Brian Skromme

Assistant Dean for Academic & Student Affairs and Professor

  • 2178 Citations
  • 29 h-Index
1900 …2022
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Research Output 1900 2016

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1 Citation (Scopus)

Achieving low sheet resistance from implanted P-type layers in 4H-SiC using high temperature graphite capped annealing

Wang, Y., Losee, P. A., Balachandran, S., Bhat, I. B., Chow, T. P., Wang, Y., Skromme, B., Kim, J. K. & Schubert, E. F., 2007, In : Materials Science Forum. 556-557, p. 567-570 4 p.

Research output: Contribution to journalArticle

Graphite
Sheet resistance
graphite
Annealing
annealing
33 Citations (Scopus)

An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium

Hess, K. L., Dapkus, P. D., Manasevit, H. M., Low, T. S., Skromme, B. & Stillman, G. E., Nov 1982, In : Journal of Electronic Materials. 11, 6, p. 1115-1137 23 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
Impurities
impurities
metalorganic chemical vapor deposition
evaluation
18 Citations (Scopus)

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

Turco-Sandroff, F. S., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Zhang, Y-H. & Skromme, B., 1991, In : Applied Physics Letters. 59, 6, p. 688-690 3 p.

Research output: Contribution to journalArticle

arsenic
molecular beam epitaxy
photoconductivity
electrical measurement
saturation
17 Citations (Scopus)

Atomic layer epitaxy of device quality GaAs

Colas, E., Bhat, R., Skromme, B. & Nihous, G. C., 1989, In : Applied Physics Letters. 55, 26, p. 2769-2771 3 p.

Research output: Contribution to journalArticle

atomic layer epitaxy
purity
reactors
vapor deposition
photoluminescence
77 Citations (Scopus)

Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

Yablonovitch, E., Skromme, B., Bhat, R., Harbison, J. P. & Gmitter, T. J., 1989, In : Applied Physics Letters. 54, 6, p. 555-557 3 p.

Research output: Contribution to journalArticle

sulfides
illumination
injection
electrons
63 Citations (Scopus)

Band edge exciton states in AlN single crystals and epitaxial layers

Chen, L., Skromme, B., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., Sun, W., Yang, J., Khan, M. A., Nakarmi, M. L., Lin, J. Y. & Jiang, H. X., Nov 8 2004, In : Applied Physics Letters. 85, 19, p. 4334-4336 3 p.

Research output: Contribution to journalArticle

excitons
single crystals
oscillator strengths
crystal field theory
reflectance
19 Citations (Scopus)
Electron transitions
Molecular beam epitaxy
Luminescence
molecular beam epitaxy
luminescence
3 Citations (Scopus)

Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator

Hummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y-H., Skromme, B. & Lee, W. I., 1992, In : Applied Physics Letters. 60, 12, p. 1483-1485 3 p.

Research output: Contribution to journalArticle

gas generators
hydrides
metalorganic chemical vapor deposition
aluminum gallium arsenides
excitons
12 Citations (Scopus)

Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Skromme, B., Mikhov, M. K., Chen, L., Samson, G., Wang, R., Li, C. & Bhat, I., 2004, In : Materials Science Forum. 457-460, I, p. 581-584 4 p.

Research output: Contribution to journalArticle

Electrostatic force
Stacking faults
crystal defects
Raman scattering
Photoluminescence
73 Citations (Scopus)

Characterization of high-purity Si-doped molecular beam epitaxial GaAs

Skromme, B., Bose, S. S., Lee, B., Low, T. S., Lepkowski, T. R., DeJule, R. Y., Stillman, G. E. & Hwang, J. C. M., 1985, In : Journal of Applied Physics. 58, 12, p. 4685-4702 18 p.

Research output: Contribution to journalArticle

molecular beams
purity
photoluminescence
defects
traps

Characterization of ion implanted GaN

Skromme, B., Martinez, G. L., Krasnobaev, L. & Poker, D. B., 2001, In : Materials Research Society Symposium - Proceedings. 639, p. G11.39.1-G11.39.6

Research output: Contribution to journalArticle

Excitons
Vacancies
Photoluminescence
Ions
implantation
3 Citations (Scopus)

Cobic inclusions in 4H-SiC studied with ballistic electron-emission microscopy

Ding, Y., Park, K. B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B., Meidia, H. & Mahajan, S., Jul 2004, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 22, 4, p. 1351-1355 5 p.

