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Research Output 1993 2019

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Article
2019
Kinetic Monte Carlo
Amorphous Silicon
Passivation
Heterojunction
Silicon

Phonon Dissipation in Nanostructured Semiconductor Devices

Mohamed, M. Y., Raleva, K., Ravaioli, U., Vasileska, D. & Aksamija, Z., Jan 1 2019, In : IEEE Nanotechnology Magazine.

Research output: Contribution to journalArticle

Timing circuits
Semiconductor devices
Integrated circuits
Transistors
Photolithography

Phonon-limited mobility modeling of gallium nitride nanowires

Kumar, V. N. & Vasileska, D., Mar 21 2019, In : Journal of Applied Physics. 125, 11, 114301.

Research output: Contribution to journalArticle

Open Access
gallium nitrides
nanowires
scattering
electron phonon interactions
electron mobility
2018
1 Citation (Scopus)

Hole transport in selenium semiconductors using density functional theory and bulk Monte Carlo

Mukherjee, A., Vasileska, D. & Goldan, A. H., Dec 21 2018, In : Journal of Applied Physics. 124, 23, 235102.

Research output: Contribution to journalArticle

selenium
density functional theory
avalanches
Boltzmann transport equation
electric fields
2017
3 Citations (Scopus)

The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs

Kannan, G. & Vasileska, D., Sep 21 2017, In : Journal of Applied Physics. 122, 11, 114303.

Research output: Contribution to journalArticle

electron mobility
surface roughness
field effect transistors
scattering
Born approximation
2016
9 Citations (Scopus)

Numerical Simulation of Copper Migration in Single Crystal CdTe

Guo, D., Fang, T., Moore, A., Brinkman, D., Akis, R., Krasikov, D., Sankin, I., Ringhofer, C. & Vasileska, D., Jun 15 2016, (Accepted/In press) In : IEEE Journal of Photovoltaics.

Research output: Contribution to journalArticle

Copper
Doping (additives)
Single crystals
absorbers (materials)
copper
2 Citations (Scopus)

Special issue: electrothermal and thermoelectric modeling of nanoscale devices

Vasileska, D. & Raleva, K., Mar 1 2016, In : Journal of Computational Electronics. 15, 1, p. 1-2 2 p.

Research output: Contribution to journalArticle

Modeling
2015
3 Citations (Scopus)
heterojunctions
solar cells
amorphous silicon
defects
kinetics
14 Citations (Scopus)

Self-consistent simulation of CdTe solar cells with active defects

Brinkman, D., Guo, D., Akis, R., Ringhofer, C., Sankin, I., Fang, T. & Vasileska, D., Jul 21 2015, In : Journal of Applied Physics. 118, 3, 035704.

Research output: Contribution to journalArticle

solar cells
copper
defects
cadmium tellurides
simulation
2014
2 Citations (Scopus)

1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator

Both, T. H., Wirth, G. I. & Vasileska, D., Dec 24 2014, (Accepted/In press) In : Journal of Computational Electronics.

Research output: Contribution to journalArticle

1/f Noise
MOSFET
SPICE
Fermi level
simulators
2013

Current degradation due to electromechanical coupling in GaN HEMT's

Padmanabhan, B., Vasileska, D. & Goodnick, S., Jul 2013, In : Microelectronics Journal. 44, 7, p. 592-597 6 p.

Research output: Contribution to journalArticle

Electromechanical coupling
High electron mobility transistors
high electron mobility transistors
Polarization
degradation
4 Citations (Scopus)

Modeling thermal effects in nano-devices

Vasileska, D., 2013, In : Microelectronic Engineering. 109, p. 163-167 5 p.

Research output: Contribution to journalArticle

Thermal effects
temperature effects
Heat generation
Silicon
Temperature control
19 Citations (Scopus)

Physical scales in the Wigner-Boltzmann equation

Nedjalkov, M., Selberherr, S., Ferry, D. K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I. & Schwaha, P., Jan 2013, In : Annals of Physics. 328, p. 220-237 18 p.

