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1976 …2021
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Research Output 1976 2019

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2008
8 Citations (Scopus)

Photoluminescence of near-lattice-matched GaNAlInN quantum wells grown on free-standing GaN and on sapphire substrates

Tan, L. T., Martin, R. W., O'Donnell, K. P., Watson, I. M., Wu, Z. H. & Ponce, F., 2008, In : Applied Physics Letters. 92, 3, 031907.

Research output: Contribution to journalArticle

sapphire
quantum wells
photoluminescence
excitation
screening
24 Citations (Scopus)

Role of the buffer layer thickness on the formation of basal plane stacking faults in a -plane GaN epitaxy on r -sapphire

Wu, Z. H., Fischer, A. M., Ponce, F., Yokogawa, T., Yoshida, S. & Kato, R., 2008, In : Applied Physics Letters. 93, 1, 011901.

Research output: Contribution to journalArticle

crystal defects
epitaxy
sapphire
buffers
luminescence
3 Citations (Scopus)

SEM characterization of silicon nanostructures: Can we meet the challenge?

Myhajlenko, S., Luby, A. S., Fischer, A. M., Ponce, F. & Tracy, C., Jul 2008, In : Scanning. 30, 4, p. 310-316 7 p.

Research output: Contribution to journalArticle

Cathodoluminescence
cathodoluminescence
Nanostructures
Electron microscopes
Visualization
59 Citations (Scopus)

Structural and optical properties of nonpolar GaN thin films

Wu, Z. H., Fischer, A. M., Ponce, F., Bastek, B., Christen, J., Wernicke, T., Weyers, M. & Kneissl, M., 2008, In : Applied Physics Letters. 92, 17, 171904.

Research output: Contribution to journalArticle

optical properties
crystal defects
sapphire
masks
thin films
5 Citations (Scopus)

Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

Liu, J., Ryou, J. H., Lochner, Z., Limb, J., Yoo, D., Dupuis, R. D., Wu, Z., Fischer, A. M. & Ponce, F., Nov 15 2008, In : Journal of Crystal Growth. 310, 23, p. 5166-5169 4 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Surface morphology
Light emitting diodes
light emitting diodes
57 Citations (Scopus)

Synthesis and luminescence properties of ZnO nanostructures produced by the sol-gel method

Li, J., Srinivasan, S., He, G. N., Kang, J. Y., Wu, S. T. & Ponce, F., Feb 1 2008, In : Journal of Crystal Growth. 310, 3, p. 599-603 5 p.

Research output: Contribution to journalArticle

Sol-gel process
Luminescence
Nanostructures
rods
Platelets
15 Citations (Scopus)

Time-resolved cathodoluminescence of Mg-doped GaN

Fischer, A. M., Srinivasan, S., Ponce, F., Monemar, B., Bertram, F. & Christen, J., 2008, In : Applied Physics Letters. 93, 15, 151901.

Research output: Contribution to journalArticle

cathodoluminescence
replicas
magnesium
excitons
luminescence
2007
3 Citations (Scopus)

AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route

Garcia, R., Srinivasan, S., Contreras, O. E., Thomas, A. C. & Ponce, F., Oct 1 2007, In : Journal of Crystal Growth. 308, 1, p. 198-203 6 p.

Research output: Contribution to journalArticle

Nanocrystalline powders
Gallium
Aluminum
Ammonia
gallium
11 Citations (Scopus)

Atomic force nanolithography of InP for site control growth of InAs nanostructures

Fonseca-Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L. & Ponce, F., 2007, In : Applied Physics Letters. 90, 1, 013117.

Research output: Contribution to journalArticle

nanoindentation
vapor phase epitaxy
nucleation
defects
geometry
10 Citations (Scopus)

Basal-plane slip in InGaNGaN heterostructures in the presence of threading dislocations

Mei, J., Liu, R., Ponce, F., Omiya, H. & Mukai, T., 2007, In : Applied Physics Letters. 90, 17, 171922.

