Applied Nanoionics, Center for (CANi)

Research output

Research output per year 2000 2009 2010 2011 2012 2014 2015 2016 2017 2018 2019 2023

• 187 Article
• 84 Conference contribution
• 7 Review article
• 6 Conference article
• 17 More
  • 6 Editorial
  • 5 Chapter
  • 5 Comment/debate
  • 1 Letter

Research output per year

Research output per year

Search results

• 2023

  Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications

  Al Mamun, F., Vrudhula, S., Vasileska, D., Barnaby, H. & Sanchez Esqueda, I., Nov 2023, In: Solid-State Electronics. 209, 108783.

  Research output: Contribution to journal › Article › peer-review

  • Charge trapping 100%
  • SOI (semiconductors) 69%
  • Transistors 54%
  • Interface Trap 52%
  • transistors 50%

• Impact of TID on the Analog Conductance and Training Accuracy of CBRAM-Based Neural Accelerator

  Apsangi, P., Chamele, N., Barnaby, H. J., Gonzalez-Velo, Y., Holbert, K. E. & Kozicki, M. N., Dec 1 2023, In: IEEE Transactions on Nuclear Science. 70, 12, p. 2572-2577 6 p.

  Research output: Contribution to journal › Article › peer-review

  • random access memory 100%
  • Particle accelerators 87%
  • education 85%
  • accelerators 70%
  • analogs 69%

• Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures

  Wallace, T., Spear, M., Privat, A., Neuendank, J., Irumva, G., Wilson, D., Esqueda, I. S., Barnaby, H. J., Turowski, M., Mikkola, E., Hughart, D., Marinella, M. J., Brunhaver, J., Gutierrez, A., Von Niederhausern, R., Holloway, S., Beltran, D. & Taggart, J. L., Apr 1 2023, In: IEEE Transactions on Nuclear Science. 70, 4, p. 620-626 7 p.

  Research output: Contribution to journal › Article › peer-review

  • fins 100%
  • Doping (additives) 92%
  • Field effect transistors 89%
  • layouts 87%
  • Drain current 70%
  2 Scopus citations

• Non-Linear Coupling Effects in Fully Depleted SOI Transistors

  Spear, M., Barnaby, H. J., Wallace, T., Solano, J., Forman, O., Wilson, D., Esqueda, I. S., Privat, A., Turowski, M., Vonniederhausern, R. & Marinella, M. J., Apr 1 2023, In: IEEE Transactions on Nuclear Science. 70, 4, p. 434-441 8 p.

  Research output: Contribution to journal › Article › peer-review

  • SOI (semiconductors) 100%
  • Transistors 77%
  • transistors 72%
  • dosage 30%
  • computer aided design 26%
  1 Scopus citations

• The Living with a Star Space Environment Testbed Payload

  Dyer, C. S., Ryden, K. A., Morris, P. A., Hands, A. D. P., McNulty, P. J., Vaille, J. R., Dusseau, L., Cellere, G., Paccagnella, A., Barnaby, H. J., Benedetto, A. R., Velazco, R., Possamai Bastos, R., Brewer, D., Barth, J. L., Label, K. A., Campola, M. J., Zheng, Y. & Xapsos, M. A., Mar 1 2023, In: IEEE Transactions on Nuclear Science. 70, 3, p. 200-215 16 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • aerospace environments 100%
  • payloads 92%
  • Stars 83%
  • Testbeds 78%
  • space weather 55%
• 2022

  An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges

  Livingston, I. P., Esqueda, I. S. & Barnaby, H. J., Jan 2022, In: Solid-State Electronics. 187, 108193.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Surface potential 100%
  • Surface Potential 80%
  • Oxides 63%
  • field effect transistors 57%
  • Potential Equation 55%
  1 Scopus citations

• A Soft-Error Hardened by Design Microprocessor Implemented on Bulk 12-nm FinFET CMOS

  Clark, L. T., Duvnjak, A., Cannon, M., Brunhaver, J., Agarwal, S., Manuel, J. E., Wilson, D., Barnaby, H. & Marinella, M., Jul 1 2022, In: IEEE Transactions on Nuclear Science. 69, 7, p. 1602-1609 8 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • FinFET 100%
  • microprocessors 95%
  • Microprocessor chips 70%
  • CMOS 69%
  • redundancy 48%
  1 Scopus citations

