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Research Output 1976 2019

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2013
55 Citations (Scopus)

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Lochner, Z., Kao, T. T., Liu, Y. S., Li, X. H., Mahbub Satter, M., Shen, S. C., Douglas Yoder, P., Ryou, J. H., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A. & Ponce, F., Mar 11 2013, In : Applied Physics Letters. 102, 10, 101110.

Research output: Contribution to journalArticle

lasing
optical pumping
stimulated emission
excimer lasers
metalorganic chemical vapor deposition
22 Citations (Scopus)

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

Fischer, A. M., Wei, Y. O., Ponce, F., Moseley, M., Gunning, B. & Doolittle, W. A., Sep 23 2013, In : Applied Physics Letters. 103, 13, 131101.

Research output: Contribution to journalArticle

indium
crystal defects
metals
epitaxy
nitrides
9 Citations (Scopus)

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Juday, R., Fischer, A. M., Huang, Y., Huang, J. Y., Kim, H. J., Ryou, J. H., Dupuis, R. D., Bour, D. P. & Ponce, F., Aug 19 2013, In : Applied Physics Letters. 103, 8, 082103.

Research output: Contribution to journalArticle

excitons
hydrogen
cathodoluminescence
liquid helium
metalorganic chemical vapor deposition
2 Citations (Scopus)

Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs

Kim, J., Ji, M. H., Lochner, Z., Choi, S., Sebkhi, N., Liu, J., Satter, M. M., Kim, J. S., Yoder, P. D., Dupuis, R. D., Juday, R., Fischer, A. M., Ponce, F. & Ryou, J. H., 2013, In : IEEE Photonics Technology Letters. 25, 18, p. 1789-1792 4 p., 6572864.

Research output: Contribution to journalArticle

Indium
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
1 Citation (Scopus)

Indium nitride and indium gallium nitride layers grown on nanorods

Webster, R. F., Cherns, D., Goff, L. E., Novikov, S. V., Foxon, C. T., Fischer, A. M. & Ponce, F., 2013, In : Journal of Physics: Conference Series. 471, 1, 012025.

Research output: Contribution to journalArticle

gallium nitrides
nanorods
nitrides
indium
coalescing
7 Citations (Scopus)

Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

Lochner, Z., Li, X. H., Kao, T. T., Satter, M. M., Kim, H. J., Shen, S. C., Yoder, P. D., Ryou, J. H., Dupuis, R. D., Sun, K., Wei, Y., Li, T., Fischer, A. & Ponce, F., Sep 2013, In : Physica Status Solidi (A) Applications and Materials Science. 210, 9, p. 1768-1770 3 p.

Research output: Contribution to journalArticle

Stimulated emission
stimulated emission
Heterojunctions
Substrates
injection
9 Citations (Scopus)

Strain-related optical properties of ZnO crystals due to nanoindentation on various surface orientations

Juday, R., Silva, E. M., Huang, J. Y., Caldas, P. G., Prioli, R. & Ponce, F., May 14 2013, In : Journal of Applied Physics. 113, 18, 183511.

Research output: Contribution to journalArticle

nanoindentation
optical properties
indentation
crystals
defects
24 Citations (Scopus)

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Kao, T. T., Liu, Y. S., Mahbub Satter, M., Li, X. H., Lochner, Z., Douglas Yoder, P., Detchprohm, T., Dupuis, R. D., Shen, S. C., Ryou, J. H., Fischer, A. M., Wei, Y., Xie, H. & Ponce, F., Nov 18 2013, In : Applied Physics Letters. 103, 21, 211103.

Research output: Contribution to journalArticle

mirrors
thresholds
radiant flux density
pumping
lasers
18 Citations (Scopus)

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Li, T., Wei, Q. Y., Fischer, A. M., Huang, J. Y., Huang, Y. U., Ponce, F., Liu, J. P., Lochner, Z., Ryou, J. H. & Dupuis, R. D., Jan 28 2013, In : Applied Physics Letters. 102, 4, 041115.