Research output: Contribution to journalArticle

slip
mesas
indium
ledges
propagation
18 Citations (Scopus)

Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells

Brooksby, J. C., Mei, J. & Ponce, F., 2007, In : Applied Physics Letters. 90, 23, 231901.

Research output: Contribution to journalArticle

quantum wells
luminescence
microstructure
cathodoluminescence
sapphire
10 Citations (Scopus)

Determination of the electronic band structure for a graded modulation-doped AlGaNAlNGaN superlattice

Wu, Z. H., Ponce, F., Hertkorn, J. & Scholz, F., 2007, In : Applied Physics Letters. 91, 14, 142121.

Research output: Contribution to journalArticle

modulation
barrier layers
profiles
electronics
holography
20 Citations (Scopus)

Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

Mei, J., Ponce, F., Fareed, R. S. Q., Yang, J. W. & Khan, M. A., 2007, In : Applied Physics Letters. 90, 22, 221909.

Research output: Contribution to journalArticle

aluminum nitrides
epitaxy
coalescing
sapphire
edge dislocations
24 Citations (Scopus)

Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes

Wu, Z. H., Fischer, A. M., Ponce, F., Lee, W., Ryou, J. H., Limb, J., Yoo, D. & Dupuis, R. D., 2007, In : Applied Physics Letters. 91, 4, 041915.

Research output: Contribution to journalArticle

light emitting diodes
quantum wells
electric fields
hydrogen ions
cathodoluminescence
7 Citations (Scopus)

Growth of InAs nanostructures on InP using atomic-force nanolithography

Fonseca Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L. & Ponce, F., Dec 2007, In : Applied Physics A: Materials Science and Processing. 89, 4, p. 945-949 5 p.

Research output: Contribution to journalArticle

Nanolithography
Nanostructures
nucleation
nanoindentation
Nucleation
22 Citations (Scopus)

Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography

Wu, Z. H., Stevens, M., Ponce, F., Lee, W., Ryou, J. H., Yoo, D. & Dupuis, R. D., 2007, In : Applied Physics Letters. 90, 3, 032101.

Research output: Contribution to journalArticle

holography
electrostatics
electrons
charge distribution
electron gas
17 Citations (Scopus)

Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire

Fareed, Q., Adivarahan, V., Gaevski, M., Katona, T., Mei, J., Ponce, F. & Khan, A., Aug 10 2007, In : Japanese Journal of Applied Physics, Part 2: Letters. 46, 29-32

Research output: Contribution to journalArticle

Vapor phase epitaxy
Sapphire
Hydrides
vapor phase epitaxy
hydrides
22 Citations (Scopus)

Optical properties of highly luminescent zinc oxide tetrapod powders

Fischer, A. M., Srinivasan, S., Garcia, R., Ponce, F., Guao, S. E., Di Lello, B. C., Moura, F. J. & Solórzano, I. G., 2007, In : Applied Physics Letters. 91, 12, 121905.

Research output: Contribution to journalArticle

cathodoluminescence
zinc oxides
optical properties
zinc
evaporation
8 Citations (Scopus)

Synthesis of highly luminescent, undoped, Mg-doped and Si-doped GaN powders

Garcia, R., Bell, A., Thomas, A. C. & Ponce, F., Jun 1 2007, In : Journal of Crystal Growth. 304, 1, p. 225-232 8 p.

Research output: Contribution to journalArticle

Crystallites
Powders
crystallites
Silicon
Ammonia
2006
9 Citations (Scopus)

Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes

Srinivasan, S., Stevens, M., Ponce, F., Omiya, H. & Mukai, T., 2006, In : Applied Physics Letters. 89, 23, 231908.

Research output: Contribution to journalArticle

quantum wells
electrostatics
carrier lifetime
geometry
cathodoluminescence
52 Citations (Scopus)

Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures

Liu, R., Mei, J., Srinivasan, S., Ponce, F., Omiya, H., Narukawa, Y. & Mukai, T., 2006, In : Applied Physics Letters. 89, 20, 201911.