Research output: Contribution to journalArticle

oscillators
particle theory
harmonic oscillators
phonons
theorems
2 Citations (Scopus)

Reliability concerns due to self-heating effects in GaN HEMTs

Padmanabhan, B., Vasileska, D. & Goodnick, S., Sep 2013, In : Journal of Integrated Circuits and Systems. 8, 2, p. 78-82 5 p.

Research output: Contribution to journalArticle

Electrostatic devices
High electron mobility transistors
Heating
3 Citations (Scopus)

The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices

Raleva, K. & Vasileska, D., Dec 2013, In : Journal of Computational Electronics. 12, 4, p. 601-610 10 p.

Research output: Contribution to journalArticle

SOI (semiconductors)
Thermal Conductivity
Heating
Thermal conductivity
thermal conductivity

Tool-based curricula and visual learning

Vasileska, D., Klimeck, G., Magana, A. & Goodnick, S., Dec 2013, In : Electronics. 17, 2, p. 95-104 10 p.

Research output: Contribution to journalArticle

Curricula
Students
Nanotechnology
Quantum theory
Nanoelectronics
31 Citations (Scopus)

Wigner quasi-particle attributes-An asymptotic perspective

Nedjalkov, M., Schwaha, P., Selberherr, S., Sellier, J. M. & Vasileska, D., Apr 22 2013, In : Applied Physics Letters. 102, 16, 163113.

Research output: Contribution to journalArticle

elementary excitations
integral equations
quantum mechanics
grids
momentum
2012
10 Citations (Scopus)

Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants

Wirth, G., Vasileska, D., Ashraf, N., Brusamarello, L., Della Giustina, R. & Srinivasan, P., Dec 2012, In : Microelectronics Reliability. 52, 12, p. 2955-2961 7 p.

Research output: Contribution to journalArticle

Telegraph
Doping (additives)
traps
methodology
simulation
12 Citations (Scopus)

Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors

Vasileska, D., Raleva, K., Hossain, A. & Goodnick, S., Sep 2012, In : Journal of Computational Electronics. 11, 3, p. 238-248 11 p.

Research output: Contribution to journalArticle

Silicon on insulator technology
Silicon-on-insulator
Nanowires
Heating
Transistors
8 Citations (Scopus)

Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport

Ryu, H., Park, H. H., Shin, M., Vasileska, D. & Klimeck, G., Mar 15 2012, In : Journal of Applied Physics. 111, 6, 063705.

Research output: Contribution to journalArticle

ballistics
simulation
Green's functions
field effect transistors
recursive functions
10 Citations (Scopus)

Is self-heating responsible for the current collapse in GaN HEMTs?

Padmanabhan, B., Vasileska, D. & Goodnick, S., Mar 2012, In : Journal of Computational Electronics. 11, 1, p. 129-136 8 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Heating
Electron temperature
Electron
9 Citations (Scopus)

Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

Raleva, K., Vasileska, D., Hossain, A., Yoo, S. K. & Goodnick, S., Mar 2012, In : Journal of Computational Electronics. 11, 1, p. 106-117 12 p.

Research output: Contribution to journalArticle

Silicon-on-insulator
MOSFET
Silicon
simulators
Heating
2011
10 Citations (Scopus)

Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants

Ashraf, N., Vasileska, D., Wirth, G. & Srinivasan, P., Aug 2011, In : IEEE Electron Device Letters. 32, 8, p. 1044-1046 3 p., 5930325.

Research output: Contribution to journalArticle

MOSFET devices
Threshold voltage
Analytical models
Doping (additives)
2 Citations (Scopus)

Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine

Ng, G., Vasileska, D. & Schroder, D. K., Jan 2011, In : Superlattices and Microstructures. 49, 1, p. 109-115 7 p.