Research output: Contribution to journalArticle

quantum wells
optical properties
electronics
carrier injection
holography
4 Citations (Scopus)

The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals

Huang, J. Y., Ponce, F., Caldas, P. G., Prioli, R. & Almeida, C. M., Nov 28 2013, In : Journal of Applied Physics. 114, 20, 203503.

Research output: Contribution to journalArticle

plastic deformation
crystals
propagation
crystal lattices
locking
2 Citations (Scopus)

The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays

Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M. & Ponce, F., 2013, In : Journal of Crystal Growth. 384, p. 55-60 6 p.

Research output: Contribution to journalArticle

Nanorods
nanorods
Cathodoluminescence
cathodoluminescence
Molecular beam epitaxy
2012
22 Citations (Scopus)

Compositional instability in InAlN/GaN lattice-matched epitaxy

Wei, Q. Y., Li, T., Huang, Y., Huang, J. Y., Chen, Z. T., Egawa, T. & Ponce, F., Feb 27 2012, In : Applied Physics Letters. 100, 9, 092101.

Research output: Contribution to journalArticle

V grooves
epitaxy
breakdown
screws
homogeneity
6 Citations (Scopus)

Correlated structural, electronic, and optical properties of AlN/GaN multiple quantum disks in GaN nanowires

Fischer, A. M., Sun, K. W., Ponce, F., Songmuang, R. & Monroy, E., Feb 2012, In : Applied Physics Express. 5, 2, 025001.

Research output: Contribution to journalArticle

Electron holography
Conduction bands
Electronic properties
Band structure
Nanowires
4 Citations (Scopus)

Early stages of mechanical deformation in indium phosphide with the zinc blende structure

Almeida, C. M., Prioli, R., Wei, Q. Y. & Ponce, F., Sep 15 2012, In : Journal of Applied Physics. 112, 6, 063514.

Research output: Contribution to journalArticle

indium phosphides
indentation
zinc
piles
nanoindentation
70 Citations (Scopus)

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Choi, S., Ji, M. H., Kim, J., Jin Kim, H., Satter, M. M., Yoder, P. D., Ryou, J. H., Dupuis, R. D., Fischer, A. M. & Ponce, F., Oct 15 2012, In : Applied Physics Letters. 101, 16, 161110.

Research output: Contribution to journalArticle

nitrides
light emitting diodes
injection
electrons
power efficiency
10 Citations (Scopus)

Free carrier accumulation at cubic AlGaN/GaN heterojunctions

Wei, Q. Y., Li, T., Huang, J. Y., Ponce, F., Tschumak, E., Zado, A. & As, D. J., Apr 2 2012, In : Applied Physics Letters. 100, 14, 142108.

Research output: Contribution to journalArticle

heterojunctions
holography
electrons
profiles
cathodoluminescence
2011
19 Citations (Scopus)

Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

Wang, B., Bliss, D., Suscavage, M., Swider, S., Lancto, R., Lynch, C., Weyburne, D., Li, T. & Ponce, F., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 1030-1033 4 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
Hydrides
vapor phase epitaxy
hydrides
Seed
12 Citations (Scopus)

Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells

Huang, Y., Sun, K. W., Fischer, A. M., Wei, Q. Y., Juday, R., Ponce, F., Kato, R. & Yokogawa, T., Jun 27 2011, In : Applied Physics Letters. 98, 26, 261914.

Research output: Contribution to journalArticle

quantum wells
luminescence
spatial distribution
light emitting diodes
optical properties
7 Citations (Scopus)
holography
nitrides
electron beams
electrostatics
profiles
7 Citations (Scopus)

High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Sun, Y. Q., Wu, Z. H., Yin, J., Fang, Y. Y., Wang, H., Yu, C. H., Hui, X., Chen, C. Q., Wei, Q. Y., Li, T., Sun, K. W. & Ponce, F., Feb 1 2011, In : Thin Solid Films. 519, 8, p. 2508-2512 5 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Sapphire
Cones
cones
sapphire
4 Citations (Scopus)

Microstructure and polarization fields in nitride semiconductors

Ponce, F., 2011, In : Journal of Physics: Conference Series. 326, 1, 012001.

