David Smith

2023

Anisotropic electrical properties of NiO_x /β-Ga₂O₃ p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Mudiyanselage, D. H., Mandia, R., Wang, D., Adivarahan, J., He, Z., Fu, K., Zhao, Y., McCartney, M., Smith, D. J. & Fu, H., Sep 1 2023, In: Applied Physics Express. 16, 9, 094002.

Research output: Contribution to journal › Article › peer-review

Open Access

1 Scopus citations

Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange

Messina, D. C., Hatch, K. A., Vishwakarma, S., Smith, D. J., Zhao, Y. & Nemanich, R. J., Mar 2023, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 41, 2, 022603.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Extended defects in GaAs/GaAs_1-xSb_x/GaAs (001) heterostructures

Gangopadhyay, A., Zhang, C., Maros, A., Faleev, N., King, R. R., Honsberg, C. B. & Smith, D. J., Mar 1 2023, In: Scripta Materialia. 225, 115150.

Research output: Contribution to journal › Article › peer-review

Open Access

1 Scopus citations

Growth of Cubic Boron Nitride/Diamond Heterostructures: Surface Preparation and Film Nucleation

Vishwakarma, S., Patel, A., Gutierrez, M. R., Nemanich, R. J. & Smith, D. J., Jul 22 2023, In: Microscopy and Microanalysis. 29, 1, p. 1777-1778 2 p.

Research output: Contribution to journal › Article › peer-review

Open Access

Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes

Peri, P., Fu, K., Fu, H., Zhou, J., Zhao, Y. & Smith, D. J., May 2023, In: Journal of Electronic Materials. 52, 5, p. 3343-3351 9 p.

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Interlayer Engineering to Achieve <1 m²K/GW Thermal Boundary Resistances to Diamond for Effective Device Cooling

Woo, K., Malakoutian, M., Jo, Y., Zheng, X., Pfeifer, T., Mandia, R., Hwang, T., Aller, H., Field, D., Kasperovich, A., Saraswat, D., Smith, D., Hopkins, P., Graham, S., Kuball, M., Cho, K. & Chowdhury, S., 2023, 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Brown, J. M., Vishwakarma, S., Smith, D. J. & Nemanich, R. J., Jun 7 2023, In: Journal of Applied Physics. 133, 21, 215303.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Optical and acoustic phonons in turbostratic and cubic boron nitride thin films on diamond substrates

Guzman, E., Kargar, F., Patel, A., Vishwakarma, S., Wright, D., Wilson, R. B., Smith, D. J., Nemanich, R. J. & Balandin, A. A., Dec 2023, In: Diamond and Related Materials. 140, 110452.

Research output: Contribution to journal › Article › peer-review

Open Access

2 Scopus citations

Preface to special section on imaging, diffraction and crystallography – John Spence's legacy

Smith, D. J., Aug 2023, In: Ultramicroscopy. 250, 113758.

Research output: Contribution to journal › Editorial › peer-review

Subtractive Engineering of Polymer Cladding Induces Tunable UV-C Irradiation from Flexible Side-Emitting Optical Fibers for Biofilm Control in Curved Piping

Zhao, Z., Shapiro, N. D., Mobasher, B., Wang, T. H., Smith, D., Sinha, S., Ling, L., Perreault, F. & Westerhoff, P., Nov 10 2023, In: ACS ES and T Engineering. 3, 11, p. 2071-2080 10 p.

Research output: Contribution to journal › Article › peer-review

2022

Compositional Control and Optimization of Molecular Beam Epitaxial Growth of (Sb₂Te₃)_{1- x}(MnSb₂Te₄)_xMagnetic Topological Insulators

Levy, I., Forrester, C., Deng, H., Roldan-Gutierrez, M., McCartney, M., Smith, D. J., Testelin, C., Krusin-Elbaum, L. & Tamargo, M. C., May 4 2022, In: Crystal Growth and Design. 22, 5, p. 3007-3015 9 p.

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Comprehensive, in operando, and correlative investigation of defects and their impact on device performance

Zhang, Y. & Smith, D. J., Apr 2022, In: Journal of Semiconductors. 43, 4, 041102.

Research output: Contribution to journal › Review article › peer-review

2 Scopus citations

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates

Pan, W. W., Gu, R. J., Zhang, Z. K., Lei, W., Umana-Membreno, G. A., Smith, D. J., Antoszewski, J. & Faraone, L., 2022, (Accepted/In press) In: Journal of Electronic Materials.

Research output: Contribution to journal › Article › peer-review

Open Access

7 Scopus citations

Epitaxial growth of β-Ga₂O₃on SrTiO₃(001) and SrTiO₃-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

Hadamek, T., Posadas, A. B., Al-Quaiti, F., Smith, D. J., McCartney, M. R., Dombrowski, E. & Demkov, A. A., Apr 14 2022, In: Journal of Applied Physics. 131, 14, 145702.