Research output: Contribution to journalArticle

slip
critical loading
indium
interactions
energy
31 Citations (Scopus)

Misfit dislocation generation in InGaN epilayers on free-standing GaN

Liu, R., Mei, J., Srinivasan, S., Omiya, H., Ponce, F., Cherns, D., Narukawa, Y. & Mukai, T., Jun 2 2006, In : Japanese Journal of Applied Physics, Part 2: Letters. 45, 20-23

Research output: Contribution to journalArticle

Epilayers
Dislocations (crystals)
Burgers vector
Defects
defects
69 Citations (Scopus)

Prismatic stacking faults in epitaxially laterally overgrown GaN

Mei, J., Srinivasan, S., Liu, R., Ponce, F., Narukawa, Y. & Mukai, T., Apr 3 2006, In : Applied Physics Letters. 88, 14, 141912.

Research output: Contribution to journalArticle

crystal defects
cathodoluminescence
light emission
flat surfaces
electron microscopy
64 Citations (Scopus)

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Chen, Z., Qhalid Fareed, R. S., Gaevski, M., Adivarahan, V., Yang, J. W., Khan, A., Mei, J. & Ponce, F., 2006, In : Applied Physics Letters. 89, 8, 081905.

Research output: Contribution to journalArticle

aluminum nitrides
sapphire
cathodoluminescence
wings
coalescing
11 Citations (Scopus)

Structure and luminescence of nanocrystalline gallium nitride synthesized by a novel polymer pyrolysis route

Garcia, R., Hirata, G. A., Thomas, A. C. & Ponce, F., Oct 2006, In : Optical Materials. 29, 1, p. 19-23 5 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
Powders
pyrolysis
Luminescence
2005

CBED study of grain misorientations in AlGaN epilayers

Sahonta, S. L., Cherns, D., Liu, R., Ponce, F., Amano, H. & Akasaki, I., Apr 2005, In : Ultramicroscopy. 103, 1, p. 23-32 10 p.

Research output: Contribution to journalArticle

Epilayers
misalignment
wings
Electron diffraction
Seed
2 Citations (Scopus)

Epitaxial growth of ZrB 2(0001) on Si(111) for III-nitride applications: A review

Tolle, J., Kouvetakis, J., Kim, D. W., Mahajan, S., Chizmeshya, A., Hu, C. W., Bell, A., Ponce, F. & Tsong, I. S. T., Feb 2005, In : Chinese Journal of Physics. 43, 1 II, p. 233-248 16 p.

Research output: Contribution to journalArticle

nitrides
nucleation
epitaxy
thermal decomposition
metalorganic chemical vapor deposition
44 Citations (Scopus)

Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

Sun, W. H., Zhang, J. P., Yang, J. W., Maruska, H. P., Khan, M. A., Liu, R. & Ponce, F., 2005, In : Applied Physics Letters. 87, 21, p. 1-3 3 p., 211915.

Research output: Contribution to journalArticle

atomic layer epitaxy
fine structure
high resolution
screws
periodic variations
15 Citations (Scopus)

Growth of InN on Ge substrate by molecular beam epitaxy

Trybus, E., Namkoong, G., Henderson, W., Doolittle, W. A., Liu, R., Mei, J., Ponce, F., Cheung, M., Chen, F., Furis, M. & Cartwright, A., Jun 1 2005, In : Journal of Crystal Growth. 279, 3-4, p. 311-315 5 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Germanium
Transmission electron microscopy
transmission electron microscopy
312 Citations (Scopus)

Luminescence from stacking faults in gallium nitride

Liu, R., Bell, A., Ponce, F., Chen, C. Q., Yang, J. W. & Khan, M. A., Jan 10 2005, In : Applied Physics Letters. 86, 2, 021908.

Research output: Contribution to journalArticle

gallium nitrides
crystal defects
luminescence
cathodoluminescence
light emission
24 Citations (Scopus)

Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si

Myhajlenko, S., Bell, A., Ponce, F., Edwards, J. L., Wei, Y., Craigo, B., Convey, D., Li, H., Liu, R. & Kulik, J., Jan 1 2005, In : Journal of Applied Physics. 97, 1, 014101.