• In-Flight Demonstration of Enhanced-Low-Dose-Rate-Sensitivity (ELDRS) in Bipolar Junction Transistors

  Benedetto, A. R., Barnaby, H. J., Cook, C., Campola, M. J. & Tender, A., 2022, 2022 IEEE Aerospace Conference, AERO 2022. IEEE Computer Society, (IEEE Aerospace Conference Proceedings; vol. 2022-March).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • junction transistors 100%
  • Bipolar transistors 89%
  • bipolar transistors 78%
  • flight 68%
  • aerospace environments 59%

• Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells

  Chamele, N., Balaban, M. B., Patadia, A., Swain, S. S., Gonzalez-Velo, Y., Roldan, M. & Kozicki, M., Aug 2022, In: Advanced Electronic Materials. 8, 8, 2100897.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Electrodeposit 100%
  • Electrodeposition 97%
  • Metallizing 88%
  • Characterization (materials science) 66%
  • Ions 46%

• Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

  Milano, G., Aono, M., Boarino, L., Celano, U., Hasegawa, T., Kozicki, M., Majumdar, S., Menghini, M., Miranda, E., Ricciardi, C., Tappertzhofen, S., Terabe, K. & Valov, I., Aug 11 2022, In: Advanced Materials. 34, 32, 2201248.

  Research output: Contribution to journal › Review article › peer-review

  Open Access

  • Conductance 100%
  • Equipment and Supplies 62%
  • Ambient Reaction Temperature 38%
  • Filament 34%
  • Application 32%
  34 Scopus citations

• Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology

  Al Seragi, E. M., Dash, S., Muthuseenu, K., Cressler, J. D., Barnaby, H. J., Khachatrian, A., Buchner, S. P., McMorrow, D. & Zeinolabedinzadeh, S., Oct 1 2022, In: IEEE Transactions on Nuclear Science. 69, 10, p. 2154-2161 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Germanium 100%
  • Heterojunction bipolar transistors 88%
  • millimeter waves 73%
  • Millimeter waves 73%
  • germanium 66%
  1 Scopus citations

• Radiation-induced Enhancement of Scattering Effects in FD-SOI MOSFETs

  Spear, M., Mamun, F. A., Solano, J., Barnaby, H. J. & Esqueda, I. S., 2022, RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems. Institute of Electrical and Electronics Engineers Inc., (RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • MOSFET 100%
  • Enhancement 68%
  • SOI (semiconductors) 64%
  • Radiation 62%
  • Scattering 55%

• Single-Event Effects Induced by Heavy Ions in SONOS Charge Trapping Memory Arrays

  Xiao, T. P., Bennett, C. H., Agarwal, S., Hughart, D. R., Barnaby, H. J., Puchner, H., Talin, A. A. & Marinella, M. J., Mar 1 2022, In: IEEE Transactions on Nuclear Science. 69, 3, p. 406-413 8 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Charge trapping 100%
  • Silicon oxides 92%
  • Heavy ions 90%
  • Nitrides 76%
  • silicon oxides 67%
  3 Scopus citations

• Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

  Neuendank, J., Spear, M., Wallace, T., Wilson, D., Solano, J., Irumva, G., Esqueda, I. S., Barnaby, H. J., Clark, L. T., Brunhaver, J., Turowski, M., Mikkola, E., Hughart, D., Young, J., Manuel, J., Agarwal, S., Vaandrager, B., Vizkelethy, G., Gutierrez, A., Trippe, J., & 3 othersKing, M., Bielejec, E. & Marinella, M., 2022, 2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE Radiation Effects Data Workshop; vol. 2022-July).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  Open Access

  • single event upsets 100%
  • digital electronics 93%
  • FinFET 90%
  • Flip flop circuits 82%
  • Digital circuits 78%
  2 Scopus citations

• TCAD Calibrated SEE Fault Model Validated with Beam Results for a 12nm D Flip-Flop.