Research output: Contribution to journal › Article › peer-review

Open Access

7 Scopus citations

Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting

Park, S., McCartney, M., Smith, D. J., Jeon, J., Kim, Y. & Lee, S. J., May 26 2022, In: Journal of Materials Chemistry A. 10, 24, p. 13106-13113 8 p.

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Properties for Thermally Conductive Interfaces with Wide Band Gap Materials

Khan, S., Angeles, F., Wright, J., Vishwakarma, S., Ortiz, V. H., Guzman, E., Kargar, F., Balandin, A. A., Smith, D. J., Jena, D., Xing, H. G. & Wilson, R., Aug 10 2022, In: ACS Applied Materials and Interfaces. 14, 31, p. 36178-36188 11 p.

Research output: Contribution to journal › Article › peer-review

Open Access

7 Scopus citations

2021

Atomic-Resolution Structure Imaging of Misfit Dislocations at Heterovalent II-VI/III-V Interfaces

McKeon, B. S., Liu, X., Furdyna, J. K. & Smith, D. J., Jun 22 2021, In: ACS Applied Electronic Materials. 3, 6, p. 2573-2579 7 p.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices

Peri, P., Fu, K., Fu, H., Zhao, Y. & Smith, D. J., May 2021, In: Journal of Electronic Materials. 50, 5, p. 2637-2642 6 p.

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures

Pramanik, P., Sen, S., Singha, C., Bhattacharyya, A., Zhou, L. & Smith, D. J., Aug 1 2021, In: AIP Advances. 11, 8, 085109.

Research output: Contribution to journal › Article › peer-review

Open Access

5 Scopus citations

Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor with Ultra-Low Subthreshold Swing

Yang, C., Fu, H., Peri, P., Fu, K., Yang, T. H., Zhou, J., Montes, J., Smith, D. J. & Zhao, Y., Aug 2021, In: IEEE Electron Device Letters. 42, 8, p. 1128-1131 4 p., 9464223.

Research output: Contribution to journal › Article › peer-review

Open Access

18 Scopus citations

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Zhang, Y. H. & Smith, D. J., May 1 2021, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 39, 3, 030803.

Research output: Contribution to journal › Review article › peer-review

Open Access

13 Scopus citations

Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects

Chen, Q., McKeon, B. S., Zhang, S. Y., Zhang, F., Hu, C., Gfroerer, T. H., Wanlass, M. W., Smith, D. J. & Zhang, Y., Jan 18 2021, In: Advanced Optical Materials. 9, 2, 2001487.

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures

Boley, A., Luna, E., Zhang, C., Faleev, N., Honsberg, C. B. & Smith, D. J., May 15 2021, In: Journal of Crystal Growth. 562, 126059.

Research output: Contribution to journal › Article › peer-review

Open Access

1 Scopus citations

Radiation tolerance of GaAs_1-xSb_xsolar cells: A candidate III-V system for space applications

Ashfari, H., Durant, B. K., Thrasher, T., Abshire, L., Whiteside, V. R., Chan, S., Kim, D., Hatch, S., Tang, M., McNatt, J. S., Liu, H., McCartney, M. R., Smith, D. J. & Sellers, I. R., Jun 20 2021, 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., p. 680-682 3 p. (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Radiation tolerance of GaAs_1-xSb_x solar cells

Afshari, H., Durant, B. K., Thrasher, T., Abshire, L., Whiteside, V. R., Chan, S., Kim, D., Hatch, S., Tang, M., McNatt, J. S., Liu, H., McCartney, M., Smith, D. J. & Sellers, I. R., Dec 2021, In: Solar Energy Materials and Solar Cells. 233, 111352.

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

Fu, H., Fu, K., Yang, C., Liu, H., Hatch, K. A., Peri, P., Herath Mudiyanselage, D., Li, B., Kim, T. H., Alugubelli, S. R., Su, P. Y., Messina, D. C., Deng, X., Cheng, C. Y., Vatan Meidanshahi, R., Huang, X., Chen, H., Yang, T. H., Zhou, J., Armstrong, A. M., & 8 othersAllerman, A. A., Yu, E. T., Han, J., Goodnick, S. M., Smith, D. J., Nemanich, R. J., Ponce, F. A. & Zhao, Y., Oct 2021, In: Materials Today. 49, p. 296-323 28 p.

