• 11257 Citations
  • 49 h-Index
1976 …2021

Research output per year

If you made any changes in Pure these will be visible here soon.

Research Output

1999

Defect formation near GaN surfaces and interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H., Young, A. P., Tu, C., Naoi, Y., Ponce, F., Yang, Y., Lapeyre, G. J., MacKenzie, J. D. & Abernathy, C. R., Dec 15 1999, In : Physica B: Condensed Matter. 273-274, p. 70-74 5 p.

Research output: Contribution to journalConference article

24 Scopus citations

Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

Levin, T. M., Jessen, G. H., Ponce, F. & Brillson, L. J., Dec 1 1999, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17, 6, p. 2545-2552 8 p.

Research output: Contribution to journalArticle

28 Scopus citations

Localized states at InGaN/GaN quantum well interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H. & Ponce, F., Dec 13 1999, In : Applied Physics Letters. 75, 24, p. 3835-3837 3 p.

Research output: Contribution to journalArticle

35 Scopus citations

Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

Cherns, D., Barnard, J. & Ponce, F. A., Jul 2 1999, In : Solid State Communications. 111, 5, p. 281-285 5 p.

Research output: Contribution to journalArticle

40 Scopus citations
2000

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

Brillson, L. J., Young, A. P., Levin, T. M., Jessen, G. H., Schäfer, J., Yang, Y., Xu, S. H., Cruguel, H., Lapeyre, G. J., Ponce, F., Naoi, Y., Tu, C., McKenzie, J. D. & Abernathy, C. R., Jun 1 2000, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 75, 2-3, p. 218-223 6 p.

Research output: Contribution to journalConference article

7 Scopus citations

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

McCartney, M., Ponce, F., Cai, J. & Bour, D. P., May 22 2000, In : Applied Physics Letters. 76, 21, p. 3055-3057 3 p.

Research output: Contribution to journalArticle

51 Scopus citations

Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

Stirman, J. N., Ponce, F., Pavlovska, A., Tsong, I. S. T. & Smith, D., Feb 14 2000, In : Applied Physics Letters. 76, 7, p. 822-824 3 p.

Research output: Contribution to journalArticle

27 Scopus citations
2001

A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

Srinivasan, S., Liu, R., Bertram, F., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 1 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 41-44 4 p.

Research output: Contribution to journalArticle

27 Scopus citations

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3:Eu3+ Luminescent Powders

Hirata, G. A., Ramos, F., Garcia, R., Bosze, E. J., Mckittrick, J., Contreras, O. & Ponce, F., Nov 1 2001, In : Physica Status Solidi (A) Applied Research. 188, 1, p. 179-182 4 p.

Research output: Contribution to journalArticle

39 Scopus citations

Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well

Shi, L., Poweleit, C. D., Ponce, F., Menendez, J. & Chow, W. W., Jul 2 2001, In : Applied Physics Letters. 79, 1, p. 75-77 3 p.

Research output: Contribution to journalArticle

6 Scopus citations

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Cherns, D., Henley, S. J. & Ponce, F., Apr 30 2001, In : Applied Physics Letters. 78, 18, p. 2691-2693 3 p.

Research output: Contribution to journalArticle

203 Scopus citations

Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces

Brillson, L. J., Young, A. P., Jessen, G. H., Levin, T. M., Bradley, S. T., Goss, S. H., Bae, J., Ponce, F., Murphy, M. J., Schaff, W. J. & Eastman, L. F., May 15 2001, In : Applied Surface Science. 175-176, p. 442-449 8 p.

Research output: Contribution to journalArticle

3 Scopus citations

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Henley, S. J., Bewick, A., Cherns, D. & Ponce, F., Sep 1 2001, In : Journal of Crystal Growth. 230, 3-4, p. 481-486 6 p.

Research output: Contribution to journalArticle

7 Scopus citations

Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography

Cai, J., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 1 2001, In : Physica Status Solidi (A) Applied Research. 188, 2, p. 833-837 5 p.

Research output: Contribution to journalArticle

10 Scopus citations

Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

Cai, J., McCartney, M. & Ponce, F., 2001, Materials Research Society Symposium - Proceedings. Wetzel, C., Shur, M., Mishra, U., Gil, B. & Kishino, K. (eds.). Vol. 639.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spatially resolved cathodoluminescence study of As doped GaN

Bell, A., Ponce, F., Novikov, S. V., Foxon, C. T. & Harrison, I., Nov 1 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 207-211 5 p.

Research output: Contribution to journalArticle

2 Scopus citations

Spatial variation of luminescence in thick GaN films

Bertram, F., Srinivasan, S., Ponce, F., Riemann, T., Christen, J. & Molnar, R. J., Feb 26 2001, In : Applied Physics Letters. 78, 9, p. 1222-1224 3 p.

Research output: Contribution to journalArticle

16 Scopus citations

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning catholuminescence

Bertram, F., Srinivasan, S., Geng, L., Ponce, F., Riemann, T., Christen, J., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 1 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 35-39 5 p.

