BioMolecular Integrated Circuits, Center for (CBIC)

Research output

Research output per year 1996 2010 2018 2019

• 36 Article
• 23 Conference contribution
• 1 Conference article

Research output per year

Research output per year

Search results

• 2019

  Assessment of self-heating effects under lateral scaling of GaN HEMTs

  Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Feb 2019, In: IEEE Transactions on Electron Devices. 66, 2, p. 908-916 9 p., 8601308.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Electric Field 77%
  • Acoustic Phonon 75%
  • Optical Phonon 68%
  • Heating 61%
  9 Scopus citations
• 2018

  A Π-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs

  Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Oct 2018, In: IEEE Transactions on Electron Devices. 65, 10, p. 4263-4270 8 p., 8445694.

  Research output: Contribution to journal › Article › peer-review

  • Hot electrons 100%
  • Hot Electron 96%
  • High electron mobility transistors 77%
  • Simulation 42%
  • Distribution Function 41%
  20 Scopus citations

• Development of a numerical model for performance-based design of geosynthetic liner systems

  Kavazanjian, E., Wu, X., Arab, M. & Matasovic, N., Apr 2018, In: Geotextiles and Geomembranes. 46, 2, p. 166-182 17 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • geosynthetics 100%
  • liner 89%
  • Numerical models 66%
  • Geomembranes 61%
  • Strain 56%
  12 Scopus citations

• End-of-Life Heavy Metal Releases from Photovoltaic Panels and Quantum Dot Films: Hazardous Waste Concerns or Not?

  Brown, F. C., Bi, Y., Chopra, S., Hristovski, K., Westerhoff, P. & Theis, T. L., Jul 2 2018, In: ACS Sustainable Chemistry and Engineering. 6, 7, p. 9369-9374 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Hazardous Waste 100%
  • Heavy metals 93%
  • hazardous waste 75%
  • Quantum Dot 64%
  • Heavy Metal 61%
  18 Scopus citations

• Hydrological modeling of climate change impacts in a Tropical River Basin: A case study of the Cauto River, Cuba

  Montecelos-Zamora, Y., Cavazos, T., Kretzschmar, T., Vivoni, E., Corzo, G. & Molina-Navarro, E., Aug 25 2018, In: Water (Switzerland). 10, 9, 1135.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Soil and Water Assessment Tool model 100%
  • Climate Change 76%
  • River basins 74%
  • Cuba 72%
  • Rivers 67%
  14 Scopus citations

• Multimodel assessment of climate change-induced hydrologic impacts for a Mediterranean catchment

  Perra, E., Piras, M., Deidda, R., Paniconi, C., Mascaro, G., Vivoni, E., Cau, P., Marras, P. A., Ludwig, R. & Meyer, S., Jul 30 2018, In: Hydrology and Earth System Sciences. 22, 7, p. 4125-4143 19 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • catchment 100%
  • climate change 77%
  • climate modeling 34%
  • water budget 27%
  • hydrology 25%
  25 Scopus citations

• Multiscale Coupled Electro-Thermal Simulations of Electron Devices

  Merrill, K. & Saraniti, M., Dec 27 2018, THERMINIC 2018 - 24th International Workshop on Thermal Investigations of ICs and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8593320. (THERMINIC 2018 - 24th International Workshop on Thermal Investigations of ICs and Systems, Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Electron-Phonon Scattering 100%
  • Electron devices 81%
  • thermal simulation 72%
  • Thermal Conductivity 49%
  • Heat 39%
  1 Scopus citations

• On the Sensitivity of Hillslope Runoff and Channel Transmission Losses in Arid Piedmont Slopes

  Schreiner-McGraw, A. P. & Vivoni, E., Jul 2018, In: Water Resources Research. 54, 7, p. 4498-4518 21 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • transmission loss 100%
  • piedmont 78%
  • hillslope 75%
  • runoff 49%
  • streamflow 35%
  22 Scopus citations

• Quantifying Water and Energy Fluxes Over Different Urban Land Covers in Phoenix, Arizona

  Templeton, N. P., Vivoni, E., Wang, Z. & Schreiner-McGraw, A. P., Feb 27 2018, In: Journal of Geophysical Research: Atmospheres. 123, 4, p. 2111-2128 18 p.