Research output: Contribution to journalArticle

genetic algorithms
Band structure
pseudopotentials
Genetic algorithms
Energy gap
4 Citations (Scopus)
Telegraph
Static analysis
Coulomb interactions
Threshold voltage
Doping (additives)
2010
8 Citations (Scopus)
noise threshold
Current Fluctuations
1/f Noise
Threshold voltage
Trap
6 Citations (Scopus)

An effective potential approach to modeling 25 nm MOSFET devices

Ahmed, S., Ringhofer, C. & Vasileska, D., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 197-200 4 p.

Research output: Contribution to journalArticle

MOSFET
Boltzmann equation
Effective Potential
MOSFET devices
Semiconductor devices
2 Citations (Scopus)

Electron-phonon interaction in nanowires: A Monte Carlo study of the effect of the field

Atanassov, E., Gurov, T., Karaivanova, A., Nedjalkov, M., Vasileska, D. & Raleva, K., Nov 2010, In : Mathematics and Computers in Simulation. 81, 3, p. 515-521 7 p.

Research output: Contribution to journalArticle

Electron-phonon Interaction
Electron-phonon interactions
Nanowires
Monte Carlo Study
Boltzmann equation
16 Citations (Scopus)

Electrothermal monte carlo simulation of GaN HEMTs including electronelectron interactions

Ashok, A., Vasileska, D., Hartin, O. L. & Goodnick, S., Mar 2010, In : IEEE Transactions on Electron Devices. 57, 3, p. 562-570 9 p., 5395682.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Phonons
Energy balance
Thermal effects
24 Citations (Scopus)
Silicon
Thermal conductivity
Simulators
Temperature
Scattering
3 Citations (Scopus)

Impact of RDF and RTS on the performance of SRAM cells

Camargo, V. V. A., Ashraf, N., Brusamarello, L., Vasileska, D. & Wirth, G., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 122-127 6 p.

Research output: Contribution to journalArticle

Telegraph
Static random access storage
Threshold voltage
Doping (additives)
Normal distribution
3 Citations (Scopus)

The role of the source and drain contacts on self-heating effect in nanowire transistors

Vasileska, D., Hossain, A., Raleva, K. & Goodnick, S., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 180-186 7 p.

Research output: Contribution to journalArticle

Nanowires
Heating
Transistors
nanowires
transistors
2009
1 Citation (Scopus)
noise threshold
Current Fluctuations
1/f Noise
Threshold voltage
Trap

An effective potential approach to modeling 25 nm MOSFET devices

Ahmed, S., Ringhofer, C. & Vasileska, D., Dec 2009, In : Journal of Computational Electronics. 8, 3-4, p. 197-200 4 p.

Research output: Contribution to journalArticle

MOSFET
Boltzmann equation
Effective Potential
MOSFET devices
Semiconductor devices
17 Citations (Scopus)

Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiC

Ng, G., Vasileska, D. & Schroder, D. K., 2009, In : Journal of Applied Physics. 106, 5, 053719.

Research output: Contribution to journalArticle

scattering
electrons
Boltzmann transport equation
contraction
acoustics
2 Citations (Scopus)

Computational nanoelectronics research and education at nanoHUB.org

Haley, B. P., Klimeck, G., Luisier, M., Vasileska, D., Paul, A., Shivarajapura, S. & Beaudoin, D. L., 2009, In : Journal of Computational Electronics. 8, 2, p. 124-131 8 p.

Research output: Contribution to journalArticle

Nanoelectronics
education
Education
Simulator
simulators
24 Citations (Scopus)

Diffusive transport in quasi-2D and quasi-1D electron systems

Knezevic, I., Ramayya, E. B., Vasileska, D. & Goodnick, S., 2009, In : Journal of Computational and Theoretical Nanoscience. 6, 8, p. 1725-1753 29 p.

Research output: Contribution to journalArticle

Scattering
Electron
Semiconductor materials
Boltzmann transport equation
Electrons
1 Citation (Scopus)

Impact of RDF and RTS on the performance of SRAM cells

Camargo, V. V. A., Ashraf, N., Brusamarello, L., Vasileska, D. & Wirth, G., Dec 2009, In : Journal of Computational Electronics. 8, 3-4, p. 122-127 6 p.

