Dragica Vasileska

Research output

Research output per year 1993 2021

• 2979 Citations
• 25 h-Index
• 159 Conference contribution
• 156 Article
• 15 Conference article
• 7 Review article
• 9 More
  • 6 Chapter
  • 1 Book
  • 1 Paper
  • 1 Editorial

Research output per year

Research output per year

Search results

• 2021

  Monte carlo simulation of hole transport in sige alloys

  Soares, C. S., Rossetto, A. C. J., Vasileska, D. & Wirth, G. I., 2021, In: Journal of Integrated Circuits and Systems. 16, 1

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Si-Ge alloys 100%
  • Valence bands 32%
  • Phonons 28%
  • Monte Carlo methods 19%
  • Scattering 17%

• Monte Carlo Solution of High Electric Field Hole Transport Processes in Avalanche Amorphous Selenium

  Mukherjee, A., Vasileska, D., Akis, J. & Goldan, A. H., Feb 23 2021, In: ACS Omega. 6, 7, p. 4574-4581 8 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Impact Ionization 100%
  • Impact ionization 88%
  • Selenium 88%
  • Hole Transport 67%
  • Electric fields 52%

• Role of Hydrogen in the Electronic Properties of a-Si:H/c-Si Heterostructures

  Meidanshahi, R. V., Vasileska, D. & Goodnick, S. M., Jun 17 2021, In: Journal of Physical Chemistry C. 125, 23, p. 13050-13058 9 p.

  Research output: Contribution to journal › Article › peer-review

  • Electronic properties 100%
  • Amorphous silicon 88%
  • Amorphous Silicon 87%
  • Heterojunctions 84%
  • amorphous silicon 59%

• Spatial profiles of photon chemical potential in near-field thermophotovoltaic cells

  Feng, D., Tervo, E. J., Vasileska, D., Yee, S. K., Rohatgi, A. & Zhang, Z. M., Jun 7 2021, In: Journal of Applied Physics. 129, 21, 213101.

  Research output: Contribution to journal › Article › peer-review

  • near fields 100%
  • photons 65%
  • profiles 63%
  • emitters 32%
  • direct power generators 27%
• 2020

  3-D Monte Carlo device simulator for variability modeling of p-MOSFETs

  Camargo, V. V. A., Rossetto, A. C. J., Vasileska, D. & Wirth, G. I., Jun 1 2020, In: Journal of Computational Electronics. 19, 2, p. 668-676 9 p.

  Research output: Contribution to journal › Article › peer-review

  • MOSFET 100%
  • Simulator 75%
  • Hole Mobility 69%
  • 3D 63%
  • Monte Carlo Method 62%
  2 Scopus citations

• Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

  Cheng, C. Y. & Vasileska, D., Apr 21 2020, In: Journal of Applied Physics. 127, 15, 5144214.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • electrons 100%
  • interactions 93%
  • simulation 90%
  • electron mobility 81%
  • scattering 80%
  2 Scopus citations

• GaN Vertical-Channel Junction Field-Effect Transistors with Regrown p-GaN by MOCVD

  Yang, C., Fu, H., Kumar, V. N., Fu, K., Liu, H., Huang, X., Yang, T. H., Chen, H., Zhou, J., Deng, X., Montes, J., Ponce, F. A., Vasileska, D. & Zhao, Y., Oct 2020, In: IEEE Transactions on Electron Devices. 67, 10, p. 3972-3977 6 p., 9159872.

  Research output: Contribution to journal › Article › peer-review

  • Metallorganic chemical vapor deposition 100%
  • Field effect transistors 67%
  • Field Effect 63%
  • Chemical Vapour Deposition 57%
  • Demonstrations 25%
  7 Scopus citations

• Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions

  Cheng, C. Y. & Vasileska, D., Sep 2020, In: IEEE Transactions on Electron Devices. 67, 9, p. 3705-3710 6 p., 9144264.

  Research output: Contribution to journal › Article › peer-review

  • Coulomb interactions 100%
  • Monte Carlo Method 66%
  • Electron Density 57%
  • Molecular Dynamics 46%
  • Voltage 45%
  1 Scopus citations

• Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations

  Rossetto, A. C. J., Camargo, V. V. A., Both, T. H., Vasileska, D. & Wirth, G. I., Jun 1 2020, In: Journal of Computational Electronics. 19, 2, p. 648-657 10 p.