  Youngsciortino, C., Neuendank, J., Clark, L. T., Barnaby, H., Wilson, D., Spear, M., Privat, A. & Marinella, M. J., 2022, RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems. Institute of Electrical and Electronics Engineers Inc., (RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Computer-aided Design 100%
  • flip-flops 97%
  • computer aided design 88%
  • Flip flop circuits 87%
  • Fault 86%

• Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology

  Solano, J., Spear, M., Wallace, T., Wilson, D., Forman, O., Esqueda, I. S., Barnaby, H., Privat, A., Turowski, M. & Vonniederhausern, R., 2022, 2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE Radiation Effects Data Workshop; vol. 2022-July).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • CMOS 100%
  • Silicon 87%
  • insulators 82%
  • dosage 73%
  • Drain current 70%
• 2021

  Active neutron interrogation experiments and simulation verification using the SIngle-scintillator Neutron and Gamma-Ray spectrometer (SINGR) for geosciences

  Heffern, L. E., Hardgrove, C. J., Parsons, A., Johnson, E. B., Starr, R., Stoddard, G., Blakeley, R. E., Prettyman, T., Gabriel, T. S. J., Barnaby, H., Christian, J., Unzueta, M. A., Tate, C., Martin, A. & Moersch, J., Dec 21 2021, In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1020, 165883.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Gamma ray spectrometers 100%
  • gamma ray spectrometers 71%
  • Phosphors 71%
  • interrogation 62%
  • Neutrons 58%
  2 Scopus citations

• Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

  Muthuseenu, K., Barnaby, H. J., Galloway, K. F., Koziukov, A. E., Maksimenko, T. A., Vyrostkov, M. Y., Bu-Khasan, K. B., Kalashnikova, A. A. & Privat, A., May 2021, In: IEEE Transactions on Nuclear Science. 68, 5, p. 611-616 6 p., 9328811.

  Research output: Contribution to journal › Article › peer-review

  • Power MOSFET 100%
  • MOSFET devices 90%
  • metal oxide semiconductors 78%
  • Silicon 60%
  • field effect transistors 60%
  16 Scopus citations

• BJTs in Space: ELDRS Experiment on NASA Space Environment Testbed

  Benedetto, A. R., Barnaby, H. J., Cook, C., Campola, M. J. & Tender, A., 2021, 2021 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (2021 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2021 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • junction transistors 100%
  • aerospace environments 89%
  • Bipolar transistors 89%
  • bipolar transistors 78%
  • Testbeds 70%
  3 Scopus citations

• Editorial Conference Comments by the General Chair

  Barnaby, H. J., May 2021, In: IEEE Transactions on Nuclear Science. 68, 5, p. 489-491 3 p., 9434990.

  Research output: Contribution to journal › Editorial › peer-review

  Open Access
  1 Scopus citations

• Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies

  Privat, A., Barnaby, H. J., Spear, M., Esposito, M., Manuel, J. E., Clark, L., Brunhaver, J., Duvnjak, A., Jokai, R., Holbert, K. E., McLain, M. L., Marinella, M. J. & King, M. P., May 2021, In: IEEE Transactions on Nuclear Science. 68, 5, p. 671-676 6 p., 9374449.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • traveling ionospheric disturbances 100%
  • FinFET 80%
  • Analytical models 53%
  • leakage 51%
  • Radiation 49%
  4 Scopus citations

• Information in electrodeposited dendrites

  Kozicki, M. N., 2021, In: Advances in Physics: X. 6, 1, 1920846.

  Research output: Contribution to journal › Review article › peer-review

  Open Access

  • dendrites 100%
  • fractals 87%
  • entropy 46%
  • self assembly 33%
  • topology 27%
  4 Scopus citations

• Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose

  Esposito, M. G., Manuel, J. E., Privat, A., Xiao, T. P., Garland, D., Bielejec, E., Vizkelethy, G., Dickerson, J., Brunhaver, J., Talin, A. A., Ashby, D., King, M. P., Barnaby, H., McLain, M. & Marinella, M. J., May 2021, In: IEEE Transactions on Nuclear Science. 68, 5, p. 724-732 9 p., 9402890.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Heavy ions 100%
  • FinFET 89%
  • heavy ions 61%
  • damage 50%
  • dosage 46%
  9 Scopus citations

• Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators

  Xiao, T. P., Bennett, C. H., Agarwal, S., Hughart, D. R., Barnaby, H. J., Puchner, H., Prabhakar, V., Talin, A. A. & Marinella, M. J., May 2021, In: IEEE Transactions on Nuclear Science. 68, 5, p. 762-769 8 p., 9353047.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Silicon oxides 100%
  • Ionizing radiation 97%
  • Radiation effects 90%
  • Nitrides 83%
  • inference 77%
  2 Scopus citations

• Multiscale System Modeling of Single-Event-Induced Faults in Advanced Node Processors