  Research output: Contribution to journal › Article › peer-review

  • Phoenix (AZ) 100%
  • energy flux 71%
  • water flux 68%
  • water use 61%
  • land cover 52%
  21 Scopus citations
• 2017

  Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations

  Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Dec 26 2017, 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p. (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017; vol. 2017-January).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Phonons 100%
  • High electron mobility transistors 73%
  • Energy balance 66%
  • high electron mobility transistors 65%
  • Acoustic Phonon 55%
  4 Scopus citations

• Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs

  Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Aug 1 2017, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999436

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Hot electrons 100%
  • High electron mobility transistors 77%
  • Power amplifiers 44%
  • Hot carriers 29%
  • Distribution functions 23%
  6 Scopus citations

• Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations

  Soligo, R., Sabatti, F., Chowdhury, S. & Saraniti, M., Nov 2017, In: IEEE Transactions on Electron Devices. 64, 11, p. 4442-4449 8 p., 8061004.

  Research output: Contribution to journal › Article › peer-review

  • Hot electrons 100%
  • Hot Electron 96%
  • Momentum 88%
  • Aerospace engineering 85%
  • Monte Carlo Method 71%
  1 Scopus citations

• Simulation of Phonon Transport in Semiconductors Using a Population-Dependent Many-Body Cellular Monte Carlo Approach

  Sabatti, F. F. M., Goodnick, S. & Saraniti, M., Mar 1 2017, In: Journal of Heat Transfer. 139, 3, 032002.

  Research output: Contribution to journal › Article › peer-review

  • Phonons 100%
  • Phonon 71%
  • Scattering 60%
  • Semiconductor materials 56%
  • Semiconductor 48%
  9 Scopus citations
• 2016

  A fully online accredited undergraduate electrical engineering program

  Phillips, S. & Saraniti, M., Jun 26 2016, 2016 ASEE Annual Conference and Exposition. American Society for Engineering Education, Vol. 2016-June.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Electrical engineering 100%
  • Students 65%
  • Accreditation 26%
  • Curricula 10%
  • Industry 8%
  5 Scopus citations

• Carrier relaxation and impact ionization in core-shell III-V nanowires

  Hathwar, R., Saraniti, M. & Goodnick, S., Nov 21 2016, 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., p. 832-835 4 p. 7751540

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Impact Ionization 100%
  • Impact ionization 88%
  • Nanowires 70%
  • Relaxation 52%
  • Nanowire 49%

• Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

  Hathwar, R., Saraniti, M. & Goodnick, S., Jul 28 2016, In: Journal of Applied Physics. 120, 4, 044307.

  Research output: Contribution to journal › Article › peer-review

  • nanowires 100%
  • simulation 47%
  • Runge-Kutta method 38%
  • Brillouin zones 32%
  • electric fields 27%
  5 Scopus citations
• 2015

  Energy Relaxation and Non-linear Transport in InAs Nanowires

  Hathwar, R., Saraniti, M. & Goodnick, S., Oct 13 2015, In: Journal of Physics: Conference Series. 647, 1, 012029.

  Research output: Contribution to journal › Conference article › peer-review

  Open Access

  • nanowires 100%
  • relaxation time 65%
  • scattering 42%
  • energy 36%
  • electron energy 31%
  3 Scopus citations

• Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis

  Popescu, B., Popescu, D., Saraniti, M. & Lugli, P., Jun 1 2015, In: IEEE Transactions on Electron Devices. 62, 6, p. 1848-1854 7 p., 7102727.

  Research output: Contribution to journal › Article › peer-review

  • Nanowires 100%
  • Monte Carlo Method 85%
  • Nanowire 69%
  • Signal analysis 59%
  • Frequency response 49%
  1 Scopus citations

• The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor

  Soligo, R., Chowdhury, S., Gupta, G., Mishra, U. & Saraniti, M., Jul 1 2015, In: IEEE Electron Device Letters. 36, 7, p. 669-671 3 p., 7112128.

