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Research Output 1986 2019

  • 2719 Citations
  • 24 h-Index
  • 157 Conference contribution
  • 104 Article
  • 2 Chapter
  • 2 Patent
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Article
2019

Silicon Nitride Barrier Layers Mitigate Minority-Carrier Lifetime Degradation in Silicon Wafers during Simulated MBE Growth of III-V Layers

Zhang, C., Ding, L., Boccard, M., Narland, T. U., Faleev, N., Bowden, S., Bertoni, M., Honsberg, C. & Holman, Z., Mar 1 2019, In : IEEE Journal of Photovoltaics. 9, 2, p. 431-436 6 p., 8625581.

Research output: Contribution to journalArticle

Carrier lifetime
barrier layers
carrier lifetime
minority carriers
Silicon nitride
2018
4 Citations (Scopus)

Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy

Zhang, C., Vadiee, E., King, R. & Honsberg, C., Feb 28 2018, In : Journal of Materials Research. 33, 4, p. 414-423 10 p.

Research output: Contribution to journalArticle

Gallium phosphide
gallium phosphides
Molecular beam epitaxy
Solar cells
molecular beam epitaxy

Developing high performance GaP/Si heterojunction solar cells

Zhang, C., Vadiee, E., Dahal, S., King, R. & Honsberg, C., Nov 1 2018, In : Journal of Visualized Experiments. 2018, 141, e58292.

Research output: Contribution to journalArticle

Heterojunctions
Solar cells
Carrier lifetime
Equipment and Supplies
Crystals
1 Citation (Scopus)

InGaN solar cells with regrown GaN homojunction tunnel contacts

Vadiee, E., Clinton, E. A., McFavilen, H., Weidenbach, A. S., Engel, Z., Matthews, C., Zhang, C., Arena, C., King, R., Honsberg, C. & Doolittle, W. A., Aug 1 2018, In : Applied Physics Express. 11, 8, 082304.

Research output: Contribution to journalArticle

homojunctions
Tunnel junctions
tunnel junctions
tunnels
Solar cells
1 Citation (Scopus)

Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures

Zhang, C., Boley, A., Faleev, N., Smith, D. & Honsberg, C., Dec 1 2018, In : Journal of Crystal Growth. 503, p. 36-44 9 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Defects
defects
molecular beam epitaxy
Defect density
2 Citations (Scopus)

Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers

Mansoori, A., Addamane, S. J., Renteria, E. J., Shima, D. M., Behzadirad, M., Vadiee, E., Honsberg, C. & Balakrishnan, G., Oct 1 2018, In : Solar Energy Materials and Solar Cells. 185, p. 21-27 7 p.

Research output: Contribution to journalArticle

Growth temperature
Dislocations (crystals)
Solar cells
Photovoltaic cells
Substrates
2 Citations (Scopus)

Study of the Interface in a GaP/Si Heterojunction Solar Cell

Saive, R., Emmer, H., Chen, C. T., Zhang, C., Honsberg, C. & Atwater, H., Aug 10 2018, (Accepted/In press) In : IEEE Journal of Photovoltaics.

Research output: Contribution to journalArticle

Heterojunctions
heterojunctions
Solar cells
X ray photoelectron spectroscopy
solar cells
Silicon
pyramids
Silicon Dioxide
Lithography
lithography

Temperature dependence of GaSb and AlGaSb solar cells

Vadiee, E., Fang, Y., Zhang, C., Fischer, A. M., Williams, J. J., Renteria, E. J., Balakrishnan, G. & Honsberg, C., Jan 1 2018, (Accepted/In press) In : Current Applied Physics.

Research output: Contribution to journalArticle

Solar cells
solar cells
temperature dependence
dark current
Dark currents
2017
6 Citations (Scopus)

AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance

Vadiee, E., Renteria, E., Zhang, C., Williams, J. J., Mansoori, A., Addamane, S., Balakrishnan, G. & Honsberg, C., Oct 7 2017, (Accepted/In press) In : IEEE Journal of Photovoltaics.