  Cannon, M., Rodrigues, A., Black, D., Black, J., Bustamante, L., Breeding, M., Feinberg, B., Skoufis, M., Quinn, H., Clark, L. T., Brunhaver, J., Barnaby, H., McLain, M., Agarwal, S. & Marinella, M. J., May 2021, In: IEEE Transactions on Nuclear Science. 68, 5, p. 980-990 11 p., 9424210.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • central processing units 100%
  • Transistors 56%
  • Radiation hardening 53%
  • Flip flop circuits 38%
  • Networks (circuits) 36%
  3 Scopus citations

• Simplified Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

  Hjalmarson, H. P., Witczak, S. C., Roark, S. Z., Van Ginhoven, R., Buchheit, T., Barnaby, H. & Adell, P., 2021, RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems. Institute of Electrical and Electronics Engineers Inc., (RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Dosimetry 100%
  • Bipolar transistors 99%
  • radiation dose 97%
  • bipolar transistors 87%
  • Excitons 71%

• Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs

  Muthuseenu, K., Barnaby, H. J., Galloway, K. F., Koziukov, A. E., Maksimenko, T. A., Vyrostkov, M. Y., Bu-Khasan, K. B., Kalashnikova, A. A. & Privat, A., Aug 2021, In: IEEE Transactions on Electron Devices. 68, 8, p. 4004-4009 6 p., 9477631.

  Research output: Contribution to journal › Article › peer-review

  • Power MOSFET 100%
  • Field Effect 76%
  • Buffer Solution 50%
  • Electric potential 39%
  • Buffer layers 27%
  9 Scopus citations

• The viability of analog-based accelerators for neuromorphic computing: a survey

  Musisi-Nkambwe, M., Afshari, S., Barnaby, H., Kozicki, M. & Sanchez Esqueda, I., Sep 1 2021, In: Neuromorphic Computing and Engineering. 1, 1, 012001.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Particle accelerators 100%
  • Data storage equipment 60%
  • Neural networks 59%
  • Application 31%
  • Computer hardware 19%
  20 Scopus citations

• Total Ionizing Dose Effects on Multistate HfO-Based RRAM Synaptic Array

  Han, X., Privat, A., Holbert, K. E., Seo, J., Yu, S. & Barnaby, H. J., May 2021, In: IEEE Transactions on Nuclear Science. 68, 5, p. 756-761 6 p., 9399504.

  Research output: Contribution to journal › Article › peer-review

  • random access memory 100%
  • dosage 57%
  • Data storage equipment 52%
  • synapses 31%
  • Deep neural networks 20%
  6 Scopus citations
• 2020

  Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference

  Luo, Y., Han, X., Ye, Z., Barnaby, H., Seo, J. S. & Yu, S., Nov 2020, In: IEEE Transactions on Electron Devices. 67, 11, p. 4621-4625 5 p., 9174666.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Computer programming 100%
  • Deep neural networks 91%
  • Conductance 90%
  • Data storage equipment 57%
  • Application 29%
  22 Scopus citations

• Consistency Penalized Graph Matching for Image-Based Identification of Dendritic Patterns

  Chi, Z., Valehi, A., Peng, H., Kozicki, M. & Razi, A., 2020, In: IEEE Access. 8, p. 118623-118637 15 p., 9126787.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Communication 100%
  • Surface 34%
  • Application 34%
  • Cloning 29%
  • Image resolution 23%
  6 Scopus citations

• Ionizing radiation tolerance of stacked Si₃N₄-SiO₂ gate insulators for power MOSFETs

  Muthuseenu, K., Barnaby, H. J., Patadia, A., Holbert, K. & Privat, A., Jan 2020, In: Microelectronics Reliability. 104, 113554.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Ionizing radiation 100%
  • Power MOSFET 91%
  • Ionizing Radiation 86%
  • Nitrides 85%
  • radiation tolerance 83%
  10 Scopus citations

• Structure and charge transport of amorphous Cu-doped Ta2 O5: An ab initio study

  Thapa, R., Bhattarai, B., Kozicki, M. N., Subedi, K. N. & Drabold, D. A., Jun 2020, In: Physical Review Materials. 4, 6, 064603.

  Research output: Contribution to journal › Article › peer-review

  • Charge transfer 100%
  • Charge Transfer 54%
  • Amorphous Material 53%
  • Conductivity 51%
  • Plane Wave 51%
  8 Scopus citations

• Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation

  Privat, A., Barnaby, H. J., Tolleson, B. S., Muthuseenu, K. & Adell, P. C., Oct 2020, In: Microelectronics Reliability. 113, 113947.

