AINE: Computational Nanoscience, Center for (CCN)

Research Output 1993 2019

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Chapter
2017

Comparative analysis of mobility and dopant number fluctuation models for the threshold voltage fluctuation estimation in 45 nm channel length MOSFET device

Ashraf, N., Vasileska, D., Wirth, G. & Srinivasan, P., Jan 1 2017, Nanoelectronic Device Applications Handbook. CRC Press, p. 15-26 12 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Threshold voltage
Telegraph
Transistors
Doping (additives)
Surface potential

Interplay of self-heating and short-range coulomb interactions due to traps in a 10 nm channel length nanowire transistor

Hossain, A., Vasileska, D., Raleva, K. & Goodnick, S., Jan 1 2017, Nanoelectronic Device Applications Handbook. CRC Press, p. 711-716 6 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Telegraph
Coulomb interactions
Nanowires
Transistors
Heating

Modeling self-heating effects in nanoscale devices

Raleva, K., Shaik, A. R., Qazi, S. S., Daugherty, R., Laturia, A., Kaczer, B., Bury, E. & Vasileska, D., Jan 1 2017, Nanophononics: Thermal Generation, Transport, and Conversion at the Nanoscale. Pan Stanford Publishing Pte. Ltd., p. 1-30 30 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

integrated circuits
Heating
foundries
heating
Integrated circuits

Monte carlo device simulations

Raleva, K., Shaik, A. R., Hathwar, R., Laturia, A., Qazi, S. S., Daugherty, R., Vasileska, D. & Goodnick, S., Jan 1 2017, Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods. CRC Press, Vol. 2. p. 773-806 34 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Silicon
MOS devices
industries
semiconductor devices
Electronics industry
2015

Atomistic simulations on reliability

Vasileska, D. & Ashraf, N., Jan 1 2015, Circuit Design for Reliability. Springer New York, p. 47-67 21 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Threshold voltage
Telegraph
Drain current
Doping (additives)
Digital integrated circuits
2012

Realizing terawatt-scale solar electricity: Nanotechnology-enabled physical mechanisms and material properties

Honsberg, C. & Goodnick, S., 2012, IEEE Nanotechnology Magazine. 2 ed. Vol. 6. p. 6-14 9 p. 6198867

Research output: Chapter in Book/Report/Conference proceedingChapter

Nanotechnology
Materials properties
Electricity
Geographical distribution
Global warming