Research output: Contribution to journalArticle

Solar cells
solar cells
Substrates
Cells
Lattice mismatch
7 Citations (Scopus)
solar cells
electric potential
radiative recombination
gallium phosphides
indium phosphides
2 Citations (Scopus)

Gallium nitride grown by molecular beam epitaxy at low temperatures

Jeffries, A. M., Ding, L., Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Honsberg, C. & Bertoni, M., Nov 30 2017, In : Thin Solid Films. 642, p. 25-30 6 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
Molecular beam epitaxy
molecular beam epitaxy
Growth temperature
8 Citations (Scopus)

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Zhang, C., Kim, Y., Faleev, N. N. & Honsberg, C., Oct 1 2017, In : Journal of Crystal Growth. 475, p. 83-87 5 p.

Research output: Contribution to journalArticle

Silicon
Epitaxial growth
Solar cells
life (durability)
Crystals
4 Citations (Scopus)

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., Ponce, F., Arena, C., Honsberg, C. & Goodnick, S., Nov 1 2017, In : IEEE Journal of Photovoltaics. 7, 6, p. 1646-1652 7 p., 8068948.

Research output: Contribution to journalArticle

High temperature applications
refractories
Refractory materials
Solar cells
solar cells
4 Citations (Scopus)

Stranski-Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Kim, Y., Cho, I. W., Ryu, M. Y., Kim, J. O., Lee, S. J., Ban, K. Y. & Honsberg, C., Aug 14 2017, In : Applied Physics Letters. 111, 7, 073103.

Research output: Contribution to journalArticle

absorbers
solar cells
quantum dots
photoluminescence
radiative recombination
2016
2 Citations (Scopus)

Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Maros, A., Faleev, N. N., Bertoni, M., Honsberg, C. & King, R., Nov 14 2016, In : Journal of Applied Physics. 120, 18, 183104.

Research output: Contribution to journalArticle

photoluminescence
structural analysis
temperature
molecular beam epitaxy
excitons
6 Citations (Scopus)

Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures

Maros, A., Faleev, N., King, R., Honsberg, C., Convey, D., Xie, H. & Ponce, F., Mar 1 2016, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 34, 2, 02L113.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Heterojunctions
Strain relaxation
X rays
Epitaxial films

Detection of the third transition of InAs/GaAsSb quantum dots

Kim, Y., Ban, K. Y., Dahal, S. N., McFelea, H. & Honsberg, C., 2016, In : Journal of Ceramic Processing Research. 17, 4, p. 369-372 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Doping (additives)
indium arsenide
Band structure
Ground state
2 Citations (Scopus)

Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Kim, Y., Ban, K. Y., Zhang, C., Kim, J. O., Lee, S. J. & Honsberg, C., Mar 7 2016, In : Applied Physics Letters. 108, 10, 103104.

Research output: Contribution to journalArticle

solar cells
quantum dots
photocurrents
augmentation
wavelengths
8 Citations (Scopus)
Heterojunctions
solar cells
Semiconductor quantum wells
Photoluminescence
quantum wells
1 Citation (Scopus)

Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Kim, Y., Faleev, N. N., Ban, K. Y., Kim, J. O., Lee, S. J. & Honsberg, C., Jul 7 2016, In : Journal of Physics D: Applied Physics. 49, 30, 305102.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
Crystals

Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels

Ban, K. Y., Kim, Y., Kuciauskas, D., Bremner, S. P. & Honsberg, C., Nov 10 2016, In : Semiconductor Science and Technology. 31, 12, 125010.

Research output: Contribution to journalArticle

Silicon
Semiconductor quantum dots
quantum dots
Doping (additives)
Electrons

Investigation of localized electric field in the type-II InAs/GaAsSb/GaAs structure

Lee, S. H., Kim, J. S., Yoon, S., Kim, Y., Lee, S. J. & Honsberg, C., Nov 1 2016, In : Acta Physica Polonica A. 130, 5, p. 1213-1216 4 p.

Research output: Contribution to journalArticle

oscillations
electric fields
qualitative analysis
excitation
molecular beam epitaxy
10 Citations (Scopus)

Silicon Minority-carrier Lifetime Degradation during Molecular Beam Heteroepitaxial III-V Material Growth

Ding, L., Zhang, C., Nærland, T. U., Faleev, N., Honsberg, C. & Bertoni, M., Aug 1 2016, In : Energy Procedia. 92, p. 617-623 7 p.

Research output: Contribution to journalArticle

Molecular beams
Carrier lifetime
Impurities
Molecular beam epitaxy
Degradation
8 Citations (Scopus)

Solar research not finished

Kurtz, S., Atwater, H., Rockett, A., Buonassisi, T., Honsberg, C. & Benner, J., Feb 26 2016, In : Nature Photonics. 10, 3, p. 141-142 2 p.