Research output: Contribution to journalArticle

Telegraph
Static random access storage
Threshold voltage
Doping (additives)
Normal distribution
16 Citations (Scopus)

Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

Ashok, A., Vasileska, D., Goodnick, S. & Hartin, O. L., 2009, In : IEEE Transactions on Electron Devices. 56, 5, p. 998-1006 9 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Polarization
Electric potential
Charge density
Simulators
2 Citations (Scopus)

Modeling self-heating effects in nanoscale SOI devices

Vasileska, D., Goodnick, S. & Raleva, K., 2009, In : Journal of Physics: Conference Series. 193, 012036.

Research output: Contribution to journalArticle

insulators
heating
silicon
simulators
boundary conditions

Preface

Jacobi, R., Vasileska, D. & Wirth, G., 2009, In : Unknown Journal. 49, 1

Research output: Contribution to journalArticle

45 Citations (Scopus)
Silicon
Boundary conditions
Heating
Degradation
Diamond

The role of the source and drain contacts on self-heating effect in nanowire transistors

Vasileska, D., Hossain, A., Raleva, K. & Goodnick, S., Dec 2009, In : Journal of Computational Electronics. 8, 3-4, p. 180-186 7 p.

Research output: Contribution to journalArticle

Nanowires
Heating
Transistors
nanowires
transistors
2008
7 Citations (Scopus)

3D NEGF quantum transport simulator for modeling ballistic transport in nano FinFETs

Khan, H. R., Mamaluy, D. & Vasileska, D., Mar 1 2008, In : Journal of Physics: Conference Series. 107, 1, 012007.

Research output: Contribution to journalArticle

ballistics
simulators
Green's functions
formalism
engineering
22 Citations (Scopus)

Approaching optimal characteristics of 10-nm high-performance devices: A quantum transport simulation study of Si FinFET

Khan, H. R., Mamaluy, D. & Vasileska, D., Mar 2008, In : IEEE Transactions on Electron Devices. 55, 3, p. 743-753 11 p.

Research output: Contribution to journalArticle

Semiconductor materials
simulation
Quantum confinement
Simulators
simulators

Can silicon FinFETs satisfy ITRS projections for high performance 10 nm devices?

Khan, H., Mamaluy, D. & Vasileska, D., 2008, In : Journal of Computational Electronics. 7, 3, p. 284-287 4 p.

Research output: Contribution to journalArticle

Signal analysis
Silicon
Oxides
High Performance
Simulators
10 Citations (Scopus)

Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires

Ramayya, E. B., Vasileska, D., Goodnick, S. & Knezevic, I., 2008, In : Journal of Computational Electronics. 7, 3, p. 319-323 5 p.

Research output: Contribution to journalArticle

Silicon Nanowires
Electron mobility
Silicon
Phonon
Thermal Conductivity
146 Citations (Scopus)

Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering

Ramayya, E. B., Vasileska, D., Goodnick, S. & Knezevic, I., 2008, In : Journal of Applied Physics. 104, 6, 063711.

Research output: Contribution to journalArticle

surface roughness
nanowires
roughness
electron mobility
acoustics
3 Citations (Scopus)

Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs

Khan, H., Mamaluy, D. & Vasileska, D., 2008, In : Journal of Computational Electronics. 7, 3, p. 346-349 4 p.

Research output: Contribution to journalArticle

Quantum Transport
fins
Doping (additives)
Simulation
simulation
28 Citations (Scopus)

Is SOD technology the solution to heating problems in SOI devices?

Raleva, K., Vasileska, D. & Goodnick, S., Jun 2008, In : IEEE Electron Device Letters. 29, 6, p. 621-624 4 p.

Research output: Contribution to journalArticle

Heat problems
Diamond
Diamonds
Silicon
Thermal conductivity