Research output: Contribution to journalArticle

Electron emission
Ballistics
ballistics
electron emission
Microscopic examination
10 Citations (Scopus)

Correlated structural and optical characterization of ammonothermally grown bulk GaN

Bai, J., Dudley, M., Raghothamachar, B., Gouma, P., Skromme, B., Chen, L., Hartlieb, P. J., Michaels, E. & Kolis, J. W., Apr 26 2004, In : Applied Physics Letters. 84, 17, p. 3289-3291 3 p.

Research output: Contribution to journalArticle

photoluminescence
crystal defects
transmission electron microscopy
crystals
topography
45 Citations (Scopus)

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

Wang, Y., Ali, G. N., Mikhov, M. K., Vaidyanathan, V., Skromme, B., Raghothamachar, B. & Dudley, M., Jan 1 2005, In : Journal of Applied Physics. 97, 1, 013540.

Research output: Contribution to journalArticle

Schottky diodes
electrical properties
electron beams
defects
electrical faults
22 Citations (Scopus)

Deep-center photoluminescence in nitrogen-doped ZnSe

Hauksson, I. S., Wang, S. Y., Simpson, J., Prior, K. A., Cavenett, B. C., Liu, W. & Skromme, B., 1995, In : Physical Review B. 52, 24, p. 17184-17190 7 p.

Research output: Contribution to journalArticle

Epilayers
Excitons
Photoluminescence
Nitrogen
Activation energy
36 Citations (Scopus)

Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes

Mahajan, A. & Skromme, B., Jun 2005, In : Solid-State Electronics. 49, 6, p. 945-955 11 p.

Research output: Contribution to journalArticle

Schottky diodes
high voltages
Diodes
optimization
Electric potential
Spreadsheets
Semiconductor devices
Teaching
Students
Feedback
1 Citation (Scopus)

DRAMATIC ENHANCEMENT IN THE GAIN OF ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR TRANSISTORS BY SURFACE PASSIVATION.

Nottenburg, R. N., Sandroff, C. J., Skromme, B., Bischoff, J. C. & Bhat, R., Nov 1987, In : IEEE Transactions on Electron Devices. ED-34, 11

Research output: Contribution to journalArticle

Bipolar transistors
bipolar transistors
Passivation
passivity
aluminum gallium arsenides
17 Citations (Scopus)

Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC

Park, K. B., Ding, Y., Pelz, J. P., Mikhov, M. K., Wang, Y. & Skromme, B., 2005, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 222109.

Research output: Contribution to journalArticle

electric contacts
capacitance
quantum wells
inclusions
electric potential
15 Citations (Scopus)

Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition

Skromme, B., Liu, W., Jensen, K. F. & Giapis, K. P., Apr 2 1994, In : Journal of Crystal Growth. 138, 1-4, p. 338-345 8 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Luminescence
Photoluminescence
luminescence
177 Citations (Scopus)

Effects of passivating ionic films on the photoluminescence properties of GaAs

Skromme, B., Sandroff, C. J., Yablonovitch, E. & Gmitter, T., 1987, In : Applied Physics Letters. 51, 24, p. 2022-2024 3 p.

Research output: Contribution to journalArticle

photoluminescence
notches
passivity
emission spectra
illumination
48 Citations (Scopus)

Effects of thermal strain on the optical properties of heteroepitaxial ZnTe

Zhang, Y-H., Skromme, B. & Turco-Sandroff, F. S., 1992, In : Physical Review B. 46, 7, p. 3872-3885 14 p.

Research output: Contribution to journalArticle

Optical properties
excitons
Excitons
optical properties
photoluminescence
89 Citations (Scopus)

Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Skromme, B., Luckowski, E., Moore, K., Bhatnagar, M., Weitzel, C. E., Gehoski, T. & Ganser, D., Mar 2000, In : Journal of Electronic Materials. 29, 3, p. 376-383 8 p.

Research output: Contribution to journalArticle

nonuniformity
Electric potential
Induced currents
electric potential
wafers
11 Citations (Scopus)

Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Shibli, S. M., Tamargo, M. C., De Miguel, J. L., Skromme, B., Nahory, R. E. & Farrell, H. H., 1989, In : Journal of Applied Physics. 66, 9, p. 4295-4300 6 p.

Research output: Contribution to journalArticle

gallium
molecular beam epitaxy
impurities
scattering
35 Citations (Scopus)

Excited-state-donor to acceptor transitions in the photoluminescence spectrum of GaAs and InP

Skromme, B. & Stillman, G. E., 1984, In : Physical Review B. 29, 4, p. 1982-1992 11 p.

