AINE: Computational Nanoscience, Center for (CCN)

Fingerprint Dive into the research topics where AINE: Computational Nanoscience, Center for (CCN) is active. These topic labels come from the works of this organization's members. Together they form a unique fingerprint.

Engineering & Materials Science

Solar cells
Silicon
High electron mobility transistors
Simulators
Transistors
MESFET devices
Heating
Doping (additives)
Nanowires
Temperature
Threshold voltage
Cutoff frequency
Electrons
Electric potential
Telegraph
Scattering
Field effect transistors
Power amplifiers
Heterojunctions
Semiconductor quantum wells
Defects
Phonons
MOSFET devices
Nanopores
Degradation
MISFET devices
Hot carriers
Electric breakdown
Impact ionization
Carrier transport
Energy gap
Wave power
Amorphous silicon
Semiconductor materials
Polarization
Cellular automata
Networks (circuits)
Millimeter waves
Electric fields
Analytical models
Hot electrons
Ions
Sensors
Diamonds
Drain current
Substrates
Metals
Diodes
Foundries
Acoustics
Coulomb interactions
Crystalline materials
Solar energy
Poisson equation
Physics
Energy balance
Inversion layers
Gallium phosphide
Kinetics
Nitrides
Tunnel junctions
Electromechanical coupling
Fabrication
Oxides
Open circuit voltage
Aspect ratio
Quantum efficiency
Thermal effects
Band structure
Impurities
Short circuit currents
Electron-phonon interactions
Electronic equipment
Grain boundaries
Integrated circuits
Monte Carlo simulation
Green's function
Hot Temperature
Transconductance
Thermodynamics
Signal processing
Biosensors
Current voltage characteristics
Ohmic contacts
Semiconductor quantum dots
Silicon on insulator technology
Semiconductor devices
Nanostructures
Passivation
Relaxation processes
Volatile organic compounds
Silica
Dispersions
Screening
Thermionic emission
Distribution functions
Frequency response
Proteins
Computer simulation
Radiation

Chemical Compounds

Silicon
Solar cells
High electron mobility transistors
Simulators
Transistors
Doping (additives)
Heating
Scattering
MESFET devices
Cutoff frequency
Defects
MOSFET devices
Nanowires
Temperature
MISFET devices
Semiconductor quantum wells
Polarization
Electrons
Semiconductor materials
Heterojunctions
Threshold voltage
Carrier transport
Impact ionization
Phonons
Diamond
Amorphous silicon
Metals
Poisson equation
Electric potential
Substrates
Energy gap
Degradation
Field effect transistors
Hot electrons
Electric fields
Telegraph
Crystalline materials
Oxides
Nanopores
Kinetics
Analytical models
Electric breakdown
Acoustics
Nitrides
Inversion layers
Networks (circuits)
Solar energy
Open circuit voltage
Coulomb interactions
Energy balance
Integrated circuits
Physics
Passivation
Impurities
Diodes
Thermal effects
Quantum efficiency
Electromechanical coupling
Hot carriers
Band structure
Short circuit currents
Capacitance
Foundries
Grain boundaries
Cellular automata
Aspect ratio
Thermodynamics

Physics & Astronomy

Engineering

field effect transistors
high electron mobility transistors
solar cells
transistors
nanowires
CMOS
SOI (semiconductors)
scattering
heating
traps
MIS (semiconductors)
electrical faults
foundries
ionization
direct current

General

simulation
simulators
insulators
power amplifiers
amplifiers
inversions
defects
metals
cut-off
integrated circuits
electric fields
degradation
millimeter waves
energy
electronics
impurities
cellular automata
thermodynamics

Chemistry and Materials

silicon
surface roughness
diamonds

Physics

threshold voltage
quantum wells
electric potential
temperature
electrons
phonons
solar energy