Research Output per year
Research Output 1993 2019
- 1 - 50 out of 167 results
- Publication Year, Title (descending)
2019
Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells
Muralidharan, P., Goodnick, S. & Vasileska, D., Jan 1 2019, In : Journal of Computational Electronics.Research output: Contribution to journal › Article
Kinetic Monte Carlo
Amorphous Silicon
Passivation
Heterojunction
Silicon
Phonon Dissipation in Nanostructured Semiconductor Devices
Mohamed, M. Y., Raleva, K., Ravaioli, U., Vasileska, D. & Aksamija, Z., Jan 1 2019, In : IEEE Nanotechnology Magazine.Research output: Contribution to journal › Article
Timing circuits
Semiconductor devices
Integrated circuits
Transistors
Photolithography
Phonon-limited mobility modeling of gallium nitride nanowires
Kumar, V. N. & Vasileska, D., Mar 21 2019, In : Journal of Applied Physics. 125, 11, 114301.Research output: Contribution to journal › Article
Open Access
gallium nitrides
nanowires
scattering
electron phonon interactions
electron mobility
2018
1
Citation
(Scopus)
Hole transport in selenium semiconductors using density functional theory and bulk Monte Carlo
Mukherjee, A., Vasileska, D. & Goldan, A. H., Dec 21 2018, In : Journal of Applied Physics. 124, 23, 235102.Research output: Contribution to journal › Article
selenium
density functional theory
avalanches
Boltzmann transport equation
electric fields
2017
3
Citations
(Scopus)
The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs
Kannan, G. & Vasileska, D., Sep 21 2017, In : Journal of Applied Physics. 122, 11, 114303.Research output: Contribution to journal › Article
electron mobility
surface roughness
field effect transistors
scattering
Born approximation
2016
9
Citations
(Scopus)
Numerical Simulation of Copper Migration in Single Crystal CdTe
Guo, D., Fang, T., Moore, A., Brinkman, D., Akis, R., Krasikov, D., Sankin, I., Ringhofer, C. & Vasileska, D., Jun 15 2016, (Accepted/In press) In : IEEE Journal of Photovoltaics.Research output: Contribution to journal › Article
Copper
Doping (additives)
Single crystals
absorbers (materials)
copper
2
Citations
(Scopus)
Special issue: electrothermal and thermoelectric modeling of nanoscale devices
Vasileska, D. & Raleva, K., Mar 1 2016, In : Journal of Computational Electronics. 15, 1, p. 1-2 2 p.Research output: Contribution to journal › Article
Modeling
2015
3
Citations
(Scopus)
A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells
Muralidharan, P., Vasileska, D., Goodnick, S. & Bowden, S., Nov 1 2015, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 9-11, p. 1198-1200 3 p.Research output: Contribution to journal › Article
heterojunctions
solar cells
amorphous silicon
defects
kinetics
14
Citations
(Scopus)
Self-consistent simulation of CdTe solar cells with active defects
Brinkman, D., Guo, D., Akis, R., Ringhofer, C., Sankin, I., Fang, T. & Vasileska, D., Jul 21 2015, In : Journal of Applied Physics. 118, 3, 035704.Research output: Contribution to journal › Article
solar cells
copper
defects
cadmium tellurides
simulation
2014
2
Citations
(Scopus)
1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator
Both, T. H., Wirth, G. I. & Vasileska, D., Dec 24 2014, (Accepted/In press) In : Journal of Computational Electronics.Research output: Contribution to journal › Article
1/f Noise
MOSFET
SPICE
Fermi level
simulators
2013
Current degradation due to electromechanical coupling in GaN HEMT's
Padmanabhan, B., Vasileska, D. & Goodnick, S., Jul 2013, In : Microelectronics Journal. 44, 7, p. 592-597 6 p.Research output: Contribution to journal › Article
Electromechanical coupling
High electron mobility transistors
high electron mobility transistors
Polarization
degradation
4
Citations
(Scopus)
Modeling thermal effects in nano-devices
Vasileska, D., 2013, In : Microelectronic Engineering. 109, p. 163-167 5 p.Research output: Contribution to journal › Article
Thermal effects
temperature effects
Heat generation
Silicon
Temperature control
19
Citations
(Scopus)
Physical scales in the Wigner-Boltzmann equation
Nedjalkov, M., Selberherr, S., Ferry, D. K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I. & Schwaha, P., Jan 2013, In : Annals of Physics. 328, p. 220-237 18 p.Research output: Contribution to journal › Article
