Physics Letters. 76, 7, p. 822-824 3 p.

Research output: Contribution to journalArticle

polarity
high resolution
electron microscopy
spacing
simulation
1999
24 Citations (Scopus)

Defect formation near GaN surfaces and interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H., Young, A. P., Tu, C., Naoi, Y., Ponce, F., Yang, Y., Lapeyre, G. J., MacKenzie, J. D. & Abernathy, C. R., Dec 15 1999, In : Physica B: Condensed Matter. 273-274, p. 70-74 5 p.

Research output: Contribution to journalArticle

Defects
Heterojunctions
defects
Metals
Phase interfaces
28 Citations (Scopus)
Semiconductor quantum wells
Luminescence
quantum wells
Spectroscopy
luminescence
35 Citations (Scopus)

Localized states at InGaN/GaN quantum well interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H. & Ponce, F., Dec 13 1999, In : Applied Physics Letters. 75, 24, p. 3835-3837 3 p.

Research output: Contribution to journalArticle

heterojunctions
quantum wells
electron energy
luminescence
defects
40 Citations (Scopus)

Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

Cherns, D., Barnard, J. & Ponce, F., Jul 2 1999, In : Solid State Communications. 111, 5, p. 281-285 5 p.

Research output: Contribution to journalArticle

Electron holography
Surface relaxation
Field emission
holography
Semiconductor quantum wells
1998
44 Citations (Scopus)

Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy

Cherns, D., Young, W. T., Saunders, M., Steeds, J. W., Ponce, F. & Nakamura, S., Jan 1998, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 77, 1, p. 273-286 14 p.

Research output: Contribution to journalArticle

Organic Chemicals
Aluminum Oxide
Organic chemicals
Sapphire
Electron diffraction
1997
36 Citations (Scopus)

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

Cherns, D., Young, W. T. & Ponce, F., Dec 18 1997, In : Materials Science and Engineering B. 50, 1-3, p. 76-81 6 p.

Research output: Contribution to journalArticle

Burgers vector
Aluminum Oxide
Sapphire
Electron diffraction
inversions
163 Citations (Scopus)

Defects and interfaces in GaN epitaxy

Ponce, F., Feb 1997, In : MRS Bulletin. 22, 2, p. 51-57 7 p.

Research output: Contribution to journalArticle

Epitaxial growth
Defects
177 Citations (Scopus)

Nitride-based semiconductors for blue and green light-emitting devices

Ponce, F. & Bour, D. P., Jan 1 1997, In : Nature. 386, 6623

Research output: Contribution to journalArticle

solid state devices
flat panel displays
optical density
data storage
ultraviolet lasers
1157 Citations (Scopus)

Nitride-based semiconductors for blue and green light-emitting devices

Ponce, F. & Bour, D. P., Mar 27 1997, In : Nature. 386, 6623, p. 351-359 9 p.

Research output: Contribution to journalArticle

nitrides
solid state devices
flat panel displays
optical density
data storage
86 Citations (Scopus)

Observation of coreless dislocations in α-GaN

Cherns, D., Young, W. T., Steeds, J. W., Ponce, F. & Nakamura, S., Jun 1997, In : Journal of Crystal Growth. 178, 1-2, p. 201-206 6 p.

Research output: Contribution to journalArticle

Burgers vector
Screw dislocations
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
1996
9 Citations (Scopus)

Applications of electron microscopy in collaborative industrial research

Ross, F. M., Krishnan, K. M., Thangaraj, N., Farrow, R. F. C., Marks, R. F., Cebollada, A., Parkin, S. S. P., Toney, M. F., Huffman, M., Paz De Araujo, C. A., McMillan, L. D., Cuchiaro, J., Scott, M. C., Echer, C., Ponce, F., O'Keefe, M. A. & Nelson, E. G., May 1996, In : MRS Bulletin. 21, 5, p. 17-23 7 p.

Research output: Contribution to journalArticle

Semiconducting aluminum compounds
Strontium compounds
strontium compounds
Industrial research
ferroelectric materials
68 Citations (Scopus)

Atomic arrangement at the AlN/SiC interface

Ponce, F., Van De Walle, C. G. & Northrup, J. E., Mar 15 1996, In : Physical Review B - Condensed Matter and Materials Physics. 53, 11, p. 7473-7478 6 p.

Research output: Contribution to journalArticle

High resolution transmission electron microscopy
image contrast
configurations
transmission electron microscopy
high resolution
173 Citations (Scopus)

Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

Ponce, F., Cherns, D., Young, W. T. & Steeds, J. W., Aug 5 1996, In : Applied Physics Letters. 69, 6, p. 770-772 3 p.

Research output: Contribution to journalArticle

electron microscopy
electron diffraction
diffraction
crystal defects
imaging techniques
228 Citations (Scopus)

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

Ponce, F., Bour, D. P., Young, W. T., Saunders, M. & Steeds, J. W., Jul 15 1996, In : Applied Physics Letters. 69, 3, p. 337-339 3 p.

Research output: Contribution to journalArticle

flat surfaces
polarity
single crystals
sapphire
epitaxy