Research output: Contribution to journalArticle

cathodoluminescence
microstructure
transmission electron microscopy
striation
defects
44 Citations (Scopus)

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

Srinivasan, S., Stevens, M., Ponce, F. & Mukai, T., Sep 26 2005, In : Applied Physics Letters. 87, 13, p. 1-3 3 p., 131911.

Research output: Contribution to journalArticle

light emission
flat surfaces
quantum wells
cathodoluminescence
visible spectrum
2004
30 Citations (Scopus)

Atomic arrangement at the Au/p-GaN interface in low-resistance contacts

Omiya, H., Ponce, F., Marui, H., Tanaka, S. & Mukai, T., Dec 20 2004, In : Applied Physics Letters. 85, 25, p. 6143-6145 3 p.

Research output: Contribution to journalArticle

low resistance
transmission electron microscopy
platelets
annealing
high resolution

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

Amano, H., Miyazaki, A., Iida, K., Kawashima, T., Iwaya, M., Kamiyama, S., Akasaki, I., Liu, R., Bell, A., Ponce, F., Sahonta, S. & Cherns, D., Sep 2004, In : Physica Status Solidi (A) Applied Research. 201, 12, p. 2679-2685 7 p.

Research output: Contribution to journalArticle

Ultraviolet radiation
Ultraviolet devices
emitters
Diodes
light emitting diodes
26 Citations (Scopus)

Effect of layer thickness on the electrostatic potential in InGaN quantum wells

Stevens, M., Bell, A., McCartney, M., Ponce, F., Marui, H. & Tanaka, S., Nov 15 2004, In : Applied Physics Letters. 85, 20, p. 4651-4653 3 p.

Research output: Contribution to journalArticle

holography
field strength
quantum wells
electrostatics
indium
22 Citations (Scopus)

Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer

Tolle, J., Kouvetakis, J., Kim, D. W., Mahajan, S., Bell, A., Ponce, F., Tsong, I. S. T., Kottke, M. L. & Chen, Z. D., May 3 2004, In : Applied Physics Letters. 84, 18, p. 3510-3512 3 p.

Research output: Contribution to journalArticle

buffers
vapor deposition
sapphire
temperature
124 Citations (Scopus)

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

Bell, A., Srinivasan, S., Plumlee, C., Omiya, H., Ponce, F., Christen, J., Tanaka, S., Fujioka, A. & Nakagawa, Y., May 1 2004, In : Journal of Applied Physics. 95, 9, p. 4670-4674 5 p.

Research output: Contribution to journalArticle

excitons
temperature dependence
cathodoluminescence
luminescence
shift
31 Citations (Scopus)

Localization versus field effects in single InGaN quantum wells

Bell, A., Christen, J., Bertram, F., Ponce, F., Marui, H. & Tanaka, S., Jan 5 2004, In : Applied Physics Letters. 84, 1, p. 58-60 3 p.

Research output: Contribution to journalArticle

quantum wells
quasi-steady states
Stark effect
cathodoluminescence
pulses
4 Citations (Scopus)

Nitrogen surfactant effects in GaInP

Chapman, D. C., Stringfellow, G. B., Bell, A., Ponce, F., Lee, J. W., Seong, T. Y., Shibakawa, S. & Sasaki, A., Dec 15 2004, In : Journal of Applied Physics. 96, 12, p. 7229-7234 6 p., 6.

Research output: Contribution to journalArticle

pyramids
cathodoluminescence
surfactants
nitrogen
photoluminescence
15 Citations (Scopus)

Raman line shape of the A 1 longitudinal optical phonon in GaN

Shi, L., Ponce, F. & Menendez, J., May 3 2004, In : Applied Physics Letters. 84, 18, p. 3471-3473 3 p.

Research output: Contribution to journalArticle

line shape
optics
high resolution
13 Citations (Scopus)

Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

Bell, A., Liu, R., Parasuraman, U. K., Ponce, F., Kamiyama, S., Amano, H. & Akasaki, I., Oct 18 2004, In : Applied Physics Letters. 85, 16, p. 3417-3419 3 p.