oscillators
particle theory
harmonic oscillators
phonons
theorems
2
Citations
(Scopus)
Reliability concerns due to self-heating effects in GaN HEMTs
Padmanabhan, B., Vasileska, D. & Goodnick, S., Sep 2013, In : Journal of Integrated Circuits and Systems. 8, 2, p. 78-82 5 p.Research output: Contribution to journal › Article
Electrostatic devices
High electron mobility transistors
Heating
3
Citations
(Scopus)
The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices
Raleva, K. & Vasileska, D., Dec 2013, In : Journal of Computational Electronics. 12, 4, p. 601-610 10 p.Research output: Contribution to journal › Article
SOI (semiconductors)
Thermal Conductivity
Heating
Thermal conductivity
thermal conductivity
Tool-based curricula and visual learning
Vasileska, D., Klimeck, G., Magana, A. & Goodnick, S., Dec 2013, In : Electronics. 17, 2, p. 95-104 10 p.Research output: Contribution to journal › Article
Curricula
Students
Nanotechnology
Quantum theory
Nanoelectronics
31
Citations
(Scopus)
Wigner quasi-particle attributes-An asymptotic perspective
Nedjalkov, M., Schwaha, P., Selberherr, S., Sellier, J. M. & Vasileska, D., Apr 22 2013, In : Applied Physics Letters. 102, 16, 163113.Research output: Contribution to journal › Article
elementary excitations
integral equations
quantum mechanics
grids
momentum
2012
10
Citations
(Scopus)
Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants
Wirth, G., Vasileska, D., Ashraf, N., Brusamarello, L., Della Giustina, R. & Srinivasan, P., Dec 2012, In : Microelectronics Reliability. 52, 12, p. 2955-2961 7 p.Research output: Contribution to journal › Article
Telegraph
Doping (additives)
traps
methodology
simulation
12
Citations
(Scopus)
Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
Vasileska, D., Raleva, K., Hossain, A. & Goodnick, S., Sep 2012, In : Journal of Computational Electronics. 11, 3, p. 238-248 11 p.Research output: Contribution to journal › Article
Silicon on insulator technology
Silicon-on-insulator
Nanowires
Heating
Transistors
8
Citations
(Scopus)
Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport
Ryu, H., Park, H. H., Shin, M., Vasileska, D. & Klimeck, G., Mar 15 2012, In : Journal of Applied Physics. 111, 6, 063705.Research output: Contribution to journal › Article
ballistics
simulation
Green's functions
field effect transistors
recursive functions
10
Citations
(Scopus)
Is self-heating responsible for the current collapse in GaN HEMTs?
Padmanabhan, B., Vasileska, D. & Goodnick, S., Mar 2012, In : Journal of Computational Electronics. 11, 1, p. 129-136 8 p.Research output: Contribution to journal › Article
High electron mobility transistors
high electron mobility transistors
Heating
Electron temperature
Electron
9
Citations
(Scopus)
Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator
Raleva, K., Vasileska, D., Hossain, A., Yoo, S. K. & Goodnick, S., Mar 2012, In : Journal of Computational Electronics. 11, 1, p. 106-117 12 p.Research output: Contribution to journal › Article
Silicon-on-insulator
MOSFET
Silicon
simulators
Heating
2011
10
Citations
(Scopus)
Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants
Ashraf, N., Vasileska, D., Wirth, G. & Srinivasan, P., Aug 2011, In : IEEE Electron Device Letters. 32, 8, p. 1044-1046 3 p., 5930325.Research output: Contribution to journal › Article
MOSFET devices
Threshold voltage
Analytical models
Doping (additives)
2
Citations
(Scopus)
Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine
Ng, G., Vasileska, D. & Schroder, D. K., Jan 2011, In : Superlattices and Microstructures. 49, 1, p. 109-115 7 p.Research output: Contribution to journal › Article
genetic algorithms
Band structure
pseudopotentials
Genetic algorithms
Energy gap
4
Citations
(Scopus)
Static analysis of random telegraph noise in a 45-nm channel length conventional mosfet device: Threshold voltage and ON-current fluctuations
Ashraf, N. & Vasileska, D., Nov 2011, In : IEEE Transactions on Nanotechnology. 10, 6, p. 1394-1400 7 p., 5762614.Research output: Contribution to journal › Article
Telegraph