  Research output: Contribution to journal › Article › peer-review

  • Current Gain 100%
  • Hot electrons 83%
  • Hot Electron 80%
  • Cutoff frequency 64%
  • Short Circuit 58%
  2 Scopus citations
• 2014

  Avalanche breakdown in SOI MESFETs

  Lepkowski, W., Wilk, S. J., Parsi, A., Saraniti, M., Ferry, D. & Thornton, T., 2014, In: Solid-State Electronics. 91, p. 78-80 3 p.

  Research output: Contribution to journal › Article › peer-review

  • Avalanche Breakdown 100%
  • MISFET devices 92%
  • MESFET devices 78%
  • Breakdown Voltage 72%
  • MIS (semiconductors) 54%
  7 Scopus citations

• Full band monte carlo simulation of In_0.7Ga_0.3As junctionless nanowire field effect transistors

  Hathwar, R., Saraniti, M. & Goodnick, S., Nov 26 2014, Proceedings of the IEEE Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., p. 645-649 5 p. 6968090. (Proceedings of the IEEE Conference on Nanotechnology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Field-effect Transistor 100%
  • Nanowires 97%
  • Field effect transistors 60%
  • Monte Carlo Simulation 49%
  • nanowires 45%
  3 Scopus citations

• Terahertz devices and device modeling

  Soligo, R., Saraniti, M. & Goodnick, S., 2014, Micro- and Nanotechnology Sensors, Systems, and Applications VI. SPIE, 90830B. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 9083).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Electron Mobility 100%
  • High electron mobility transistors 96%
  • high electron mobility transistors 86%
  • UHF devices 86%
  • Electron 85%

• X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading

  Guerra, D., Saraniti, M., Ferry, D. K. & Goodnick, S., 2014, 2014 IEEE MTT-S International Microwave Symposium, IMS 2014. Institute of Electrical and Electronics Engineers Inc., 6848583. (IEEE MTT-S International Microwave Symposium Digest).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Wave power 100%
  • Power transistors 97%
  • transistors 59%
  • harmonics 52%
  • simulation 28%
  1 Scopus citations
• 2013

  Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs

  Marino, F. A., Tierney, B., Akis, R., Saraniti, M. & Goodnick, S., 2013, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. p. 67-70 4 p. 6721009. (Proceedings of the IEEE Conference on Nanotechnology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Semiconductor quantum wells 100%
  • Field effect transistors 68%
  • Monte Carlo Method 67%
  • Field Effect 63%
  • Scattering 60%

• Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations

  Guerra, D., Saraniti, M., Ferry, D. K. & Goodnick, S., Dec 1 2013, 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013. 6697725. (IEEE MTT-S International Microwave Symposium Digest).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Wave power 100%
  • Power transistors 97%
  • millimeter waves 74%
  • Millimeter waves 74%
  • linearity 72%
  4 Scopus citations
• 2012

  Cellular Monte Carlo study lateral scaling impact of on the DC-RF performance of high-power GaN HEMTs

  Soligo, R., Guerra, D., Ferry, D. K., Goodnick, S. & Saraniti, M., 2012, 2012 15th International Workshop on Computational Electronics, IWCE 2012. 6242863. (2012 15th International Workshop on Computational Electronics, IWCE 2012).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Power HEMT 100%
  • High Power 72%
  • Monte Carlo Study 66%
  • Lateral 66%
  • Scaling 51%
  3 Scopus citations

• Millimeter-wave power amplifier circuit-device simulations through coupled Harmonic Balance-Monte Carlo particle-based device simulator

  Guerra, D., Ferry, D. K., Saraniti, M. & Goodnick, S., 2012, IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium. 6258430. (IEEE MTT-S International Microwave Symposium Digest).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Wave power 100%
  • power amplifiers 88%
  • Field effect transistors 80%
  • millimeter waves 74%
  • Millimeter waves 74%
  3 Scopus citations

• Modeling and simulation of terahertz devices

  Goodnick, S. & Saraniti, M., 2012, In: IEEE Microwave Magazine. 13, 7, p. 36-44 9 p., 6355782.