Research output: Contribution to journalArticle

2015
15 Citations (Scopus)

Advances in 2D/3D printing of functional nanomaterials and their applications

Choi, J. Y., Das, S., Theodore, N. D., Kim, I., Honsberg, C., Choi, H. W. & Alford, T., 2015, In : ECS Journal of Solid State Science and Technology. 4, 4, p. P3001-P3009

Research output: Contribution to journalArticle

Nanostructured materials
Printing
Functional materials
Ointments
Ink
3 Citations (Scopus)

Defect creation in InGaAs/GaAs multiple quantum wells-I. Structural properties

Karow, M. M., Faleev, N. N., Smith, D. & Honsberg, C., Jul 28 2015, In : Journal of Crystal Growth. 425, p. 43-48 6 p.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Structural properties
quantum wells
Defects
defects
4 Citations (Scopus)

Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties

Karow, M. M., Faleev, N. N., Maros, A. & Honsberg, C., Jul 28 2015, In : Journal of Crystal Growth. 425, p. 49-53 5 p.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Optical properties
quantum wells
optical properties
Defects
6 Citations (Scopus)

Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

Kim, Y., Ban, K. Y., Boley, A., Smith, D. & Honsberg, C., Oct 26 2015, In : Applied Physics Letters. 107, 17, 173109.

Research output: Contribution to journalArticle

spacers
quantum dots
optical properties
thermal stability
luminescence
13 Citations (Scopus)

Fabrication of periodic silicon nanopillars in a two-dimensional hexagonal array with enhanced control on structural dimension and period

Choi, J. Y., Alford, T. & Honsberg, C., Mar 17 2015, In : Langmuir. 31, 13, p. 4018-4023 6 p.

Research output: Contribution to journalArticle

Nanospheres
Silicon
Silicon Dioxide
Metals
Silica

High growth speed of gallium nitride using ENABLE-MBE

Williams, J. J., Fischer, A. M., Williamson, T. L., Gangam, S., Faleev, N. N., Hoffbauer, M. A. & Honsberg, C., Jul 28 2015, In : Journal of Crystal Growth. 425, p. 129-132 4 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
Molecular beam epitaxy
Nitrogen plasma
Cathodoluminescence
7 Citations (Scopus)

III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices

Fabien, C. A. M., Maros, A., Honsberg, C. & Doolittle, W. A., Dec 29 2015, (Accepted/In press) In : IEEE Journal of Photovoltaics.

Research output: Contribution to journalArticle

Gallium nitride
Indium
gallium nitrides
Nitrides
nitrides
3 Citations (Scopus)

Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots

Kim, Y., Ban, K. Y., Kuciauskas, D., Dippo, P. C. & Honsberg, C., Mar 1 2015, In : Semiconductor Science and Technology. 30, 3, 035006.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Photoluminescence
quantum dots
Doping (additives)
photoluminescence
2 Citations (Scopus)

Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs<inf>1-x</inf>Sb<inf>x</inf>/GaAs composite substrates

Tang, D., Kim, Y., Faleev, N., Honsberg, C. & Smith, D., Aug 16 2015, In : Journal of Applied Physics. 118, 9, 094303.

Research output: Contribution to journalArticle

quantum dots
composite materials
carrier lifetime
electron microscopy
thermal stability
9 Citations (Scopus)

Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

Kim, Y., Ban, K. Y., Zhang, C. & Honsberg, C., Oct 12 2015, In : Applied Physics Letters. 107, 15, 153103.

Research output: Contribution to journalArticle

solar cells
quantum dots
quantum efficiency
wavelengths
short circuit currents
10 Citations (Scopus)

Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells

Kim, Y., Ban, K. Y. & Honsberg, C., Jun 1 2015, In : Applied Physics Letters. 106, 22, 222104.

Research output: Contribution to journalArticle

solar cells
quantum dots
quantum efficiency
photocurrents
open circuit voltage
2014
3 Citations (Scopus)

Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots

Kim, Y., Ban, K. Y., Kuciauskas, D., Dippo, P. C. & Honsberg, C., 2014, In : Journal of Crystal Growth. 406, p. 68-71 4 p.

Research output: Contribution to journalArticle

Silicon
Semiconductor quantum dots
Optical properties
quantum dots
Doping (additives)
4 Citations (Scopus)

Growth of high crystal quality InN by ENABLE-MBE

Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Wei, Y., Faleev, N. N. & Honsberg, C., 2014, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 3-4, p. 577-580 4 p.

