Brian Skromme

Assistant Dean for Academic & Student Affairs and Professor

  • 2178 Citations
  • 29 h-Index
1900 …2022
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Research Output 1900 2016

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1989

Multiple chamber molecular beam epitaxy growth system: Growth of GaAs/ZnSe heterostructures

Tamargo, M. C., De Miguel, J. L., Turco, F. S., Skromme, B., Meynadier, M. H., Nahory, R. E., Hwang, D. M. & Farrell, H. H., Mar 15 1989, In : Proceedings of SPIE - The International Society for Optical Engineering. 1037, p. 73-77 5 p.

Research output: Contribution to journalArticle

Epitaxy
Heterostructures
Gallium Arsenide
Molecular beam epitaxy
Heterojunctions
38 Citations (Scopus)

Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy

Skromme, B., Shibli, S. M., De Miguel, J. L. & Tamargo, M. C., 1989, In : Journal of Applied Physics. 65, 10, p. 3999-4005 7 p.

Research output: Contribution to journalArticle

molecular beam epitaxy
photoluminescence
excitons
electrical measurement
stoichiometry
6 Citations (Scopus)

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

Lee, B., Arai, K., Skromme, B., Bose, S. S., Roth, T. J., Aguilar, J. A., Lepkowski, T. R., Tien, N. C. & Stillman, G. E., 1989, In : Journal of Applied Physics. 66, 8, p. 3772-3786 15 p.

Research output: Contribution to journalArticle

gallium
partial pressure
vapor phases
impurities
silicon
1988
12 Citations (Scopus)

Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

Skromme, B., Bhat, R. & Koza, M. A., 1988, In : Solid State Communications. 66, 5, p. 543-547 5 p.

Research output: Contribution to journalArticle

Superlattices
aluminum gallium arsenides
superlattices
Luminescence
Photoluminescence
8 Citations (Scopus)

GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

Lo, Y. H., Deri, R. J., Harbison, J., Skromme, B., Seto, M., Hwang, D. M. & Lee, T. P., 1988, In : Applied Physics Letters. 53, 14, p. 1242-1244 3 p.

Research output: Contribution to journalArticle

molecular beam epitaxy
waveguides
propagation
crystal defects
integrated circuits
1 Citation (Scopus)

Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition

Skromme, B., Bhat, R. & Koza, M. A., 1988, In : Applied Physics Letters. 52, 12, p. 990-992 3 p.

Research output: Contribution to journalArticle

aluminum gallium arsenides
superlattices
excitons
vapor deposition
luminescence
47 Citations (Scopus)

InGaAs/InP superlattice mixing induced by Zn or Si diffusion

Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L. & Skromme, B., 1988, In : Applied Physics Letters. 53, 12, p. 1051-1053 3 p.

Research output: Contribution to journalArticle

anions
sublattices
superlattices
cations
causes
35 Citations (Scopus)

Planar doping with gallium of molecular beam epitaxial ZnSe

De Miguel, J. L., Shibli, S. M., Tamargo, M. C. & Skromme, B., 1988, In : Applied Physics Letters. 53, 21, p. 2065-2067 3 p.

Research output: Contribution to journalArticle

molecular beams
gallium
luminescence
photoluminescence
augmentation
15 Citations (Scopus)

Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

Skromme, B., Tamargo, M. C., De Miguel, J. L. & Nahory, R. E., 1988, In : Applied Physics Letters. 53, 22, p. 2217-2219 3 p.

Research output: Contribution to journalArticle

defects
excitons
molecular beam epitaxy
photoluminescence
1987
1 Citation (Scopus)

DRAMATIC ENHANCEMENT IN THE GAIN OF ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR TRANSISTORS BY SURFACE PASSIVATION.

Nottenburg, R. N., Sandroff, C. J., Skromme, B., Bischoff, J. C. & Bhat, R., Nov 1987, In : IEEE Transactions on Electron Devices. ED-34, 11

Research output: Contribution to journalArticle

Bipolar transistors
bipolar transistors
Passivation
passivity
aluminum gallium arsenides
177 Citations (Scopus)

Effects of passivating ionic films on the photoluminescence properties of GaAs

Skromme, B., Sandroff, C. J., Yablonovitch, E. & Gmitter, T., 1987, In : Applied Physics Letters. 51, 24, p. 2022-2024 3 p.

Research output: Contribution to journalArticle

photoluminescence
notches
passivity
emission spectra
illumination
75 Citations (Scopus)

Growth of high-quality GaAs using trimethylgallium and diethylarsine

Bhat, R., Koza, M. A. & Skromme, B., 1987, In : Applied Physics Letters. 50, 17, p. 1194-1196 3 p.