Research output: Contribution to journalArticle

Electron transitions
Conduction bands
Excited states
Ground state
Photoluminescence
12 Citations (Scopus)

Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

Skromme, B., Bhat, R. & Koza, M. A., 1988, In : Solid State Communications. 66, 5, p. 543-547 5 p.

Research output: Contribution to journalArticle

Superlattices
aluminum gallium arsenides
superlattices
Luminescence
Photoluminescence
8 Citations (Scopus)

GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

Lo, Y. H., Deri, R. J., Harbison, J., Skromme, B., Seto, M., Hwang, D. M. & Lee, T. P., 1988, In : Applied Physics Letters. 53, 14, p. 1242-1244 3 p.

Research output: Contribution to journalArticle

molecular beam epitaxy
waveguides
propagation
crystal defects
integrated circuits
54 Citations (Scopus)

Growth and characterization of pseudomorphic single crystal zinc blende Mn

Skromme, B., Zhang, Y-H., Smith, D. & Sivananthan, S., 1995, In : Applied Physics Letters. 67, p. 2690 1 p.

Research output: Contribution to journalArticle

zinc
single crystals
halites
high energy electrons
molecular beam epitaxy
75 Citations (Scopus)

Growth of high-quality GaAs using trimethylgallium and diethylarsine

Bhat, R., Koza, M. A. & Skromme, B., 1987, In : Applied Physics Letters. 50, 17, p. 1194-1196 3 p.

Research output: Contribution to journalArticle

liquid nitrogen
gallium
photoluminescence
temperature
11 Citations (Scopus)

Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

Kim, M. H., Bose, S. S., Skromme, B., Lee, B. & Stillman, G. E., Sep 1991, In : Journal of Electronic Materials. 20, 9, p. 671-679 9 p.

Research output: Contribution to journalArticle

Hall effect
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
purity
Impurities
10 Citations (Scopus)

Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: Characterization by electron microscopy and optical methods

Tsen, S. C. Y., Smith, D., Hutchins, J. W., Skromme, B., Chen, Y. P. & Sivananthan, S., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 58-63 6 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Excitons
Electron microscopy
electron microscopy
Photoluminescence
1 Citation (Scopus)

Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition

Skromme, B., Bhat, R. & Koza, M. A., 1988, In : Applied Physics Letters. 52, 12, p. 990-992 3 p.

Research output: Contribution to journalArticle

aluminum gallium arsenides
superlattices
excitons
vapor deposition
luminescence
12 Citations (Scopus)

High purity GaAs grown by the hydride vpe process

Abrokwah, J. K., Peck, T. N., Walterson, R. A., Stillman, G. E., Low, T. S. & Skromme, B., Jul 1983, In : Journal of Electronic Materials. 12, 4, p. 681-699 19 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
Hydrides
hydrides
purity
Partial pressure
10 Citations (Scopus)

Identification of donors in GaAs by resonantly excited high-field magnetospectroscopy

Skromme, B., Bhat, R., Cox, H. M. & Colas, E., May 1989, In : IEEE Journal of Quantum Electronics. 25, 5 pt 1, p. 1035-1045 11 p.

Research output: Contribution to journalArticle

Excitons
excitons
excitation
Dye lasers
Excitation energy
29 Citations (Scopus)

IDENTIFICATION OF THE RESIDUAL ACCEPTORS IN UNDOPED HIGH PURITY InP.

Skromme, B., Stillman, G. E., Oberstar, J. D. & Chan, S. S., Feb 1 1984, In : Applied Physics Letters. 44, 3, p. 319-321 3 p.

Research output: Contribution to journalArticle

purity
ionization
liquid phases
energy
vapor phases
34 Citations (Scopus)

Impact ionization of excitons and shallow donors in InP

Skromme, B. & Stillman, G. E., 1983, In : Physical Review B. 28, 8, p. 4602-4607 6 p.

Research output: Contribution to journalArticle

Impact ionization
Excitons
excitons
ionization
Rapid quenching
47 Citations (Scopus)

InGaAs/InP superlattice mixing induced by Zn or Si diffusion

Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L. & Skromme, B., 1988, In : Applied Physics Letters. 53, 12, p. 1051-1053 3 p.

Research output: Contribution to journalArticle

anions
sublattices
superlattices
cations
causes
15 Citations (Scopus)

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Bai, J., Huang, X., Dudley, M., Wagner, B., Davis, R. F., Wu, L., Sutter, E., Zhu, Y. & Skromme, B., Sep 15 2005, In : Journal of Applied Physics. 98, 6, 063510.