  Research output: Contribution to journal › Article › peer-review

  • MOSFET 100%
  • Device Simulation 98%
  • Drain Current 90%
  • Signal filtering and prediction 89%
  • Drain current 74%
  1 Scopus citations

• Understanding Transport in Hole Contacts of Silicon Heterojunction Solar Cells by Simulating TLM Structures

  Muralidharan, P., Leilaeioun, M. A., Weigand, W., Holman, Z. C., Goodnick, S. M. & Vasileska, D., Mar 2020, In: IEEE Journal of Photovoltaics. 10, 2, p. 363-371 9 p., 8936950.

  Research output: Contribution to journal › Article › peer-review

  • Heterojunctions 100%
  • Solar cells 81%
  • ITO (semiconductors) 79%
  • heterojunctions 67%
  • electric contacts 67%
  4 Scopus citations
• 2019

  Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells

  Muralidharan, P., Goodnick, S. M. & Vasileska, D., Dec 1 2019, In: Journal of Computational Electronics. 18, 4, p. 1152-1161 10 p.

  Research output: Contribution to journal › Article › peer-review

  • Amorphous Silicon 100%
  • Heterojunction 92%
  • Kinetic Monte Carlo 88%
  • Passivation 87%
  • Solar Cells 85%
  2 Scopus citations

• Phonon Dissipation in Nanostructured Semiconductor Devices: Dispersing Heat Is Critical for Continued Integrated Circuit Progress

  Mohamed, M., Raleva, K., Ravaioli, U., Vasileska, D. & Aksamija, Z., Aug 2019, In: IEEE Nanotechnology Magazine. 13, 4, p. 6-17 12 p., 8734706.

  Research output: Contribution to journal › Article › peer-review

  • Phonons 100%
  • Semiconductor devices 74%
  • Integrated circuits 58%
  • Transistors 54%
  • Photolithography 39%
  1 Scopus citations

• Phonon-limited mobility modeling of gallium nitride nanowires

  Kumar, V. N. & Vasileska, D., Mar 21 2019, In: Journal of Applied Physics. 125, 11, 114301.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • gallium nitrides 100%
  • nanowires 69%
  • phonons 58%
  • scattering 44%
  • electron phonon interactions 23%

• PVRD-FASP: A Unified Solver for Modeling Carrier and Defect Transport in Photovoltaic Devices

  Shaik, A. R., Brinkman, D., Sankin, I., Ringhofer, C., Krasikov, D., Kang, H., Benes, B. & Vasileska, D., Nov 2019, In: IEEE Journal of Photovoltaics. 9, 6, p. 1602-1613 12 p., 8826615.

  Research output: Contribution to journal › Article › peer-review

  • Carrier transport 100%
  • Charge Carrier 61%
  • Differential equations 57%
  • Solar Cell 55%
  • differential equations 52%
  2 Scopus citations
• 2018

  Hole transport in selenium semiconductors using density functional theory and bulk Monte Carlo

  Mukherjee, A., Vasileska, D. & Goldan, A. H., Dec 21 2018, In: Journal of Applied Physics. 124, 23, 235102.

  Research output: Contribution to journal › Article › peer-review

  • selenium 100%
  • density functional theory 67%
  • avalanches 24%
  • Boltzmann transport equation 15%
  • electric fields 14%
  5 Scopus citations
• 2017

  The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs

  Kannan, G. & Vasileska, D., Sep 21 2017, In: Journal of Applied Physics. 122, 11, 114303.

  Research output: Contribution to journal › Article › peer-review

  • electron mobility 100%
  • surface roughness 82%
  • field effect transistors 76%
  • Born approximation 51%
  • scattering 49%
  4 Scopus citations
• 2016

  Numerical Simulation of Copper Migration in Single Crystal CdTe

  Guo, D., Fang, T., Moore, A., Brinkman, D., Akis, R., Krasikov, D., Sankin, I., Ringhofer, C. & Vasileska, D., Sep 2016, In: IEEE Journal of Photovoltaics. 6, 5, p. 1286-1291 6 p., 7492260.

  Research output: Contribution to journal › Article › peer-review

  • Crystal Point Defect 100%
  • Single crystals 89%
  • Doping (additives) 86%
  • Cooling 68%
  • Doping Material 68%
  10 Scopus citations

• Special issue: electrothermal and thermoelectric modeling of nanoscale devices

  Vasileska, D. & Raleva, K., Mar 1 2016, In: Journal of Computational Electronics. 15, 1, p. 1-2 2 p.