Static analysis
Coulomb interactions
Threshold voltage
Doping (additives)
2010
8
Citations
(Scopus)
1/f noise: Threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps
Ashraf, N. & Vasileska, D., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 128-134 7 p.Research output: Contribution to journal › Article
noise threshold
Current Fluctuations
1/f Noise
Threshold voltage
Trap
6
Citations
(Scopus)
An effective potential approach to modeling 25 nm MOSFET devices
Ahmed, S., Ringhofer, C. & Vasileska, D., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 197-200 4 p.Research output: Contribution to journal › Article
MOSFET
Boltzmann equation
Effective Potential
MOSFET devices
Semiconductor devices
2
Citations
(Scopus)
Electron-phonon interaction in nanowires: A Monte Carlo study of the effect of the field
Atanassov, E., Gurov, T., Karaivanova, A., Nedjalkov, M., Vasileska, D. & Raleva, K., Nov 2010, In : Mathematics and Computers in Simulation. 81, 3, p. 515-521 7 p.Research output: Contribution to journal › Article
Electron-phonon Interaction
Electron-phonon interactions
Nanowires
Monte Carlo Study
Boltzmann equation
16
Citations
(Scopus)
Electrothermal monte carlo simulation of GaN HEMTs including electronelectron interactions
Ashok, A., Vasileska, D., Hartin, O. L. & Goodnick, S., Mar 2010, In : IEEE Transactions on Electron Devices. 57, 3, p. 562-570 9 p., 5395682.Research output: Contribution to journal › Article
High electron mobility transistors
Simulators
Phonons
Energy balance
Thermal effects
24
Citations
(Scopus)
Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity
Vasileska, D., Raleva, K. & Goodnick, S., Mar 2010, In : IEEE Transactions on Electron Devices. 57, 3, p. 726-728 3 p., 5409558.Research output: Contribution to journal › Article
Silicon
Thermal conductivity
Simulators
Temperature
Scattering
3
Citations
(Scopus)
Impact of RDF and RTS on the performance of SRAM cells
Camargo, V. V. A., Ashraf, N., Brusamarello, L., Vasileska, D. & Wirth, G., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 122-127 6 p.Research output: Contribution to journal › Article
Telegraph
Static random access storage
Threshold voltage
Doping (additives)
Normal distribution
3
Citations
(Scopus)
The role of the source and drain contacts on self-heating effect in nanowire transistors
Vasileska, D., Hossain, A., Raleva, K. & Goodnick, S., Dec 2010, In : Journal of Computational Electronics. 9, 3-4, p. 180-186 7 p.Research output: Contribution to journal › Article
Nanowires
Heating
Transistors
nanowires
transistors
2009
1
Citation
(Scopus)
1/f Noise: Threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps
Ashraf, N. & Vasileska, D., Dec 2009, In : Journal of Computational Electronics. 8, 3-4, p. 128-134 7 p.Research output: Contribution to journal › Article
noise threshold
Current Fluctuations
1/f Noise
Threshold voltage
Trap
An effective potential approach to modeling 25 nm MOSFET devices
Ahmed, S., Ringhofer, C. & Vasileska, D., Dec 2009, In : Journal of Computational Electronics. 8, 3-4, p. 197-200 4 p.Research output: Contribution to journal › Article
MOSFET
Boltzmann equation
Effective Potential
MOSFET devices
Semiconductor devices
17
Citations
(Scopus)
Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiC
Ng, G., Vasileska, D. & Schroder, D. K., 2009, In : Journal of Applied Physics. 106, 5, 053719.Research output: Contribution to journal › Article
scattering
electrons
Boltzmann transport equation
contraction
acoustics
2
Citations
(Scopus)
Computational nanoelectronics research and education at nanoHUB.org
Haley, B. P., Klimeck, G., Luisier, M., Vasileska, D., Paul, A., Shivarajapura, S. & Beaudoin, D. L., 2009, In : Journal of Computational Electronics. 8, 2, p. 124-131 8 p.Research output: Contribution to journal › Article
Nanoelectronics
education
Education
Simulator
simulators
24
Citations
(Scopus)
Diffusive transport in quasi-2D and quasi-1D electron systems
Knezevic, I., Ramayya, E. B., Vasileska, D. & Goodnick, S., 2009, In : Journal of Computational and Theoretical Nanoscience. 6, 8, p. 1725-1753 29 p.Research output: Contribution to journal › Article
Scattering