Research output: Contribution to journalArticle

liquid nitrogen
gallium
photoluminescence
temperature

IVA-4 Dramatic Enhancement In The Gain of AlGaAs/GaAs Heterostructure Bipolar Transistors by Surface Passivation

Nottenburg, R. N., Sandroff, C. J., Skromme, B., Bischoff, J. C. & Bhat, R., 1987, In : IEEE Transactions on Electron Devices. 34, 11, p. 2370 1 p.

Research output: Contribution to journalArticle

Bipolar transistors
Passivation
Heterojunctions
gallium arsenide
1986
7 Citations (Scopus)

New shallow acceptor levels in GaAs

Skromme, B., Bose, S. S. & Stillman, G. E., Nov 1986, In : Journal of Electronic Materials. 15, 6, p. 345-348 4 p.

Research output: Contribution to journalArticle

Vapors
Ionization potential
Electron transitions
Conduction bands
Photoluminescence
1985
73 Citations (Scopus)

Characterization of high-purity Si-doped molecular beam epitaxial GaAs

Skromme, B., Bose, S. S., Lee, B., Low, T. S., Lepkowski, T. R., DeJule, R. Y., Stillman, G. E. & Hwang, J. C. M., 1985, In : Journal of Applied Physics. 58, 12, p. 4685-4702 18 p.

Research output: Contribution to journalArticle

molecular beams
purity
photoluminescence
defects
traps
13 Citations (Scopus)

Neutron transmutation doping of high purity GaAs

Low, T. S., Kim, M. H., Lee, B., Skromme, B., Lepkowski, T. R. & Stillman, G. E., Sep 1985, In : Journal of Electronic Materials. 14, 5, p. 477-511 35 p.

Research output: Contribution to journalArticle

neutron transmutation doping
Ionization
Neutrons
transmutation
purity
1984
35 Citations (Scopus)

Excited-state-donor to acceptor transitions in the photoluminescence spectrum of GaAs and InP

Skromme, B. & Stillman, G. E., 1984, In : Physical Review B. 29, 4, p. 1982-1992 11 p.

Research output: Contribution to journalArticle

Electron transitions
Conduction bands
Excited states
Ground state
Photoluminescence
29 Citations (Scopus)

IDENTIFICATION OF THE RESIDUAL ACCEPTORS IN UNDOPED HIGH PURITY InP.

Skromme, B., Stillman, G. E., Oberstar, J. D. & Chan, S. S., Feb 1 1984, In : Applied Physics Letters. 44, 3, p. 319-321 3 p.

Research output: Contribution to journalArticle

purity
ionization
liquid phases
energy
vapor phases
11 Citations (Scopus)

PHOTOLUMINESCENCE CHARACTERIZATION OF MOLECULAR BEAM EPITAXIAL GaAs GROWN USING CRACKED AsH//3.

Skromme, B., Stillman, G. E., Calawa, A. R. & Metze, G. M., Jan 1 1984, In : Applied Physics Letters. 44, 2, p. 240-242 3 p.

Research output: Contribution to journalArticle

molecular beams
luminescence
photoluminescence
defects
purity
57 Citations (Scopus)

Photoluminescence identification of the C and Be acceptor levels in InP

Skromme, B., Stillman, G. E., Oberstar, J. D. & Chan, S. S., May 1984, In : Journal of Electronic Materials. 13, 3, p. 463-491 29 p.

Research output: Contribution to journalArticle

Ionization potential
Photoluminescence
Vapor phase epitaxy
photoluminescence
ionization
1983
12 Citations (Scopus)

High purity GaAs grown by the hydride vpe process

Abrokwah, J. K., Peck, T. N., Walterson, R. A., Stillman, G. E., Low, T. S. & Skromme, B., Jul 1983, In : Journal of Electronic Materials. 12, 4, p. 681-699 19 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
Hydrides
hydrides
purity
Partial pressure
34 Citations (Scopus)

Impact ionization of excitons and shallow donors in InP

Skromme, B. & Stillman, G. E., 1983, In : Physical Review B. 28, 8, p. 4602-4607 6 p.

Research output: Contribution to journalArticle

Impact ionization
Excitons
excitons
ionization
Rapid quenching
47 Citations (Scopus)

Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

Skromme, B., Low, T. S., Roth, T. J., Stillman, G. E., Kennedy, J. K. & Abrokwah, J. K., Mar 1983, In : Journal of Electronic Materials. 12, 2, p. 433-457 25 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
Hydrides
hydrides
Photoluminescence
purity
1982
33 Citations (Scopus)

An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium

Hess, K. L., Dapkus, P. D., Manasevit, H. M., Low, T. S., Skromme, B. & Stillman, G. E., Nov 1982, In : Journal of Electronic Materials. 11, 6, p. 1115-1137 23 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
Impurities
impurities
metalorganic chemical vapor deposition
evaluation