  Research output: Contribution to journal › Article › peer-review
  2 Scopus citations
• 2015

  1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator

  Both, T. H., Wirth, G. I. & Vasileska, D., Feb 21 2015, In: Journal of Computational Electronics. 14, 1, p. 15-20 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Fermi level 100%
  • MOSFET 98%
  • 1/f Noise 94%
  • Simulator 74%
  • SPICE 62%
  2 Scopus citations

• A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells

  Muralidharan, P., Vasileska, D., Goodnick, S. & Bowden, S., Nov 1 2015, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 9-11, p. 1198-1200 3 p.

  Research output: Contribution to journal › Article › peer-review

  • heterojunctions 100%
  • solar cells 84%
  • amorphous silicon 69%
  • kinetics 67%
  • defects 63%
  4 Scopus citations

• Self-consistent simulation of CdTe solar cells with active defects

  Brinkman, D., Guo, D., Akis, R., Ringhofer, C., Sankin, I., Fang, T. & Vasileska, D., Jul 21 2015, In: Journal of Applied Physics. 118, 3, 035704.

  Research output: Contribution to journal › Article › peer-review

  • solar cells 100%
  • copper 96%
  • defects 74%
  • cadmium tellurides 56%
  • simulation 51%
  14 Scopus citations
• 2013

  Current degradation due to electromechanical coupling in GaN HEMT's

  Padmanabhan, B., Vasileska, D. & Goodnick, S., Jul 2013, In: Microelectronics Journal. 44, 7, p. 592-597 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Electromechanical coupling 100%
  • High electron mobility transistors 82%
  • high electron mobility transistors 73%
  • Polarization 65%
  • Degradation 49%

• Modeling thermal effects in nano-devices

  Vasileska, D., 2013, In: Microelectronic Engineering. 109, p. 163-167 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Thermal effects 100%
  • temperature effects 89%
  • Nonconductor 55%
  • Semiconductor 37%
  • Heat 36%
  5 Scopus citations

• Physical scales in the Wigner-Boltzmann equation

  Nedjalkov, M., Selberherr, S., Ferry, D. K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I. & Schwaha, P., Jan 2013, In: Annals of Physics. 328, p. 220-237 18 p.

  Research output: Contribution to journal › Article › peer-review

  • oscillators 100%
  • particle theory 91%
  • harmonic oscillators 67%
  • theorems 55%
  • degrees of freedom 53%
  20 Scopus citations

• Reliability concerns due to self-heating effects in GaN HEMTs

  Padmanabhan, B., Vasileska, D. & Goodnick, S., Sep 1 2013, In: Journal of Integrated Circuits and Systems. 8, 2, p. 78-82 5 p.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Electrostatic devices 77%
  • Heating 61%
  2 Scopus citations

• The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices

  Raleva, K. & Vasileska, D., Dec 1 2013, In: Journal of Computational Electronics. 12, 4, p. 601-610 10 p.

  Research output: Contribution to journal › Article › peer-review

  • Thermal Conductivity 100%
  • Heating 92%
  • SOI (semiconductors) 84%
  • Thermal conductivity 69%
  • thermal conductivity 60%
  4 Scopus citations

• Tool-based curricula and visual learning

  Vasileska, D., Klimeck, G., Magana, A. & Goodnick, S., Dec 2013, In: Electronics. 17, 2, p. 95-104 10 p.

  Research output: Contribution to journal › Article › peer-review

  • Curricula 100%
  • Students 55%
  • Nanotechnology 39%
  • Quantum theory 19%
  • Nanoelectronics 9%

• Wigner quasi-particle attributes-An asymptotic perspective

  Nedjalkov, M., Schwaha, P., Selberherr, S., Sellier, J. M. & Vasileska, D., Apr 22 2013, In: Applied Physics Letters. 102, 16, 163113.

  Research output: Contribution to journal › Article › peer-review

  • elementary excitations 100%
  • quantum mechanics 40%
  • integral equations 39%
  • grids 36%
  • momentum 30%
  36 Scopus citations
• 2012

  Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants

  Wirth, G., Vasileska, D., Ashraf, N., Brusamarello, L., Della Giustina, R. & Srinivasan, P., Dec 2012, In: Microelectronics Reliability. 52, 12, p. 2955-2961 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Telegraph 100%
  • Doping (additives) 78%
  • Doping Material 61%
  • Simulation 44%
  • traps 42%
  11 Scopus citations

• Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors

  Vasileska, D., Raleva, K., Hossain, A. & Goodnick, S., Sep 1 2012, In: Journal of Computational Electronics. 11, 3, p. 238-248 11 p.