Electron
Semiconductor materials
Boltzmann transport equation
Electrons
1
Citation
(Scopus)
Impact of RDF and RTS on the performance of SRAM cells
Camargo, V. V. A., Ashraf, N., Brusamarello, L., Vasileska, D. & Wirth, G., Dec 2009, In : Journal of Computational Electronics. 8, 3-4, p. 122-127 6 p.Research output: Contribution to journal › Article
Telegraph
Static random access storage
Threshold voltage
Doping (additives)
Normal distribution
16
Citations
(Scopus)
Importance of the gate-dependent polarization charge on the operation of GaN HEMTs
Ashok, A., Vasileska, D., Goodnick, S. & Hartin, O. L., 2009, In : IEEE Transactions on Electron Devices. 56, 5, p. 998-1006 9 p.Research output: Contribution to journal › Article
High electron mobility transistors
Polarization
Electric potential
Charge density
Simulators
2
Citations
(Scopus)
Modeling self-heating effects in nanoscale SOI devices
Vasileska, D., Goodnick, S. & Raleva, K., 2009, In : Journal of Physics: Conference Series. 193, 012036.Research output: Contribution to journal › Article
insulators
heating
silicon
simulators
boundary conditions
Preface
Jacobi, R., Vasileska, D. & Wirth, G., 2009, In : Unknown Journal. 49, 1Research output: Contribution to journal › Article
45
Citations
(Scopus)
Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX
Vasileska, D., Raleva, K. & Goodnick, S., Dec 2009, In : IEEE Transactions on Electron Devices. 56, 12, p. 3064-3071 8 p., 5306154.Research output: Contribution to journal › Article
Silicon
Boundary conditions
Heating
Degradation
Diamond
The role of the source and drain contacts on self-heating effect in nanowire transistors
Vasileska, D., Hossain, A., Raleva, K. & Goodnick, S., Dec 2009, In : Journal of Computational Electronics. 8, 3-4, p. 180-186 7 p.Research output: Contribution to journal › Article
Nanowires
Heating
Transistors
nanowires
transistors
2008
7
Citations
(Scopus)
3D NEGF quantum transport simulator for modeling ballistic transport in nano FinFETs
Khan, H. R., Mamaluy, D. & Vasileska, D., Mar 1 2008, In : Journal of Physics: Conference Series. 107, 1, 012007.Research output: Contribution to journal › Article
ballistics
simulators
Green's functions
formalism
engineering
22
Citations
(Scopus)
Approaching optimal characteristics of 10-nm high-performance devices: A quantum transport simulation study of Si FinFET
Khan, H. R., Mamaluy, D. & Vasileska, D., Mar 2008, In : IEEE Transactions on Electron Devices. 55, 3, p. 743-753 11 p.Research output: Contribution to journal › Article
Semiconductor materials
simulation
Quantum confinement
Simulators
simulators
Can silicon FinFETs satisfy ITRS projections for high performance 10 nm devices?
Khan, H., Mamaluy, D. & Vasileska, D., 2008, In : Journal of Computational Electronics. 7, 3, p. 284-287 4 p.Research output: Contribution to journal › Article
Signal analysis
Silicon
Oxides
High Performance
Simulators
10
Citations
(Scopus)
Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires
Ramayya, E. B., Vasileska, D., Goodnick, S. & Knezevic, I., 2008, In : Journal of Computational Electronics. 7, 3, p. 319-323 5 p.Research output: Contribution to journal › Article
Silicon Nanowires
Electron mobility
Silicon
Phonon
Thermal Conductivity
146
Citations
(Scopus)
Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering
Ramayya, E. B., Vasileska, D., Goodnick, S. & Knezevic, I., 2008, In : Journal of Applied Physics. 104, 6, 063711.Research output: Contribution to journal › Article
surface roughness
nanowires
roughness
electron mobility
acoustics
3
Citations
(Scopus)
Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs
Khan, H., Mamaluy, D. & Vasileska, D., 2008, In : Journal of Computational Electronics. 7, 3, p. 346-349 4 p.Research output: Contribution to journal › Article
Quantum Transport
fins
Doping (additives)
Simulation
simulation
28
Citations
(Scopus)
Is SOD technology the solution to heating problems in SOI devices?
Raleva, K., Vasileska, D. & Goodnick, S., Jun 2008, In : IEEE Electron Device Letters. 29, 6, p. 621-624 4 p.Research output: Contribution to journal › Article
Heat problems
Diamond
Diamonds
Silicon
Thermal conductivity