Research output: Contribution to journalArticle

sapphire
nitrides
crystals
indium
solar cells
2 Citations (Scopus)

Limiting efficiencies of multijunction solar cells with multiple exciton generation

Lee, J. & Honsberg, C., 2014, In : IEEE Journal of Photovoltaics. 4, 3, p. 874-880 7 p., 6762878.

Research output: Contribution to journalArticle

Excitons
solar cells
excitons
Quantum yield
Solar cells
Solar cells
solar cells
composite materials
Composite materials
Substrates
21 Citations (Scopus)

Solvent-controlled spin-coating method for large-scale area deposition of two-dimensional silica nanosphere assembled layers

Choi, J. Y., Alford, T. & Honsberg, C., May 27 2014, In : Langmuir. 30, 20, p. 5732-5738 7 p.

Research output: Contribution to journalArticle

Nanospheres
Spin coating
Silicon Dioxide
Dimethylformamide
coating
2013
23 Citations (Scopus)

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

Bremner, S. P., Ban, K. Y., Faleev, N. N., Honsberg, C. & Smith, D., Sep 14 2013, In : Journal of Applied Physics. 114, 10, 103511.

Research output: Contribution to journalArticle

stress relaxation
quantum dots
barrier layers
molecular beam epitaxy
wafers

Inducing a junction in n-type InxGa(1-x)N

Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Fischer, A. M., Goodnick, S., Faleev, N. N., Ghosh, K. & Honsberg, C., 2013, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31, 3, 03C127.

Research output: Contribution to journalArticle

Gallium
Indium
Piezoelectricity
Binary alloys
Film growth
6 Citations (Scopus)

Quantitative analysis of the quantum dot superlattice by high-resolution x-ray diffraction

Faleev, N. N., Honsberg, C. & Punegov, V. I., Apr 28 2013, In : Journal of Applied Physics. 113, 16, 163506.

Research output: Contribution to journalArticle

quantitative analysis
x ray diffraction
quantum dots
high resolution
aluminum gallium arsenides
13 Citations (Scopus)

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy

Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Magonov, S., Smith, D. & Honsberg, C., 2013, In : Journal of Crystal Growth. 365, p. 35-43 9 p.

Research output: Contribution to journalArticle

Epitaxial layers
Epitaxial growth
Molecular beam epitaxy
Atomic force microscopy
molecular beam epitaxy
17 Citations (Scopus)

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography

Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Kazimirov, A. Y. & Honsberg, C., 2013, In : Journal of Crystal Growth. 365, p. 44-53 10 p.

Research output: Contribution to journalArticle

Epitaxial layers
Molecular beam epitaxy
crystal defects
Topography
Crystal defects
2012
32 Citations (Scopus)

Lateral spectrum splitting concentrator photovoltaics: Direct measurement of component and submodule efficiency

Wang, X., Waite, N., Murcia, P., Emery, K., Steiner, M., Kiamilev, F., Goossen, K., Honsberg, C. & Barnett, A., Mar 2012, In : Progress in Photovoltaics: Research and Applications. 20, 2, p. 149-165 17 p.

Research output: Contribution to journalArticle

concentrators
assemblies
renewable energy
energy conversion efficiency
test stands
17 Citations (Scopus)

Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence

Ban, K. Y., Kuciauskas, D., Bremner, S. P. & Honsberg, C., May 15 2012, In : Journal of Applied Physics. 111, 10, 104302.

Research output: Contribution to journalArticle

alignment
quantum dots
photoluminescence
carrier lifetime
blue shift
4 Citations (Scopus)

Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire

Jampana, B. R., Weiland, C. R., Opila, R. L., Ferguson, I. T. & Honsberg, C., Sep 1 2012, In : Thin Solid Films. 520, 22, p. 6807-6812 6 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Sapphire
Light absorption
sapphire
optical absorption
2011
14 Citations (Scopus)

Controllability of the subband occupation of InAs quantum dots on a delta-doped GaAsSb barrier

Ban, K. Y., Hong, W. K., Bremner, S. P., Dahal, S. N., McFelea, H. & Honsberg, C., Jan 1 2011, In : Journal of Applied Physics. 109, 1, 014312.

Research output: Contribution to journalArticle

controllability
occupation
quantum dots
electrons
photoluminescence