Research output: Contribution to journal › Review article › peer-review

Open Access

22 Scopus citations

Synchrotron X-ray diffraction observation of phase transformation during annealing of Si processed by high-pressure torsion

Ikoma, Y., Yamasaki, T., Masuda, T., Tange, Y., Higo, Y., Ohishi, Y., McCartney, M. R., Smith, D. J. & Horita, Z., 2021, In: Philosophical Magazine Letters. 101, 6, p. 223-231 9 p.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Fu, K., Fu, H., Deng, X., Su, P. Y., Liu, H., Hatch, K., Cheng, C. Y., Messina, D., Meidanshahi, R. V., Peri, P., Yang, C., Yang, T. H., Montes, J., Zhou, J., Qi, X., Goodnick, S. M., Ponce, F. A., Smith, D. J., Nemanich, R. & Zhao, Y., May 31 2021, In: Applied Physics Letters. 118, 22, 222104.

Research output: Contribution to journal › Article › peer-review

Open Access

16 Scopus citations

The role of one-dimensional magnetic nanoprecipitates on the magnetoresistance of soft magnetic alloys: Study of a melt-spun Cu–Co alloy

Suguihiro, N. M., Torres, W. S., Nunes, W. C., Saitovitch, E. B., Mc Cartney, M. R., Smith, D. J., Costa, A. M. L. M. & Solórzano, I. G., Jul 1 2021, In: Materials Chemistry and Physics. 266, 124517.

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Unraveling the structural and electronic properties of strained PbSe on GaAs

Liu, X., Wang, J., Riney, L., Bac, S. K., Smith, D. J., McCartney, M. R., Khan, I., Hoffman, A. J., Dobrowolska, M., Furdyna, J. K. & Assaf, B. A., Sep 15 2021, In: Journal of Crystal Growth. 570, 126235.

Research output: Contribution to journal › Article › peer-review

Open Access

6 Scopus citations

β-Ga₂O₃on Si (001) grown by plasma-assisted MBE with γ-Al₂O₃(111) buffer layer: Structural characterization

Hadamek, T., Posadas, A. B., Al-Quaiti, F., Smith, D. J., McCartney, M. R. & Demkov, A. A., Apr 1 2021, In: AIP Advances. 11, 4, 045209.

Research output: Contribution to journal › Article › peer-review

Open Access

22 Scopus citations

2020

A hyperspectral unmixing framework for energy-loss near-edge structure analysis

Lu, S. & Smith, D. J., Nov 2020, In: Ultramicroscopy. 218, 113096.

Research output: Contribution to journal › Article › peer-review

Open Access

2 Scopus citations

Annealing Effects on the Band Alignment of ALD SiO₂ on (In_xGa_1-x)₂O₃ for x = 0.25-0.74

Fares, C., Xian, M., Smith, D. J., McCartney, M. R., Kneiß, M., Von Wenckstern, H., Grundmann, M., Tadjer, M., Ren, F. & Pearton, S. J., Jan 5 2020, In: ECS Journal of Solid State Science and Technology. 9, 4, 045001.

Research output: Contribution to journal › Article › peer-review

Open Access

Approaches to Phase Imaging in the Electron Microscope

Smith, D., 2020, (Accepted/In press) In: Microscopy and Microanalysis. 601.

Research output: Contribution to journal › Article › peer-review

Open Access

Atomic-resolution structure imaging of defects and interfaces in compound semiconductors

Smith, D. J., Nov 2020, In: Progress in Crystal Growth and Characterization of Materials. 66, 4, 100498.

Research output: Contribution to journal › Review article › peer-review

15 Scopus citations

Changes in band alignment during annealing at 600 °c of ALD Al₂O₃ on (In_xGa_{1 - X})₂O₃ for x = 0.25-0.74

Fares, C., Xian, M., Smith, D. J., McCartney, M. R., Kneiß, M., Von Wenckstern, H., Grundmann, M., Tadjer, M., Ren, F. & Pearton, S. J., Mar 14 2020, In: Journal of Applied Physics. 127, 10, 105701.

Research output: Contribution to journal › Article › peer-review

Open Access

6 Scopus citations

Dielectric breakdown in epitaxial BaTiO₃thin films

Wu, H., Ponath, P., Lin, E. L., Wallace, R. M., Young, C., Ekerdt, J. G., Demkov, A. A., McCartney, M. R. & Smith, D. J., Jul 1 2020, In: Journal of Vacuum Science and Technology B. 38, 4, 0000237.

Research output: Contribution to journal › Article › peer-review

Open Access

3 Scopus citations

Direct Observation of Large Atomic Polar Displacements in Epitaxial Barium Titanate Thin Films

Wu, H. W., Lu, S., Aoki, T., Ponath, P., Wang, J., Young, C., Ekerdt, J. G., McCartney, M. R. & Smith, D. J., Aug 1 2020, In: Advanced Materials Interfaces. 7, 16, 2000555.

Research output: Contribution to journal › Article › peer-review

Open Access

9 Scopus citations

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²

Cornuelle, E. M., Growden, T. A., Storm, D. F., Brown, E. R., Zhang, W., Downey, B. P., Gokhale, V., Ruppalt, L. B., Champlain, J. G., Peri, P., McCartney, M. R., Smith, D. J., Meyer, D. J. & Berger, P. R., May 1 2020, In: AIP Advances. 10, 5, 055307.