Research output: Contribution to journalArticle

11 Scopus citations

Surface Morphology of AlxGa1-xN Films Grown by MOCVD

Geng, L., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 1 2001, In : Physica Status Solidi (A) Applied Research. 188, 2, p. 803-806 4 p.

Research output: Contribution to journalArticle

12 Scopus citations

The nature of arsenic incorporation in GaN

Bell, A., Ponce, F., Novikov, S. V., Foxon, C. T. & Harrison, I., Nov 12 2001, In : Applied Physics Letters. 79, 20, p. 3239-3241 3 p.

Research output: Contribution to journalArticle

9 Scopus citations
2002

Atomic arrangement at the AlN/ZrB2 interface

Liu, R., Bell, A., Ponce, F., Kamiyama, S., Amano, H. & Akasaki, I., Oct 21 2002, In : Applied Physics Letters. 81, 17, p. 3182-3184 3 p.

Research output: Contribution to journalArticle

29 Scopus citations

Bright, crack-free InGaN/GaN light emitters on Si(111)

Dadgar, A., Poschenrieder, M., Contreras, O., Christen, J., Fehse, K., Bläsing, J., Diez, A., Schulze, F., Riemann, T., Ponce, F. & Krost, A., Aug 1 2002, In : Physica Status Solidi (A) Applied Research. 192, 2, p. 308-313 6 p.

Research output: Contribution to journalConference article

48 Scopus citations

Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN

Cai, J. & Ponce, F., Aug 1 2002, In : Physica Status Solidi (A) Applied Research. 192, 2, p. 407-411 5 p.

Research output: Contribution to journalConference article

42 Scopus citations

Distinct magnesium incorporation behavior in laterally grown AlGaN

Liu, R., Bell, A., Ponce, F., Cherns, D., Amano, H. & Akasaki, I., 2002, Materials Research Society Symposium - Proceedings. Wetzel, C., Yu, E. T., Speck, J. S., Rizzi, A. & Arakawa, Y. (eds.). Vol. 743. p. 27-34 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron holography studies of the charge on dislocations in GaN

Cherns, D., Jiao, C. G., Mokhtari, H., Cai, J. & Ponce, F., Dec 1 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 924-930 7 p.

Research output: Contribution to journalArticle

40 Scopus citations

Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

Hu, C. W., Bell, A., Ponce, F., Smith, D. & Tsong, I. S. T., Oct 21 2002, In : Applied Physics Letters. 81, 17, p. 3236-3238 3 p.

Research output: Contribution to journalArticle

39 Scopus citations

Hollow core dislocations in Mg-doped AlGaN

Cherns, D., Wang, Y. Q., Liu, R., Ponce, F., Amano, H. & Akasaki, I., 2002, Materials Research Society Symposium - Proceedings. Wetzel, C., Yu, E. T., Speck, J. S., Rizzi, A. & Arakawa, Y. (eds.). Vol. 743. p. 609-614 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low-energy electron-excited nanoluminescence studies of GaN and related materials

Brillson, L. J., Bradley, S. T., Goss, S. H., Sun, X., Murphy, M. J., Schaff, W. J., Eastman, L. F., Look, D. C., Molnar, R. J., Ponce, F., Ikeo, N. & Sakai, Y., May 8 2002, In : Applied Surface Science. 190, 1-4, p. 498-507 10 p.

Research output: Contribution to journalArticle

4 Scopus citations

Low Stokes shift in thick and homogeneous InGaN epilayers

Srinivasan, S., Bertram, F., Bell, A., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Jan 28 2002, In : Applied Physics Letters. 80, 4, p. 550-552 3 p.

Research output: Contribution to journalArticle

58 Scopus citations

Luminescence properties of charged dislocations in semi-insulating GaN: Zn

Srinivasan, S., Cai, J., Contreras, O., Ponce, F., Look, D. C. & Molnar, R. J., 2002, Physica Status Solidi C: Conferences. 1 ed. p. 508-511 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Mg incorporation in AlGaN layers grown on grooved sapphire substrates

Cherns, D., Baines, M. Q., Wang, Y. Q., Liu, R., Ponce, F., Amano, H. & Akasaki, I., Dec 1 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 850-854 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers

Bertram, F., Srinivasan, S., Geng, L., Ponce, F., Riemann, T. & Christen, J., May 13 2002, In : Applied Physics Letters. 80, 19, p. 3524-3526 3 p.

Research output: Contribution to journalArticle

18 Scopus citations

Microstructural properties of Eu-doped GaN luminescent powders

Contreras, O., Srinivasan, S., Ponce, F., Hirata, G. A., Ramos, F. & McKittrick, J., Sep 9 2002, In : Applied Physics Letters. 81, 11, p. 1993-1995 3 p.

Research output: Contribution to journalArticle

27 Scopus citations

Migration of dislocations in strained GaN heteroepitaxial layers

Sahonta, S. L., Baines, M. Q., Cherns, D., Amano, H. & Ponce, F., Dec 1 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 952-955 4 p.