  Research output: Contribution to journal › Article › peer-review

  • Silicon-on-insulator 100%
  • Nanowires 85%
  • Silicon on insulator technology 74%
  • Heating 60%
  • Nonconductor 56%
  14 Scopus citations

• Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport

  Ryu, H., Park, H. H., Shin, M., Vasileska, D. & Klimeck, G., Mar 15 2012, In: Journal of Applied Physics. 111, 6, 063705.

  Research output: Contribution to journal › Article › peer-review

  • ballistics 100%
  • performance 45%
  • simulation 38%
  • Green's functions 34%
  • field effect transistors 32%
  8 Scopus citations

• Is self-heating responsible for the current collapse in GaN HEMTs?

  Padmanabhan, B., Vasileska, D. & Goodnick, S., Mar 2012, In: Journal of Computational Electronics. 11, 1, p. 129-136 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Heating 100%
  • Electron temperature 95%
  • High electron mobility transistors 95%
  • Electron Temperature 85%
  • high electron mobility transistors 85%
  12 Scopus citations

• Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

  Raleva, K., Vasileska, D., Hossain, A., Yoo, S. K. & Goodnick, S., Mar 2012, In: Journal of Computational Electronics. 11, 1, p. 106-117 12 p.

  Research output: Contribution to journal › Article › peer-review

  • Silicon-on-insulator 100%
  • MOSFET 84%
  • Simulator 64%
  • Heating 60%
  • simulators 49%
  11 Scopus citations
• 2011

  Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine

  Ng, G., Vasileska, D. & Schroder, D. K., Jan 2011, In: Superlattices and Microstructures. 49, 1, p. 109-115 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Band structure 100%
  • Pseudopotential 90%
  • Structure Parameter 88%
  • genetic algorithms 80%
  • Electronic Band Structure 71%
  7 Scopus citations

• Static analysis of random telegraph noise in a 45-nm channel length conventional mosfet device: Threshold voltage and ON-current fluctuations

  Ashraf, N. & Vasileska, D., Nov 2011, In: IEEE Transactions on Nanotechnology. 10, 6, p. 1394-1400 7 p., 5762614.

  Research output: Contribution to journal › Article › peer-review

  • Coulomb interactions 100%
  • Telegraph 89%
  • Threshold voltage 68%
  • Static analysis 65%
  • Doping (additives) 34%
  4 Scopus citations
• 2010

  1/f noise: Threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps

  Ashraf, N. & Vasileska, D., Dec 2010, In: Journal of Computational Electronics. 9, 3-4, p. 128-134 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Current Fluctuations 100%
  • 1/f Noise 88%
  • noise threshold 83%
  • MOSFET 68%
  • Trap 67%
  8 Scopus citations

• An effective potential approach to modeling 25 nm MOSFET devices

  Ahmed, S., Ringhofer, C. & Vasileska, D., Dec 1 2010, In: Journal of Computational Electronics. 9, 3-4, p. 197-200 4 p.

  Research output: Contribution to journal › Article › peer-review

  • MOSFET 100%
  • Boltzmann Equation 98%
  • Boltzmann equation 88%
  • Potential Barrier 77%
  • Semiconductor devices 68%
  6 Scopus citations

• Electron-phonon interaction in nanowires: A Monte Carlo study of the effect of the field

  Atanassov, E., Gurov, T., Karaivanova, A., Nedjalkov, M., Vasileska, D. & Raleva, K., Nov 2010, In: Mathematics and Computers in Simulation. 81, 3, p. 515-521 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Electron-phonon interactions 100%
  • Electron-phonon Interaction 91%
  • Nanowires 83%
  • Phonons 76%
  • Monte Carlo Study 54%
  2 Scopus citations

• Electrothermal monte carlo simulation of GaN HEMTs including electronelectron interactions

  Ashok, A., Vasileska, D., Hartin, O. L. & Goodnick, S., Mar 2010, In: IEEE Transactions on Electron Devices. 57, 3, p. 562-570 9 p., 5395682.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Monte Carlo Method 91%
  • Acoustic Phonon 75%
  • Optical Phonon 68%
  • Phonons 67%
  16 Scopus citations

• Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity

  Vasileska, D., Raleva, K. & Goodnick, S., Mar 2010, In: IEEE Transactions on Electron Devices. 57, 3, p. 726-728 3 p., 5409558.