  Research output: Contribution to journal › Article › peer-review

  • Terahertz spectroscopy 100%
  • Submillimeter waves 82%
  • submillimeter waves 47%
  • Biosensors 33%
  • Optical communication 32%
  3 Scopus citations

• Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications

  Akis, R., Soligo, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., 2012, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 6322205. (Proceedings of the IEEE Conference on Nanotechnology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Impact ionization 100%
  • Cutoff frequency 74%
  • Impact Ionization 56%
  • Transistors 54%
  • Tunnels 53%
  1 Scopus citations
• 2011

  Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs

  Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. & Marino, F. A., Nov 2011, In: IEEE Transactions on Electron Devices. 58, 11, p. 3876-3884 9 p., 6024451.

  Research output: Contribution to journal › Article › peer-review

  • Power HEMT 100%
  • Wave power 79%
  • Passivation 72%
  • Chemical Passivation 60%
  • Permittivity 59%
  12 Scopus citations

• Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

  Guerra, D., Marino, F. ALESSIO., Goodnick, S., Ferry, D. & Saraniti, M., Sep 2011, In: International Journal of High Speed Electronics and Systems. 20, 3, p. 423-430 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Power HEMT 100%
  • Figure of Merit 68%
  • Monte Carlo Method 63%
  • Capacitance 51%
  • Simulators 43%

• Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

  Guerra, D., Ferry, D. K., Goodnick, S., Saraniti, M. & Marino, F. A., Nov 1 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. p. 87-90 4 p. 6035056. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Millimeter Wave 100%
  • Device Simulation 94%
  • Power HEMT 94%
  • Wave power 74%
  • Millimeter waves 55%
  3 Scopus citations

• Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation

  Guerra, D., Marino, F. A., Ferry, D. K., Goodnick, S., Saraniti, M. & Soligo, R., 2011, 2011 International Electron Devices Meeting, IEDM 2011. p. 34.2.1-34.2.4 6131668. (Technical Digest - International Electron Devices Meeting, IEDM).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • power amplifiers 100%
  • High electron mobility transistors 98%
  • Field effect transistors 90%
  • high electron mobility transistors 87%
  • Power amplifiers 83%
  5 Scopus citations

• Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations

  Guerra, D., Marino, F. A., Akis, R., Ferry, D. K., Goodnick, S. & Saraniti, M., 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers. p. 193-196 4 p. 5719347. (2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • High electron mobility transistors 100%
  • Electrons 43%
  • Aspect ratio 40%
  • Simulators 31%
• 2010

  Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs

  Guerra, D., Akis, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., Nov 2010, In: IEEE Electron Device Letters. 31, 11, p. 1217-1219 3 p., 5585697.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Phonon 97%
  • Electronic Band Structure 87%
  • Aspect ratio 80%
  • Dielectric Constant 79%
  44 Scopus citations

• Brownian Dynamics study of the effects of dielectric constant on conductivity of porins

  Smolyanitsky, A., Aboud, S. & Saraniti, M., Dec 2010, In: Journal of Computational and Theoretical Nanoscience. 7, 12, p. 2543-2546 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Brownian Dynamics 100%
  • Dielectric Constant 93%
  • Conductivity 67%
  • Permittivity 62%
  • Proteins 56%
  1 Scopus citations

• Catalytic surfaces of silicon nanopores, a brownian dynamics study

  Ramaprasad, P., Goodnick, S. & Saraniti, M., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 137-140 4 p. 5677998. (2010 14th International Workshop on Computational Electronics, IWCE 2010).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nanopore 100%
  • Brownian Dynamics 91%
  • Nanopores 83%
  • Silicon 79%
  • Surface charge 53%

• Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

  Marino, F. A., Guerra, D., Ferry, D. K., Goodnick, S. & Saraniti, M., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 109-112 4 p. 5678003. (2010 14th International Workshop on Computational Electronics, IWCE 2010).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • InGaAs 100%
  • Field-effect Transistor 90%
  • Quantum Well 87%
  • Semiconductor quantum wells 79%
  • Field effect transistors 54%

• Cellular Monte Carlo study of RF short-channel effects, effective gate length, and aspect ratio in GaN and InGaAs HEMTs

  Guerra, D., Akis, R., Ferry, D. K., Goodnick, S., Saraniti, M. & Marino, F. A., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 105-108 4 p. 5678006. (2010 14th International Workshop on Computational Electronics, IWCE 2010).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • InGaAs 100%
  • Aspect Ratio 64%
  • High electron mobility transistors 59%
  • Monte Carlo Study 56%
  • Electrons 51%
  2 Scopus citations

• Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations

  Guerra, D., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Marino, F. A., Dec 2010, In: IEEE Transactions on Electron Devices. 57, 12, p. 3348-3354 7 p., 5595023.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Monte Carlo Method 91%
  • Electron Gas 67%
  • Simulation 54%
  • Phonon 48%
  18 Scopus citations

• Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

  Marino, F. A., Faralli, N., Palacios, T., Ferry, D. K., Goodnick, S. & Saraniti, M., Jan 2010, In: IEEE Transactions on Electron Devices. 57, 1, p. 353-360 8 p., 5339189.

  Research output: Contribution to journal › Article › peer-review

  • Threading Dislocation 100%
  • High electron mobility transistors 61%
  • Transistors 45%
  • Compound Mobility 40%
  • Edge Dislocation 22%
  99 Scopus citations

• Emerging N-face GaN HEMT technology: A cellular Monte Carlo study

  Marino, F. A., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Guerra, D., Oct 2010, In: IEEE Transactions on Electron Devices. 57, 10, p. 2579-2586 8 p., 5549880.

  Research output: Contribution to journal › Article › peer-review

  • Electron Mobility 100%
  • High electron mobility transistors 96%
  • Length 49%
  • Phonon 47%
  • Electronic Band Structure 42%
  8 Scopus citations

• Field effect modulation of ionic conductance of cylindrical silicon-on-insulator nanopore array

  Joshi, P., Smolyanitsky, A., Petrossian, L., Goryll, M., Saraniti, M. & Thornton, T., 2010, In: Journal of Applied Physics. 107, 5, 054701.

  Research output: Contribution to journal › Article › peer-review

  • insulators 100%
  • modulation 90%
  • silicon 73%
  • electrolytes 56%
  33 Scopus citations

• Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

  Akis, R., Faralli, N., Goodnick, S., Ferry, D. K. & Saraniti, M., Oct 2010, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2502-2505 4 p.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • power gain 42%
  • performance 42%
  • cut-off 26%
  • oscillations 20%
  1 Scopus citations

• Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

  Marino, F. A., Guerra, D., Goodnick, S. & Saraniti, M., Oct 20 2010, 2010 IEEE International Reliability Physics Symposium, IRPS 2010. p. 516-521 6 p. 5488779. (IEEE International Reliability Physics Symposium Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • High electron mobility transistors 100%
  • Edge dislocations 35%

• RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations

  Marino, F. A., Guerra, D., Goodnick, S., Ferry, D. & Saraniti, M., Oct 2010, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2445-2449 5 p.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • direct current 75%
  • simulators 63%
  • characterization 53%
  • simulation 37%
  1 Scopus citations

• Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

  Marino, F. A., Cullen, D. A., Smith, D., McCartney, M. & Saraniti, M., 2010, In: Journal of Applied Physics. 107, 5, 054516.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • holography 94%
  • polarization 51%
  • electrons 40%
  • simulation 37%
  22 Scopus citations
• 2009

  Ballistic transport in InP-based HEMTs

  Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Phatak, K. A. & Saraniti, M., Dec 2009, In: IEEE Transactions on Electron Devices. 56, 12, p. 2935-2944 10 p., 5299052.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Ballistics 95%
  • Monte Carlo Method 91%
  • Electronic Band Structure 87%
  • Semiconductor 65%
  8 Scopus citations

• Figures of merit in high-frequency and high-power GaN HEMTs

  Marino, F. A., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., 2009, In: Journal of Physics: Conference Series. 193, 012040.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • figure of merit 92%
  • cut-off 60%
  • electrical faults 47%
  • Fourier analysis 28%
  21 Scopus citations

• Physical modeling of microwave transistors using a full-band/full-wave simulation approach

  Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K. & Goodnick, S., 2009, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 5091139. (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Gallium Arsenide 100%
  • Simulation Tool 90%
  • Finite-difference Time-domain (FDTD) 89%
  • Physical Modeling 89%
  • Microwave 80%
  2 Scopus citations