Research output: Contribution to journalArticle

nitrides
microstructure
electron beams
polarization
wurtzite

Microstructure of nanoscratched semiconductors

Huang, J. Y., Ponce, F., Caldas, P. G., Almeida, C. M. & Prioli, R., 2011, In : Journal of Physics: Conference Series. 326, 1, 012061.

Research output: Contribution to journalArticle

microstructure
slip
plastic flow
microscopes
screws
21 Citations (Scopus)

Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

Huang, Y., Ryou, J. H., Dupuis, R. D., Pflgl, C., Capasso, F., Sun, K., Fischer, A. M. & Ponce, F., Feb 1 2011, In : Journal of Crystal Growth. 316, 1, p. 75-80 6 p.

Research output: Contribution to journalArticle

Quantum cascade lasers
Metallorganic chemical vapor deposition
quantum cascade lasers
metalorganic chemical vapor deposition
Threshold current density
5 Citations (Scopus)

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Liu, J., Zhang, Y., Lochner, Z., Kim, S. S., Kim, H., Ryou, J. H., Shen, S. C., Doug Yoder, P., Dupuis, R. D., Wei, Q. Y., Sun, K. W., Fischer, A. M. & Ponce, F., Jan 15 2011, In : Journal of Crystal Growth. 315, 1, p. 272-277 6 p.

Research output: Contribution to journalArticle

Semiconductor lasers
semiconductor lasers
Electrons
electrons
Threshold current density
5 Citations (Scopus)

Plastic hardening in cubic semiconductors by nanoscratching

Caldas, P. G., Prioli, R., Almeida, C. M., Huang, J. Y. & Ponce, F., Jan 1 2011, In : Journal of Applied Physics. 109, 1, 013502.

Research output: Contribution to journalArticle

hardening
plastics
atomic force microscopy
plastic flow
plastic deformation
3 Citations (Scopus)

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Wu, Z. H., Sun, Y. Q., Yin, J., Fang, Y. Y., Dai, J. N., Chen, C. Q., Wei, Q. Y., Li, T., Sun, K. W., Fischer, A. M. & Ponce, F., 2011, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29, 2, 021005.

Research output: Contribution to journalArticle

Gallium nitride
Aluminum Oxide
gallium nitrides
hemispheres
Epitaxial growth
13 Citations (Scopus)

Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy

Oshima, R., Huang, J. Y., Miyashita, N., Matsubara, K., Okada, Y. & Ponce, F., Nov 7 2011, In : Applied Physics Letters. 99, 19, 191907.

Research output: Contribution to journalArticle

molecular beam epitaxy
antimony
transmission electron microscopy
hydrogen
thin films
2010
49 Citations (Scopus)

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

Li, T., Fischer, A. M., Wei, Q. Y., Ponce, F., Detchprohm, T. & Wetzel, C., 2010, In : Applied Physics Letters. 96, 3, 031906.

Research output: Contribution to journalArticle

quantum efficiency
quantum wells
radiative recombination
cathodoluminescence
visible spectrum
6 Citations (Scopus)

Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes

Fischer, A. M., Sun, K. W., Juday, R., Ponce, F., Ryou, J. H., Kim, H. J., Choi, S., Kim, S. S. & Dupuis, R. D., Mar 2010, In : Applied Physics Express. 3, 3, 031003.

Research output: Contribution to journalArticle

Growth temperature
Semiconductor quantum wells
Diodes
diodes
Electrons
4 Citations (Scopus)

Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

Fonseca-Filho, H. D., Almeida, C. M., Prioli, R., Pires, M. P., Souza, P. L., Wu, Z. H., Wei, Q. Y. & Ponce, F., 2010, In : Journal of Applied Physics. 107, 5, 054313.