Research output: Contribution to journalArticle

crystal defects
risers
rods
intersections
buffers

Ion beam mixing in ZnSe/CdZnSe strained layer structures

Morton, R., Deng, F., Lau, S. S., Xin, S., Furdyna, J. K., Hutchins, J. W., Skromme, B. & Mayer, J. W., Sep 1996, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 118, 1-4, p. 704-708 5 p.

Research output: Contribution to journalArticle

Ion beams
ion beams
Temperature
temperature
Ions

IVA-4 Dramatic Enhancement In The Gain of AlGaAs/GaAs Heterostructure Bipolar Transistors by Surface Passivation

Nottenburg, R. N., Sandroff, C. J., Skromme, B., Bischoff, J. C. & Bhat, R., 1987, In : IEEE Transactions on Electron Devices. 34, 11, p. 2370 1 p.

Research output: Contribution to journalArticle

Bipolar transistors
Passivation
Heterojunctions
gallium arsenide
65 Citations (Scopus)

Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

Skromme, B., Jayapalan, J., Vaudo, R. P. & Phanse, V. M., Apr 19 1999, In : Applied Physics Letters. 74, 16, p. 2358-2360 3 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
hydrides
excitons
luminescence
data structures
9 Citations (Scopus)

Luminescence as a diagnostic of wide-gap II-VI compound semiconductor materials

Skromme, B., 1995, In : Annual Review of Materials Science. 25, 1, p. 601-646 46 p.

Research output: Contribution to journalArticle

Plasma diagnostics
Luminescence
Metallorganic chemical vapor deposition
Impurities
Semiconductor materials
13 Citations (Scopus)

MnS/ZnSe on GaAs grown by molecular beam epitaxy

Sivananthan, S., Wang, L., Sporken, R., Chen, J., Skromme, B. & Smith, D., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 94-98 5 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
X ray photoelectron spectroscopy
photoelectron spectroscopy
Photoluminescence

Multiple chamber molecular beam epitaxy growth system: Growth of GaAs/ZnSe heterostructures

Tamargo, M. C., De Miguel, J. L., Turco, F. S., Skromme, B., Meynadier, M. H., Nahory, R. E., Hwang, D. M. & Farrell, H. H., Mar 15 1989, In : Proceedings of SPIE - The International Society for Optical Engineering. 1037, p. 73-77 5 p.

Research output: Contribution to journalArticle

Epitaxy
Heterostructures
Gallium Arsenide
Molecular beam epitaxy
Heterojunctions
13 Citations (Scopus)

Neutron transmutation doping of high purity GaAs

Low, T. S., Kim, M. H., Lee, B., Skromme, B., Lepkowski, T. R. & Stillman, G. E., Sep 1985, In : Journal of Electronic Materials. 14, 5, p. 477-511 35 p.

Research output: Contribution to journalArticle

neutron transmutation doping
Ionization
Neutrons
transmutation
purity
7 Citations (Scopus)

New shallow acceptor levels in GaAs

Skromme, B., Bose, S. S. & Stillman, G. E., Nov 1986, In : Journal of Electronic Materials. 15, 6, p. 345-348 4 p.

Research output: Contribution to journalArticle

Vapors
Ionization potential
Electron transitions
Conduction bands
Photoluminescence

Optical activation behavior of ion implanted acceptor species in GaN

Skromme, B. & Martinez, G. L., 2000, In : MRS Internet Journal of Nitride Semiconductor Research. 5, SUPPL. 1

Research output: Contribution to journalArticle

Chemical activation
Ions
Hydrides
Excitons
Ion implantation
35 Citations (Scopus)

Optical and magneto-optical characterization of heteroepitaxial gallium nitride

Skromme, B., Dec 18 1997, In : Materials Science and Engineering B. 50, 1-3, p. 117-125 9 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
Excitons
excitons
Binding energy
24 Citations (Scopus)

Optical characterization of bulk GaN grown by a Na-Ga melt technique

Skromme, B., Palle, K., Poweleit, C. D., Yamane, H., Aoki, M. & DiSalvo, F. J., Dec 16 2002, In : Journal of Crystal Growth. 246, 3-4, p. 299-306 8 p.

Research output: Contribution to journalArticle

Platelets
platelets
Photoluminescence
Full width at half maximum
photoluminescence
3 Citations (Scopus)

Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

Hutchins, J. W., Parameshwaran, B., Skromme, B., Smith, D. & Sivananthan, S., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 50-53 4 p.

Research output: Contribution to journalArticle

quaternary alloys
Heterojunctions
quantum wells
Quantum confinement
Molecular beam epitaxy