  Research output: Contribution to journal › Article › peer-review

  • junction transistors 100%
  • Current voltage characteristics 96%
  • Bipolar transistors 89%
  • bipolar transistors 78%
  • Irradiation 74%
  1 Scopus citations

• Total Dose Effects on Negative and Positive Low-Dropout Linear Regulators

  Privat, A., Davis, P. W., Barnaby, H. J. & Adell, P. C., Jul 2020, In: IEEE Transactions on Nuclear Science. 67, 7, p. 1332-1338 7 p., 9018067.

  Research output: Contribution to journal › Article › peer-review

  • linear quadratic regulator 100%
  • dropouts 86%
  • regulators 76%
  • Voltage regulators 70%
  • Energy gap 67%
  5 Scopus citations
• 2019

  Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

  Ambrosi, E., Bartlett, P., Berg, A. I., Brivio, S., Burr, G., Deswal, S., Deuermeier, J., Haga, M. A., Kiazadeh, A., Kissling, G., Kozicki, M., Foroutan-Nejad, C., Gale, E., Gonzalez Velo, Y., Goossens, A., Goux, L., Hasegawa, T., Hilgenkamp, H., Huang, R., Ibrahim, S., & 18 othersIelmini, D., Kenyon, A. J., Kolosov, V., Li, Y., Majumdar, S., Milano, G., Prodromakis, T., Raeishosseini, N., Rana, V., Ricciardi, C., Santamaria, M., Shluger, A., Valov, I., Waser, R., Stanley Williams, R., Wouters, D., Yang, Y. & Zaffora, A., 2019, In: Faraday Discussions. 213, p. 115-120 6 p.

  Research output: Contribution to journal › Comment/debate › peer-review

  Open Access
  5 Scopus citations

• Evaluation of Radiation Effects in RRAM-Based Neuromorphic Computing System for Inference

  Ye, Z., Liu, R., Taggart, J., Barnaby, H. & Yu, S., Jan 2019, In: IEEE Transactions on Nuclear Science. 66, 1, p. 97-103 7 p., 8576612.

  Research output: Contribution to journal › Article › peer-review

  • Radiation effects 100%
  • random access memory 88%
  • inference 84%
  • radiation effects 84%
  • evaluation 48%
  14 Scopus citations

• Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations

  Livingston, I. P., Esqueda, I. S. & Barnaby, H. J., Oct 2019, In: Solid-State Electronics. 160, 107609.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Potential Equation 100%
  • Surface potential 72%
  • Surface Potential 58%
  • SOI (semiconductors) 46%
  • Interface Trap 44%
  2 Scopus citations

• Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

  Taggart, J. L., Jacobs-Gedrim, R. B., McLain, M. L., Barnaby, H., Bielejec, E. S., Hardy, W., Marinella, M. J., Kozicki, M. & Holbert, K., Jan 2019, In: IEEE Transactions on Nuclear Science. 66, 1, p. 69-76 8 p., 8542703.

  Research output: Contribution to journal › Article › peer-review

  • random access memory 100%
  • damage 61%
  • dosage 57%
  • thresholds 52%
  • Data storage equipment 52%
  2 Scopus citations

• Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability

  Gonzalez Velo, Y., Patadia, A., Barnaby, H. & Kozicki, M., 2019, In: Faraday Discussions. 213, p. 53-66 14 p.

  Research output: Contribution to journal › Article › peer-review

  • Crystallization 100%
  • chalcogenides 83%
  • Dose 63%
  • crystallization 63%
  • Radiation 62%
  1 Scopus citations

• Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

  Privat, A., Barnaby, H., Adell, P. C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R. & Buchheit, T. E., Jan 2019, In: IEEE Transactions on Nuclear Science. 66, 1, p. 190-198 9 p., 8579161.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • shelves 100%
  • Commercial off-the-shelf 94%
  • Bipolar integrated circuits 70%
  • platforms 69%
  • Radiation 64%
  9 Scopus citations

• Phase-change memories (PCM)-Experiments and modelling: General discussion

  Bartlett, P., Berg, A. I., Bernasconi, M., Brown, S., Burr, G., Foroutan-Nejad, C., Gale, E., Huang, R., Ielmini, D., Kissling, G., Kolosov, V., Kozicki, M., Nakamura, H., Rushchanskii, K., Salinga, M., Shluger, A., Thompson, D., Valov, I., Wang, W., Waser, R., & 1 othersWilliams, R. S., 2019, In: Faraday Discussions. 213, p. 393-420 28 p.