Research output: Contribution to journalArticle

nanocrystals
nucleation
linear arrays
vapor phase epitaxy
crystal defects
165 Citations (Scopus)

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Choi, S., Kim, H. J., Kim, S. S., Liu, J., Kim, J., Ryou, J. H., Dupuis, R. D., Fischer, A. M. & Ponce, F., May 31 2010, In : Applied Physics Letters. 96, 22, 221105.

Research output: Contribution to journalArticle

nitrides
quantum efficiency
light emitting diodes
N electrons
electrons
75 Citations (Scopus)

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Kim, H. J., Choi, S., Kim, S. S., Ryou, J. H., Yoder, P. D., Dupuis, R. D., Fischer, A. M., Sun, K. & Ponce, F., 2010, In : Applied Physics Letters. 96, 10, 101102.

Research output: Contribution to journalArticle

quantum efficiency
light emitting diodes
electrons
electroluminescence
damage
16 Citations (Scopus)

In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation

Wei, Q. Y., Li, T., Wu, Z. H. & Ponce, F., Oct 2010, In : Physica Status Solidi (A) Applications and Materials Science. 207, 10, p. 2226-2232 7 p.

Research output: Contribution to journalArticle

Crystal orientation
Heterojunctions
Polarization
polarization
crystals
5 Citations (Scopus)

Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

Wu, Z. H., Sun, K. W., Wei, Q. Y., Fischer, A. M., Ponce, F., Kawai, Y., Iwaya, M., Kamiyama, S., Amano, H. & Akasaki, I., 2010, In : Applied Physics Letters. 96, 7, 071909.

Research output: Contribution to journalArticle

epitaxy
indium
crystal defects
engineers
microstructure

Physica Status Solidi C: Preface

Briot, O., Hoffmann, A., Nanishi, Y. & Ponce, F., 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 1, p. 7-8 2 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Polarization effects in 2-DEG and basic solid state physics 2-DHG AlGaN/AlN/GaN multi-heterostructures measured by electron holography

Wei, Q. Y., Wu, Z. H., Ponce, F., Hertkorn, J. & Scholz, F., Jul 2010, In : Physica Status Solidi (B) Basic Research. 247, 7, p. 1722-1724 3 p.

Research output: Contribution to journalArticle

Electron holography
Solid state physics
solid state physics
holography
Heterojunctions
8 Citations (Scopus)

Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Wu, Z., Nonaka, K., Kawai, Y., Asai, T., Ponce, F., Chen, C., Iwaya, M., Kamiyama, S., Amano, H. & Akasaki, I., Nov 2010, In : Applied Physics Express. 3, 11, 111003.

Research output: Contribution to journalArticle

Strain relaxation
Burgers vector
Dislocations (crystals)
Epitaxial growth
epitaxy
2009
19 Citations (Scopus)

Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers

Dai, J. N., Wu, Z. H., Yu, C. H., Zhang, Q., Sun, Y. Q., Xiong, Y. K., Han, X. Y., Tong, L. Z., He, Q. H., Ponce, F. & Chen, C. Q., Sep 2009, In : Journal of Electronic Materials. 38, 9, p. 1938-1943 6 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
Buffer layers
Sapphire
metalorganic chemical vapor deposition
1 Citation (Scopus)

Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure

Li, R., Zhang, J., Chen, L., Zhao, H., Yang, Z., Yu, T., Li, D., Liu, Z., Chen, W., Yang, Z., Zhang, G., Gan, Z., Hu, X., Wei, Q., Li, T. & Ponce, F., 2009, In : Applied Physics Letters. 94, 21, 211103.

Research output: Contribution to journalArticle

cathodoluminescence
ultraviolet lasers
semiconductor lasers
quantum wells
electrons
14 Citations (Scopus)

Evidence of two-dimensional hole gas in p-type AlGaN/AlN/GaN heterostructures

Wei, Q., Wu, Z., Sun, K., Ponce, F., Hertkorn, J. & Scholz, F., Dec 2009, In : Applied Physics Express. 2, 12, 121001.