Research output: Contribution to journalArticle

flat surfaces
luminescence
aluminum
cathodoluminescence
slip
9 Citations (Scopus)

The generation of misfit dislocations in facet-controlled growth of AlGaNGaN films

Cherns, D., Sahonta, S. L., Liu, R., Ponce, F., Amano, H. & Akasaki, I., Nov 2004, In : Applied Physics Letters. 85, 21, p. 4923-4925 3 p.

Research output: Contribution to journalArticle

flat surfaces
stress relieving
tensile stress
wings
shear stress
2003
104 Citations (Scopus)

Atomic arrangement at the AIN/Si (111) interface

Liu, R., Ponce, F., Dadgar, A. & Krost, A., Aug 4 2003, In : Applied Physics Letters. 83, 5, p. 860-862 3 p.

Research output: Contribution to journalArticle

electron microscopy
high resolution
95 Citations (Scopus)

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Contreras, O., Ponce, F., Christen, J., Dadgar, A. & Krost, A., Dec 16 2003, In : Applied Physics Letters. 81, 25, p. 4712-4714 3 p.

Research output: Contribution to journalArticle

epitaxy
silicon
transmission electron microscopy
27 Citations (Scopus)

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Tomida, Y., Nitta, S., Kamiyama, S., Amano, H., Akasaki, I., Otani, S., Kinoshita, H., Liu, R., Bell, A. & Ponce, F., Jun 30 2003, In : Applied Surface Science. 216, 1-4 SPEC., p. 502-507 6 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
vapor phase epitaxy
Metals
Substrates
metals
69 Citations (Scopus)

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

Bell, A., Liu, R., Ponce, F., Amano, H., Akasaki, I. & Cherns, D., Jan 20 2003, In : Applied Physics Letters. 82, 3, p. 349-351 3 p.

Research output: Contribution to journalArticle

light emission
sapphire
microstructure
defects
surface properties
12 Citations (Scopus)

Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

Tsuda, M., Watanabe, K., Kamiyama, S., Amano, H., Akasaki, I., Liu, R., Bell, A. & Ponce, F., Jun 30 2003, In : Applied Surface Science. 216, 1-4 SPEC., p. 585-589 5 p.

Research output: Contribution to journalArticle

Gallium nitride
Metallorganic vapor phase epitaxy
Aluminum Oxide
gallium nitrides
Sapphire
115 Citations (Scopus)

Microstructure and electronic properties of InGaN alloys

Ponce, F., Srinivasan, S., Bell, A., Geng, L., Liu, R., Stevens, M., Cai, J., Omiya, H., Marui, H. & Tanaka, S., Nov 2003, In : Physica Status Solidi (B) Basic Research. 240, 2, p. 273-284 12 p.

Research output: Contribution to journalArticle

Electronic properties
Indium
Semiconductor quantum wells
microstructure
Microstructure
117 Citations (Scopus)

MOVPE growth of GaN on Si(1 1 1) substrates

Dadgar, A., Poschenrieder, M., Bläsing, J., Contreras, O., Bertram, F., Riemann, T., Reiher, A., Kunze, M., Daumiller, I., Krtschil, A., Diez, A., Kaluza, A., Modlich, A., Kamp, M., Christen, J., Ponce, F., Kohn, E. & Krost, A., Feb 2003, In : Journal of Crystal Growth. 248, SUPPL., p. 556-562 7 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
cracks
Cracks
interlayers
Substrates
157 Citations (Scopus)

Slip systems and misfit dislocations in InGaN epilayers

Srinivasan, S., Geng, L., Liu, R., Ponce, F., Narukawa, Y. & Tanaka, S., Dec 22 2003, In : Applied Physics Letters. 83, 25, p. 5187-5189 3 p.

Research output: Contribution to journalArticle

slip
cathodoluminescence
wurtzite
light emission
sapphire