  Research output: Contribution to journal › Comment/debate › peer-review
  7 Scopus citations

• Photochemical synthesis of dendritic silver nano-particles for anti-counterfeiting

  Zhao, Z., Chamele, N., Kozicki, M., Yao, Y. & Wang, C., 2019, In: Journal of Materials Chemistry C. 7, 20, p. 6099-6104 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Silver 100%
  • Silver Nanoparticle 82%
  • Illumination 81%
  • Label 80%
  • Nucleation 75%
  22 Scopus citations

• Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

  Huang, X., Fang, R., Yang, C., Fu, K., Fu, H., Chen, H., Yang, T. H., Zhou, J., Montes, J., Kozicki, M., Barnaby, H., Zhang, B. & Zhao, Y., Mar 13 2019, In: Nanotechnology. 30, 21, 215201.

  Research output: Contribution to journal › Article › peer-review

  • Leakage Current 60%
  • Oxides 55%
  • High electron mobility transistors 53%
  • Field effect transistors 49%
  • Field Effect 45%
  12 Scopus citations

• Structural origins of electronic conduction in amorphous copper-doped alumina

  Subedi, K. N., Prasai, K., Kozicki, M. N. & Drabold, D. A., Jun 28 2019, In: Physical Review Materials. 3, 6, 065605.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Energy gap 100%
  • Alumina 86%
  • Aluminum oxide 84%
  • aluminum oxides 71%
  • Copper 71%
  17 Scopus citations

• Synaptic and neuromorphic functions: General discussion

  Berg, A. I., Brivio, S., Brown, S., Burr, G., Deswal, S., Deuermeier, J., Gale, E., Hwang, H., Ielmini, D., Indiveri, G., Kenyon, A. J., Kiazadeh, A., Köymen, I., Kozicki, M., Li, Y., Mannion, D., Prodromakis, T., Ricciardi, C., Siegel, S., Speckbacher, M., & 5 othersValov, I., Wang, W., Williams, R. S., Wouters, D. & Yang, Y., 2019, In: Faraday Discussions. 213, p. 553-578 26 p.

  Research output: Contribution to journal › Comment/debate › peer-review
  2 Scopus citations

• TCAD model for ag-gese₃-ni cbram devices

  Muthuseenu, K., Hylin, E. C., Barnaby, H. J., Apsangi, P., Kozicki, M. N., Schlenvogt, G. & Townsend, M., Sep 2019, Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. Driussi, F. (ed.). Institute of Electrical and Electronics Engineers Inc., 8870539. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; vol. 2019-September).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Computer-aided Design 100%
  • Computer aided design 62%
  • Random Access 52%
  • Filament 48%
  • Saturation 39%

• Temperature Response on NPN and PNP Bipolar Junction Transistors after Total Ionizing Dose Irradiation Exposure

  Privat, A., Barnaby, H. J., Tolleson, B. S., Muthuseenu, K. & Adell, P. C., 2019, 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019. Institute of Electrical and Electronics Engineers Inc., (2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • junction transistors 100%
  • Bipolar transistors 89%
  • bipolar transistors 78%
  • Irradiation 74%
  • Dose 55%
  1 Scopus citations

• The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles

  Li, X., Yang, J., Barnaby, H. J., Li, P., Sun, X., Dong, L., Galloway, K. F., Schrimpf, R. D. & Fleetwood, D. M., 2019, 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019. Institute of Electrical and Electronics Engineers Inc., (2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Charged particles 100%
  • Deep level transient spectroscopy 82%
  • Deep Level Transient Spectroscopy 78%
  • Ions 64%
  • charged particles 59%

• Training a Neural Network on Analog TaO_x ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim

  Jacobs-Gedrim, R. B., Hughart, D. R., Agarwal, S., Vizkelethy, G., Bielejec, E. S., Vaandrager, B. L., Swanson, S. E., Knisely, K. E., Taggart, J. L., Barnaby, H. & Marinella, M. J., Jan 2019, In: IEEE Transactions on Nuclear Science. 66, 1, p. 54-60 7 p., 8577027.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Heavy ions 100%
  • RRAM 98%
  • education 69%
  • heavy ions 61%
  • analogs 56%
  8 Scopus citations