Research output: Contribution to journalArticle

Heterojunctions
Gases
gases
Electron holography
Energy barriers
12 Citations (Scopus)

Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

Hertkorn, J., Thapa, S. B., Wunderer, T., Scholz, F., Wu, Z. H., Wei, Q. Y., Ponce, F., Moram, M. A., Humphreys, C. J., Vierheilig, C. & Schwarz, U. T., 2009, In : Journal of Applied Physics. 106, 1, 013720.

Research output: Contribution to journalArticle

vapor phase epitaxy
modulation
conductivity
light emitting diodes
electroluminescence
5 Citations (Scopus)

Measurement of the solubility of ammonia and nitrogen in gallium at atmospheric pressure

Garcia, R., Ren, B., Thomas, A. C. & Ponce, F., Jan 7 2009, In : Journal of Alloys and Compounds. 467, 1-2, p. 611-613 3 p.

Research output: Contribution to journalArticle

Gallium
Ammonia
Atmospheric pressure
Nitrogen
Solubility
24 Citations (Scopus)

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Fischer, A. M., Wu, Z., Sun, K., Wei, Q., Huang, Y., Senda, R., Iida, D., Iwaya, M., Amano, H. & Ponce, F., Apr 2009, In : Applied Physics Express. 2, 4, p. 410021-410023 3 p.

Research output: Contribution to journalArticle

Strain relaxation
Stacking faults
crystal defects
Semiconductor quantum wells
quantum wells
7 Citations (Scopus)

Nanoscale dislocation patterning by scratching in an atomic force microscope

Ponce, F., Wei, Q. Y., Wu, Z. H., Fonseca-Filho, H. D., Almeida, C. M., Prioli, R. & Cherns, D., 2009, In : Journal of Applied Physics. 106, 7, 076106.

Research output: Contribution to journalArticle

microscopes
indium phosphides
screw dislocations
linear arrays
locking

Physica Status Solidi (A) Applications and Materials: Preface

Allerman, A., Dupuis, R. D., Khan, A. & Ponce, F., Feb 2009, In : Physica Status Solidi (A) Applications and Materials Science. 206, 2, p. 193-194 2 p.

Research output: Contribution to journalArticle

2008
10 Citations (Scopus)

Atomic arrangement at the AlN/Si(110) interface

Contreras, O. E., Ruiz-Zepeda, F., Dadgar, A., Krost, A. & Ponce, F., Jun 2008, In : Applied Physics Express. 1, 6, p. 611041-611043 3 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Lattice mismatch
Substrates
High resolution transmission electron microscopy
Model structures
31 Citations (Scopus)

Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

Liu, J. P., Limb, J. B., Ryou, J. H., Yoo, D., Horne, C. A., Dupuis, R. D., Wu, Z. H., Fischer, A. M., Ponce, F., Hanser, A. D., Liu, L., Preble, E. A. & Evans, K. R., 2008, In : Applied Physics Letters. 92, 1, 011123.

Research output: Contribution to journalArticle

light emitting diodes
low currents
crystal defects
electroluminescence
metalorganic chemical vapor deposition
51 Citations (Scopus)

Control of quantum-confined Stark effect in InGaNGaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes

Ryou, J. H., Lee, W., Limb, J., Yoo, D., Liu, J. P., Dupuis, R. D., Wu, Z. H., Fischer, A. M. & Ponce, F., 2008, In : Applied Physics Letters. 92, 10, 101113.

Research output: Contribution to journalArticle

Stark effect
nitrides
light emitting diodes
quantum wells
electrostatics
9 Citations (Scopus)

Effect of native oxide mechanical deformation on InP nanoindentation

Almeida, C. M., Prioli, R. & Ponce, F., 2008, In : Journal of Applied Physics. 104, 11, 113509.

Research output: Contribution to journalArticle

nanoindentation
oxides
indium phosphides
plastic flow
piles
6 Citations (Scopus)

Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

Garcia, R., Thomas, A. C. & Ponce, F., Jun 1 2008, In : Journal of Crystal Growth. 310, 12, p. 3131-3134 4 p.

Research output: Contribution to journalArticle

Thick films
thick films
Luminescent devices
Ammonium Chloride
ammonium chlorides