  Research output: Contribution to journal › Article › peer-review

  • Thermal Conductivity 100%
  • Thermal conductivity 95%
  • Silicon 83%
  • Phonons 55%
  • Simulators 51%
  27 Scopus citations

• Impact of RDF and RTS on the performance of SRAM cells

  Camargo, V. V. A., Ashraf, N., Brusamarello, L., Vasileska, D. & Wirth, G., Dec 2010, In: Journal of Computational Electronics. 9, 3-4, p. 122-127 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Telegraph 100%
  • Doping (additives) 78%
  • Static random access storage 78%
  • Threshold voltage 77%
  • Fluctuations 66%
  4 Scopus citations

• The role of the source and drain contacts on self-heating effect in nanowire transistors

  Vasileska, D., Hossain, A., Raleva, K. & Goodnick, S., Dec 2010, In: Journal of Computational Electronics. 9, 3-4, p. 180-186 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Nanowires 100%
  • Heating 70%
  • Nanowire 50%
  • Transistors 49%
  • Contact 49%
  4 Scopus citations
• 2009

  1/f Noise: Threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps

  Ashraf, N. & Vasileska, D., Dec 1 2009, In: Journal of Computational Electronics. 8, 3-4, p. 128-134 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Current Fluctuations 100%
  • 1/f Noise 88%
  • noise threshold 83%
  • MOSFET 68%
  • Trap 67%
  3 Scopus citations

• An effective potential approach to modeling 25 nm MOSFET devices

  Ahmed, S., Ringhofer, C. & Vasileska, D., Dec 1 2009, In: Journal of Computational Electronics. 8, 3-4, p. 197-200 4 p.

  Research output: Contribution to journal › Article › peer-review

  • MOSFET 100%
  • Boltzmann Equation 98%
  • Boltzmann equation 88%
  • Potential Barrier 77%
  • Semiconductor devices 68%
  3 Scopus citations

• Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiC

  Ng, G., Vasileska, D. & Schroder, D. K., 2009, In: Journal of Applied Physics. 106, 5, 053719.

  Research output: Contribution to journal › Article › peer-review

  • scattering 100%
  • electrons 82%
  • Boltzmann transport equation 49%
  • contraction 37%
  • phonons 26%
  19 Scopus citations

• Computational nanoelectronics research and education at nanoHUB.org

  Haley, B. P., Klimeck, G., Luisier, M., Vasileska, D., Paul, A., Shivarajapura, S. & Beaudoin, D. L., 2009, In: Journal of Computational Electronics. 8, 2, p. 124-131 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Nanoelectronics 100%
  • Education 59%
  • education 53%
  • Simulation 34%
  • Quantum Transport 30%
  3 Scopus citations

• Impact of RDF and RTS on the performance of SRAM cells

  Camargo, V. V. A., Ashraf, N., Brusamarello, L., Vasileska, D. & Wirth, G., Dec 1 2009, In: Journal of Computational Electronics. 8, 3-4, p. 122-127 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Telegraph 100%
  • Doping (additives) 78%
  • Static random access storage 78%
  • Threshold voltage 77%
  • Fluctuations 66%
  1 Scopus citations

• Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

  Ashok, A., Vasileska, D., Goodnick, S. & Hartin, O. L., Mar 27 2009, In: IEEE Transactions on Electron Devices. 56, 5, p. 998-1006 9 p.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Polarization 78%
  • Charge density 40%
  • Electric potential 29%
  • Electrons 29%
  20 Scopus citations

• Modeling self-heating effects in nanoscale SOI devices

  Vasileska, D., Goodnick, S. & Raleva, K., 2009, In: Journal of Physics: Conference Series. 193, 012036.

  Research output: Contribution to journal › Article › peer-review

  • insulators 100%
  • heating 85%
  • silicon 73%
  • simulators 53%
  • boundary conditions 38%
  2 Scopus citations

• Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX

  Vasileska, D., Raleva, K. & Goodnick, S., Dec 2009, In: IEEE Transactions on Electron Devices. 56, 12, p. 3064-3071 8 p., 5306154.

  Research output: Contribution to journal › Article › peer-review

  • Diamond 100%
  • Dielectric Material 92%
  • Silicon 82%
  • Boundary conditions 80%
  • Heating 75%
  48 Scopus citations