Research output: Contribution to journalArticle

18 Scopus citations

Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N

Cherns, D., Wang, Y. Q., Liu, R. & Ponce, F., Dec 9 2002, In : Applied Physics Letters. 81, 24, p. 4541-4543 3 p.

Research output: Contribution to journalArticle

23 Scopus citations

Physica Status Solidi (B) Basic Research: Preface

Ulloa, S. E. & Ponce, F., Jan 1 2002, In : Physica Status Solidi (B) Basic Research. 230, 2, 1 p.

Research output: Contribution to journalArticle

Polarity determination by atomic location by channeling-enhanced microanalysis

Jiang, N., Eustis, T. J., Cai, J., Ponce, F., Spence, J. & Silcox, J., Jan 21 2002, In : Applied Physics Letters. 80, 3, p. 389-391 3 p.

Research output: Contribution to journalArticle

13 Scopus citations

Response to: Comment on 'Low Stokes shift in thick and homogeneous InGaN epilayers'(Appl. Phys. Lett (2002) 81 1353))

Srinivasan, S., Bertram, F., Bell, A. & Ponce, F., Aug 12 2002, In : Applied Physics Letters. 81, 7, p. 1355-1356 2 p.

Research output: Contribution to journalComment/debate

1 Scopus citations

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence

Bertram, F., Srinivasan, S., Liu, R., Geng, L., Ponce, F., Riemann, T., Christen, J., Tanaka, S., Omiya, H. & Nakagawa, Y., May 30 2002, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 93, 1-3, p. 19-23 5 p.

Research output: Contribution to journalArticle

10 Scopus citations

Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography

Cai, J. & Ponce, F., Jun 15 2002, In : Journal of Applied Physics. 91, 12, p. 9856-9862 7 p.

Research output: Contribution to journalArticle

39 Scopus citations

Surface review and letters: Preface

Cota, L., Ponce, F. & Ulloa, S., Oct 1 2002, In : Surface Review and Letters. 9, 5-6, p. iii-iv

Research output: Contribution to journalArticle

The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

Novikov, S. V., Winser, A. J., Bell, A., Harrison, I., Li, T., Campion, R. P., Staddon, C. R., Davis, C. S., Ponce, F. & Foxon, C. T., May 1 2002, In : Journal of Crystal Growth. 240, 3-4, p. 423-430 8 p.

Research output: Contribution to journalArticle

12 Scopus citations
2003

Atomic arrangement at the AIN/Si (111) interface

Liu, R., Ponce, F., Dadgar, A. & Krost, A., Aug 4 2003, In : Applied Physics Letters. 83, 5, p. 860-862 3 p.

Research output: Contribution to journalArticle

105 Scopus citations

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Contreras, O., Ponce, F., Christen, J., Dadgar, A. & Krost, A., Dec 16 2003, In : Applied Physics Letters. 81, 25, p. 4712-4714 3 p.

Research output: Contribution to journalArticle

96 Scopus citations

Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

Liu, R., Ponce, F., Sahonta, S. L., Cherns, D., Amano, H. & Akasaki, I., 2003, Materials Research Society Symposium - Proceedings. Ng, H. M., Wraback, M., Hiramatsu, K. & Grandjean, N. (eds.). Vol. 798. p. 775-780 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect and localization in InGaN/GaN quantum wells

Bell, A., Ponce, F., Marui, H. & Tanaka, S., 2003, IEEE International Symposium on Compound Semiconductors, Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 6-7 2 p. 1239878

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gallium-nitride-based devices on silicon

Dadgar, A., Poschenrieder, M., Daumiller, I., Kunze, M., Strittmatter, A., Riemann, T., Bertram, F., Bläsing, J., Schulze, F., Reiher, A., Krtschil, A., Contreras, O., Kaluza, A., Modlich, A., Kamp, M., Reißmann, L., Diez, A., Christen, J., Ponce, F., Bimberg, D. & 2 others, Kohn, E. & Krost, A., 2003, Physica Status Solidi C: Conferences. 6 SPEC. ISS. ed. Vol. 0. p. 1940-1949 10 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Scopus citations

Glide along non-basal slip planes in InGaN epilayers

Srinivasan, S., Geng, L., Ponce, F., Narukawa, Y. & Tanaka, S., 2003, Physica Status Solidi C: Conferences. 7 ed. p. 2440-2443 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Growth-direction dependence of optical properties in epitaxially laterally overgrown GaN

Srinivasan, S., Geng, L., Shi, L., Ponce, F., Bertram, F., Christen, J., Narukawa, Y. & Tanaka, S., 2003, IEEE International Symposium on Compound Semiconductors, Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 35-36 2 p. 1239893

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth of GaN on ZrB 2 substrate by metal-organic vapor phase epitaxy

Tomida, Y., Nitta, S., Kamiyama, S., Amano, H., Akasaki, I., Otani, S., Kinoshita, H., Liu, R., Bell, A. & Ponce, F., Jun 30 2003, In : Applied Surface Science. 216, 1-4 SPEC., p. 502-507 6 p.

Research output: Contribution to journalArticle

28 Scopus citations