Research output: Contribution to journal › Article › peer-review

Open Access

6 Scopus citations

Formation of metastable bc8 phase from crystalline Si_0.5Ge_0.5 by high-pressure torsion

Ikoma, Y., Yamasaki, T., Shimizu, T., Takaira, M., Kohno, M., Guo, Q., McCartney, M. R., Smith, D. J., Arai, Y. & Horita, Z., Nov 2020, In: Materials Characterization. 169, 110590.

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Investigation of polycrystalline Ga_xIn_1-xP for potential use as a solar cell absorber with tunable bandgap

Chikhalkar, A., Gangopadhyay, A., Liu, H., Zhang, C., Ponce, F. A., Smith, D. J., Honsberg, C. & King, R. R., Feb 21 2020, In: Journal of Applied Physics. 127, 7, 073102.

Research output: Contribution to journal › Article › peer-review

Open Access

3 Scopus citations

Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes

Peri, P. R., Hatch, K., Messina, D., Fu, K., Zhao, Y., Nemanich, R. & Smith, D., 2020, (Accepted/In press) In: Microscopy and Microanalysis. p. 840-842 3 p.

Research output: Contribution to journal › Comment/debate › peer-review

Open Access

1 Scopus citations

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Fu, K., Zhou, J., Deng, X., Qi, X., Smith, D. J., Goodnick, S. M., Zhao, Y., Fu, H., Huang, X., Yang, T. H., Cheng, C. Y., Peri, P. R., Chen, H., Montes, J. & Yang, C., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 74-83 10 p., 8949530.

Research output: Contribution to journal › Article › peer-review

Open Access

45 Scopus citations

Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb

Luna, E., Trampert, A., Lu, J., Aoki, T., Zhang, Y. H., McCartney, M. R. & Smith, D. J., Feb 1 2020, In: Advanced Materials Interfaces. 7, 3, 1901658.

Research output: Contribution to journal › Article › peer-review

Open Access

10 Scopus citations

Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure

Peri, P., Fu, K., Fu, H., Zhao, Y. & Smith, D. J., Dec 1 2020, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 38, 6, 063402.

Research output: Contribution to journal › Article › peer-review

Open Access

4 Scopus citations

2019

⁶⁰Co gamma ray damage in homoepitaxial β-Ga₂O₃ Schottky rectifiers

Yang, J., Koller, G. J., Fares, C., Ren, F., Pearton, S. J., Bae, J., Kim, J. & Smith, D., 2019, In: ECS Journal of Solid State Science and Technology. 8, 7, p. Q3041-Q3045

Research output: Contribution to journal › Article › peer-review

Open Access

18 Scopus citations

Comparison of high voltage, vertical geometry Ga₂O₃ rectifiers with GaN and SiC

Yang, J. C., Fares, C., Carey, P. H., Man, M., Ren, F., Tadjer, M., Chen, Y. T., Liao, Y. T., Chang, C. W., Lin, J., Sharma, R., Law, M. E., Raad, P. E., Komarov, P. L., Smith, D. J., Kuramata, A. & Pearton, S. J., 2019, Gallium Nitride and Silicon Carbide Power Technologies 9. Dudley, M., Raghothamachar, B., Ohtani, N., Bakowski, M. & Shenai, K. (eds.). 7 ed. Electrochemical Society Inc., p. 15-24 10 p. (ECS Transactions; vol. 92, no. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga₂O₃

Tadjer, M. J., Fares, C., Mahadik, N. A., Freitas, J. A., Smith, D., Sharma, R., Law, M. E., Ren, F., Pearton, S. J. & Kuramata, A., 2019, In: ECS Journal of Solid State Science and Technology. 8, 7, p. Q3133-Q3139

Research output: Contribution to journal › Article › peer-review

Open Access

30 Scopus citations

DC and dynamic switching characteristics of field-plated vertical geometry β-Ga₂O₃ rectifiers

Yang, J., Carey, P., Ren, F., Chen, Y. T., Liao, Y., Chang, C. W., Lin, J., Tadjer, M., Pearton, S. J., Smith, D. J. & Kuramata, A., 2019, Oxide-Based Materials and Devices X. Look, D. C., Teherani, F. H. & Rogers, D. J. (eds.). SPIE, 1091916. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10919).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Defects at the surface of β -Ga₂O₃ produced by Ar plasma exposure

Polyakov, A. Y., Lee, I. H., Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., Kochkova, A. I., Vasilev, A. A., Carey, P. H., Ren, F., Smith, D. J. & Pearton, S. J., Jun 1 2019, In: APL Materials. 7, 6, 061102.

Research output: Contribution to journal › Article › peer-review

Open Access

37 Scopus citations

David Smith

Research output

Search results